Semiconductors, Dielectrics, and Metals for Nanoelectronics and Plasma Nanosciences

Semiconductor Wafer Bonding: Science, Technology, and Applications 16

Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 8

Traditionally, the topics of this annual symposium focus upon the continuous scaling in CMOS integrated circuit manufacturing (More Moore and Beyond Moore for short) combined with the opportunities from growing diversification including sensors and embedded functionality (More than Moore). Thus, the main objective is to exchange recent advances...

Atomic Layer Deposition Applications 13

Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6

The topics of this annual symposium continue to describe the evolution of traditional scaling in CMOS integrated circuit manufacturing (More Moore for short), combined with the opportunities from growing diversification and embedded functionality (More than Moore). Once again, the main objective was to address the latest advances in channel,...

Atomic Layer Deposition Applications 11: Preface

Processing Materials of 3D Interconnects, Damascene and Electronics Packaging 7: Preface

Atomic Layer Deposition Applications 10: Preface

Atomic Layer Deposition Applications 9: Preface

A new concept for spatially-divided Reactive Ion Etching with ALD-based passivation

Low temperature fusion wafer bonding quality investigation for failure mode analysis

In this paper, a brief summary of potential defect formation and failure characteristics for low temperature plasma-assisted Si wafer bonding in correlation to different influencing factors is given. In terms of a failure catalogue classification, these defects are related to incoming material quality variation, wafer bonding equipment and...

Atomic Layer Deposition Applications 8: Preface

Concept of Spatially-Divided Deep Reactive Ion Etching of Si using Oxide Atomic Layer Deposition in the Passivation Cycle

Conventional Deep Reactive Ion Etching (DRIE) is a plasma etch process with alternating half-cycles of 1) Si-etching with SF6 to form gaseous SiFx etch products, and 2) passivation with C4F8 that polymerizes as a protecting fluorocarbon deposit on the sidewalls and bottom of the etched features. In this work we report on a novel alternative and...

Atomic Layer Deposition Applications 7: Preface

Atomic Layer Deposition Applications 6: Preface

Processing, Materials, and Integration of Damascene and 3D Interconnects: Preface