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Mameli, A. (author), Fawzy, A. (author), Roozeboom, F. (author), Poodt, P.W.G. (author)The present disclosure concerns an atomie layer deposition device for area-selective deposition of a target material layer onto a deposition area of a substrate surface further comprising a non-deposition area. In use the substrate is conveyed along a plurality of deposition and separator spaces including at least two gas separator spaces...patent 2023
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Jain, H. (author), Creatore, M. (author), Poodt, P. (author)Infiltration of trimethylaluminum (TMA) in molecular layer deposition-enabled alucone thin films on planar substrates is a common observation reported in the literature. An insufficient TMA purge time in such cases is often found to lead to a CVD component in the overall film growth due to the reactions between the outgassing TMA and the co...article 2023
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Shen, J. (author), Roozeboom, F. (author), Mameli, A. (author)Atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-spatial-ALD) of SiNx is demonstrated for the first time. Using bis(diethylamino)silane (BDEAS) and N2 plasma from a dielectric barrier discharge source, a process was developed at low deposition temperatures (≤ 250 °C). The effect of N2 plasma exposure time and overall...article 2023
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Karasulu, (author), Mameli, A. (author), Roozeboom, F. (author)A first-of-its-kind area-selective deposition process for SiO2 is developed consisting of film deposition with interleaved exposures to small molecule inhibitors (SMIs) and back-etch correction steps, within the same spatial atomic layer deposition (ALD) tool. The synergy of these aspects results in selective SiO2 deposition up to ˜23 nm with...article 2023
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Mameli, A. (author), Kronemeijer, A.J. (author), Roozeboom, F. (author)The present disclosure relates to a method of manufacturing a thin film device. A multilevel nanoimprint lithography template is transferred into a thin film stack comprising an electrode layer and a blanket sacrificial layer covering the electrode layer. The template is transferred, thereby patterning the device and exposing a predefined...patent 2023
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Mameli, A. (author), Teplyakov, A.V. (author)Conspectus Atomically precise and highly selective surface reactions are required for advancing microelectronics fabrication. Advanced atomic processing approaches make use of small molecule inhibitors (SMI) to enable selectivity between growth and nongrowth surfaces. The selectivity between growth and nongrowth substrates is eventually lost for...article 2023
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Jain, H. (author), Creatore, M. (author), Poodt, P. (author)Trimethylaluminum is the most used aluminum precursor in atomic and molecular layer deposition (ALD/MLD). It provides high growth-per-cycle (GPC), is highly reactive and is relatively low cost. However, in the deposition of hybrid alucone films, TMA tends to infiltrate into the films requiring very long purge steps and thereby limiting the...article 2022
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- Mameli, A. (author), Roozeboom, F. (author) public lecture 2021
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- van den Bruele, F.J. (author), Grob, F. (author), Creyghton, Y.L.M. (author), Shen, J. (author), Bolt, P. (author), Poodt, P.W.G. (author) public lecture 2021
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Roozeboom, F. (author)The IRDS 2017 Roadmap catches the scaling challenges faced by the semiconductor industry in the upcoming decades by the overall term "3D Power Scaling". In the past scaling era superior material properties and critical dimensions nearing single-digit nanometer values could still be realized by cost-effective technology solutions. As we approach...public lecture 2021
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- Mameli, A. (author), Karasulu, B. (author), Roozeboom, F. (author) public lecture 2021
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Mameli, A. (author), Fawzy, A. (author), Roozeboom, F. (author), Poodt, P.W.G. (author)The present disclosure concerns an atomic layer deposition device for area-selective deposition of a target material layer onto a deposition area of a substrate surface further comprising a non-deposition area. In use the substrate is conveyed along a plurality of deposition and separator spaces including at least two gas separator spaces...patent 2021
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Mione, M.A. (author), Vandalon, V. (author), Mameli, A. (author), Kessels, W.M.M. (author), Roozeboom, F. (author)An atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-s-ALD) process for SiO2 using bisdiethylaminosilane (BDEAS, SiH2[NEt2]2) and O2 plasma is reported along with an investigation of its underlying growth mechanism. Within the temperature range of 100−250 °C, the process demonstrates self-limiting growth with a growth per...article 2021
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- Mameli, A. (author), Brüner, P. (author), Roozeboom, F. (author), Grehl, T. (author), Poodt, P. (author) public lecture 2020
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- Ameen, M. (author), Beeker, I. (author), Haverkate, L. (author), Anothumakkool, B. (author), Grob, B. (author), Hermes, D. (author), Huijssen, N. (author), Khandan Del, S. (author), Roozeboom, F. (author), Unnikrishnan, S. (author) public lecture 2020
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- Mameli, A. (author), Roozeboom, F. (author), Poodt, P. (author) public lecture 2019
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- Ameen, M. (author), Poplawski, M. (author), Haverkate, L. (author), Grob, F. (author), Anothumakkool, B. (author), Hermes, D. (author), del Khandan, S. (author), Roozeboom, F. (author), Unnikrishnan, S. (author) public lecture 2019
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- Mameli, A. (author), Verheijen, M.A. (author), Mackus, A.J.M. (author), Kessels, W.M.M. (author), Roozeboom, F. (author) public lecture 2019
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Aarik, J. (author), Roozeboom, F. (author)The virtual project on the history of ALP (VPHA) is a worldwide collaborative Open Science initiative started in summer 2013, set up to clarify the early days of Atomic Layer Deposition (ALD), especially related to its two independent discoveries. in this VPHA, early ALD publications are overviewed up to 1986 in an atmosphere of Openness,...public lecture 2019
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Mameli, A. (author), Roozeboom, F. (author), Poodt, P. (author)Area-selective atomic layer deposition (AS-ALD) has the potential for pushing device manufacturing towards new frontiers. However, the selectivity that can be obtained is often very limited and the throughput of most AS-ALD methods is low, which hampers its industrial acceptance.[1,2] In this work, we present a process for AS-ALD of SiO2 using...public lecture 2019