- document
- Mameli, A. (author), Merkx, M. (author), Karasulu, B. (author), Roozeboom, F. (author), Kessels, W.M.M. (author), Mackus, A.J.M. (author) public lecture 2017
- document
- Illiberi, A. (author), Katsouras, I. (author), Gazibegovic, S. (author), Cobb, B. (author), Nekovic, E. (author), van Boekel, W. (author), Frijters, C. (author), Maas, J. (author), Roozeboom, F. (author), Creyghton, Y. (author), Poodt, P. (author), Gelinck, G. (author) public lecture 2017
- document
- Roozeboom, F. (author) public lecture 2017
- document
- Roozeboom, F. (author) public lecture 2017
- document
-
Zardetto, V. (author), Di Giacomo, F. (author), Lucarelli, G. (author), Kessels, W.M.M. (author), Brown, T.M. (author), Creatore, M. (author)In mesostructured perovskite solar cell devices, charge recombination processes at the interface between the transparent conductive oxide, perovskite and hole transport layer are suppressed by depositing an efficient compact TiO2 blocking layer. In this contribution we investigate the role of the atomic layer deposited TiO2 on ITO-PET substrates...article 2017
- document
- Creyghton, Y. (author), Illiberi, A. (author), Roozeboom, F. (author) public lecture 2017
- document
- Mameli, A. (author), Kuang, Y. (author), Aghaee, M. (author), Ande, C.K. (author), Karasulu, B. (author), Creatore, M. (author), Mackus, A.J.M. (author), Kessels, W.M.M. (author), Roozeboom, F. (author) article 2017
- document
-
Erkens, I.J.M. (author), Verheijen, M.A. (author), Knoops, H.C.M. (author), Keuning, W. (author), Roozeboom, F. (author), Kessels, W.M.M. (author)To date, conventional thermal atomic layer deposition (ALD) has been the method of choice to deposit high-quality Pt thin films grown typically from (MeCp)PtMe3 vapor and O2 gas at 300 °C. Plasma-assisted ALD of Pt using O2 plasma can offer several advantages over thermal ALD, such as faster nucleation and deposition at lower temperatures. In...article 2017
- document
-
Mione, M.A. (author), Katsouras, I. (author), Creyghton, Y. (author), van Boekel, W. (author), Maas, J. (author), Gelinck, G. (author), Roozeboom, F. (author), Illiberi, A. (author)High permittivity (high-k) materials have received considerable attention as alternatives to SiO2 for CMOS and low-power flexible electronics applications. In this study, we have grown high-quality ZrO2 by using atmospheric-pressure plasma-enhanced spatial ALD (PE-sALD), which, compared to temporal ALD, offers higher effective deposition rates...article 2017
- document
-
Mameli, A. (author), Merkx, M.J.M. (author), Karasulu, B. (author), Roozeboom, F. (author), Kessels, W.E.M.M. (author), MacKus, A.J.M. (author)Area-selective atomic layer deposition (ALD) is rapidly gaining interest because of its potential application in self-aligned fabrication schemes for next-generation nanoelectronics. Here, we introduce an approach for area-selective ALD that relies on the use of chemoselective inhibitor molecules in a three-step (ABC-type) ALD cycle. A process...article 2017
- document
-
Frijters, C.H. (author), Bolt, P.J. (author), Poodt, P.W.G. (author), Knaapen, R. (author), van den Brink, J. (author), Ruth, M. (author), Bremaud, D. (author), Illiberi, A. (author)In this manuscript we present the first successful application of a spatial atomic-layer-deposition process to thin film solar cells. Zn(O,S) has been grown by spatial atomic layer deposition (S-ALD) at atmospheric pressure and applied as buffer layer in rigid and flexible CIGS cells by a lab-scale (15x15 cm2) S-ALD set-up. We achieved values of...conference paper 2016
- document
-
Mameli, A. (author), van den Bruele, F. (author), Ande, C.K. (author), Verheijen, M.A. (author), Kessels, W.M.M. (author), Roozeboom, F. (author)In this work we studied the deposition of silver (Ag) by spatial-ALD on molybdenum layers serving as a growth model substrate. Mo-layers were selected for testing the suitability of spatial-ALD in fabricating MoO3/Ag/MoO3 tri-layer transparent conductor (TC) stacks used for light-management optimization in organic-based and perovskites solar...conference paper 2016
- document
-
Mameli, A. (author), Aghaee, M. (author), Kuang, Y. (author), Creatore, M. (author), Kessels, W.M.M. (author), Roozeboom, F. (author)We demonstrate direct-write[1]ALD of In2O3:H patterns with good selectivity on large area substrates. The nucleation delay on H-terminated surfaces is exploited to achieve area selective deposition w/o any subtractive step (e.g. etching, SAMs, litho, lift-off). Selectivity is achieved by tailoring the surface groups using a μ-plasma printer with...public lecture 2016
- document
- conference paper 2016
- document
- Frijters, C. (author), Bolt, P.J. (author), Poodt, P. (author), Roozeboom, F. (author), Illiberi, A. (author) public lecture 2016
- document
-
Creyghton, Y. (author), Illiberi, A. (author), Mione, M. (author), van Boekel, W. (author), Debernardi, N. (author), Seitz, M. (author), van den Bruele, F. (author), Poodt, P. (author), Roozeboom, F. (author)Non-thermal plasma sources are known to lower the operation temperatures and widen the process windows in thermal ALD of thin-film materials. In spatial ALD, novel plasma sources with exceptional dimensional and chemical stability are required to provide the flow geometries optimized for efficient transport and use of radicals (O, N, H, OH, NH,...conference paper 2016
- document
-
Wu, Y. (author), Macco, B. (author), Vanhemel, D. (author), Koelling, S. (author), Verheijen, M.A. (author), Koenraad, P.M. (author), Kessels, W.M.M. (author), Roozeboom, F. (author)Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas–solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and...article 2016
- document
-
Creyghton, Y. (author), Illiberi, A. (author), Mione, M. (author), van Boekel, W. (author), Debernardi, N. (author), Seitz, M. (author), van den Bruele, F. (author), Poodt, P. (author), Roozeboom, F. (author)Atomic layer deposition by means of spatial separation of reactive gases is emerging as an industrial manufacturing technology. Integration of non-thermal plasma in spatial ALD machines will further expand the process window towards lower operation temperatures and specific materials requiring radicals (O, N, H, OH, NH etc.). Plasma sources with...conference paper 2016
- document
-
Williams, B.L. (author), Zardetto, V. (author), Kniknie, B. (author), Verheijen, M.A. (author), Kessels, W.M.M. (author), Creatore, M. (author)The electrical role of the highly resistive and transparent (HRT) i-ZnO layer in Cu(In, Ga)Se2(CIGS) solar cells is investigated. By tuning the resistivity of atomic layer deposited (ALD) i-ZnO through the use of post-growth O2-plasma treatments, it is shown that low i-ZnO carrier densities (i.e. high resistivities) actually restrict the...article 2016
- document
- Roozeboom, F. (author) public lecture 2016