Pages
- 1
- 2
- Area-Selective Spatial ALD of SiO2Interleaved with Etch-Back Supercycles: Quantification of Area Selectivity by Low Energy Ion Scattering
- On the role of individual etching components in selective atomic layer processing: Etch and deposit to afford high selectivity
- Area-selective deposition of SiO2 based on spatial ALD with interleaved etching steps to obtain high selectivity
- Area-selective deposition of SiO2 based on spatial ALD with interleaved etching steps to obtain selectivities > 10 nm
- Area-selective atmospheric-pressure spatial ALD of SiO2 using interleaved back-etch steps yielding selectivity > 10 nm
- Infrared and Optical Emission Spectroscopy on Atmospheric-Pressure Plasma-Enhanced Spatial ALD of Al2O3
- Infrared and Optical Emission Spectroscopy on Atmospheric-Pressure Plasma-Enhanced Spatial ALD of Al2O3
- Infrared and Optical Emission Spectroscopy on Atmospheric-Pressure Plasma-Enhanced Spatial ALD of Al2O3
Pages
- 1
- 2