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Vallés-Sanclemente, S. (author), van der Meer, S.L.M. (author), Finkel, M. (author), Muthusubramanian, N. (author), Beekman, M. (author), Ali, H. (author), Marques, J.F. (author), Zachariadis, C. (author), Veen, H.M. (author), Stavenga, T. (author), Haider, N. (author), DiCarlo, L. (author)
We present the use of a set of airbridges to trim the frequency of microwave coplanar-waveguide (CPW) resonators post-fabrication. This method is compatible with the fabrication steps of conventional CPW airbridges and crossovers and increases device yield by allowing compensation of design and fabrication uncertainty with 100 MHz range and 10...
article 2023
document
Poortmans, J. (author), Verlinden, P. (author), Dubois, S. (author), Weeber, A. (author), Ballif, C. (author), Glunz, S. (author), Poortmans, J. (author), Brendel, R. (author), Hahn, G. (author)
[No abstract available]
article 2019
document
Volker, A.W.F. (author)
There are many applications where access is limited to the location where the inspection is needed. One very important application is pipe support corrosion. TNO worked on guided wave tomography for mapping wall loss under pipe supports. Due to the nature of this type of corrosion, pitting may occur. The detection and sizing of these small pits...
conference paper 2019
document
Zhu, Y. (author), Rougieux, F. (author), Grant, N. (author), Mullins, J. (author), de Guzman, J.A. (author), Murphy, J.D. (author), Markevich, V.P. (author), Coletti, G. (author), Peaker, A.R. (author), Hameiri, Z. (author)
Float-zone silicon has been long assumed to be bulk defect free and stable. Nevertheless, recently it was found that upon annealing between 450 °C to 700 °C detrimental defects can be activated in this material. Previous studies via deep level transient spectroscopy have identified several defect levels. However, it is still not clear which of...
conference paper 2019
document
Lu, X. (author), Koppes, M. (author), Bronsveld, P.C.P. (author)
For the fabrication of silicon heterojunction (SHJ) solar cells, hydrogenated amorphous silicon (a-Si:H) layers are deposited on each side of textured c-Si wafers. The high conversion efficiency of these cells relies significantly on the excellent surface passivation provided by these layers. A perfectly clean surface, free from organic and...
conference paper 2018
document
Volker, A.W.F. (author)
Guided wave tomography is an advanced technology for quantitative wall thickness mapping to image wall loss due to corrosion or erosion. An inversion approach is used to match the measured phase (time) at a specific frequency to a model. The accuracy of the model determines the sizing accuracy. Particularly for seam welded pipes there is a...
conference paper 2018
document
Sommeling, P. (author), Kroon, J. (author), Guillevin, N. (author), Okel, L. (author), Olson, C. (author)
The production of silicon feedstock and wafers is energy intensive and the costs of the wafers are a significant part of the total module costs. The application of thinner wafers and cells is a way to an improved environmental profile (lower CO2 footprint and energy payback time) and save Si material costs. We present here the results of a...
conference paper 2018
document
Lamers, M. (author), Bronsveld, P. (author), Liu, J. (author), Weeber, A. (author)
High quality passivating contacts can be realized by using the combination of a thin interfacial oxide (SiOx) and doped polysilicon (polySi). Recombination losses are minimized by providing very good passivation between the thin hydrogenated oxide and the cSi, a high field effect by the highly doped polySi [1-2], combined with the low level...
conference paper 2018
document
Duijster, A.J. (author), van Groenestijn, G.J. (author), van Neer, P.L.M.J. (author), Blacquière, G. (author), Volker, A.W.F. (author)
The use of phased arrays is growing in the non-destructive testing industry and the trend is towards large 2D arrays, but due to limitations, it is currently not possible to record the signals from all elements, resulting in aliased data. In the past, we have presented a data interpolation scheme 'beyond spatial aliasing' to overcome this...
conference paper 2018
document
Mewe, A. (author), Stodolny, M. (author), Anker, J. (author), Lenes, M. (author), Pagès, X. (author), Wu, Y. (author), Tool, K. (author), Geerligs, B. (author), Romijn, I. (author)
We investigate the application of polysilicon carrier-selective passivating contacts to IBC cells. We optimized the passivation of n-type and p-type polysilicon layers by managing the hydrogen supply to the interfacial oxide. Both surface passivation and firing stability were addressed. The best results so far are obtained for passivation...
conference paper 2018
document
Theelen, M. (author), Liakopoulou, A. (author), Hans, V. (author), Daume, F. (author), Steijvers, H. (author), Barreau, N. (author), Vroon, Z. (author), Zeman, M. (author)
Two types of Cu(In,Ga)Se2 (CIGS) solar cells, both designed for implementation in CIGS modules, were subjected to temperatures between 25C and 105C. Simultaneous exposure to AM1.5 illumination allowed the measurement of their electrical parameters at these temperatures. These two types of solar cells, produced with different deposition routes on...
article 2017
document
Erkens, I.J.M. (author), Verheijen, M.A. (author), Knoops, H.C.M. (author), Keuning, W. (author), Roozeboom, F. (author), Kessels, W.M.M. (author)
To date, conventional thermal atomic layer deposition (ALD) has been the method of choice to deposit high-quality Pt thin films grown typically from (MeCp)PtMe3 vapor and O2 gas at 300 °C. Plasma-assisted ALD of Pt using O2 plasma can offer several advantages over thermal ALD, such as faster nucleation and deposition at lower temperatures. In...
article 2017
document
Jin, J.W. (author), Nathan, A. (author), Barquinha, P. (author), Pereira, L. (author), Fortunato, E. (author), Martins, R. (author), Cobb, B. (author)
Oxide semiconductor thin-film transistors can show anomalous behavior under bias stress. Two types of anomalies are discussed in this paper. The first is the shift in threshold voltage (VTH) in a direction opposite to the applied bias stress, and highly dependent on gate dielectric material. We attribute this to charge trapping/detrapping and...
article 2016
document
Jamari, J. (author), Ismail, R. (author), Anwar, I.B. (author), Saputra, E. (author), Tauviqirrahman, M. (author), van der Heide, E. (author)
Tribological properties of materials used in biomedical implants will critically affect the performance of the implant. Ultra-high molecular weight polyethylene (UHMWPE) material is popular due to its great properties. Surface texturing is one of the methods to minimize friction and wear. In this study, the effect of surface texturing on the...
conference paper 2016
document
Saputra, E. (author), Anwar, I.B. (author), Ismail, R. (author), Jamari, J. (author), van der Heide, E. (author)
This workstudies the impingement on the rim of acetabular liner due to wear on the surface of acetabular liner using finite element simulation. A three dimensional contact model between a femoral head and an acetabular liner was developed. There are three steps in this simulation, i.e. creating the virtualwear on the surface of acetabular liner,...
conference paper 2016
document
Anwar, I.B. (author), Saputra, E. (author), Ismail, R. (author), Jamari, J. (author), van der Heide, E. (author)
Fixation of acetabular cup to bone material is an important initial stability for artificial hip joint. In general, the fixation in cement less-type acetabular cup uses press-fit and screw methods. These methods can be applied alone or together. Based on literature survey, the additional screw inside of cup is effective; however, it has little...
conference paper 2016
document
Saputra, E. (author), Anwar, I.B. (author), Ismail, R. (author), Jamari, J. (author), van der Heide, E. (author)
Wear in the hip prosthesis due to sliding contact as a product of human activity is a phenomenon which cannot be avoided. In general, there are two modelof hip prostheses which are widely used in total hip replacement, i.e. unipolar and bipolar models. Wear in the bipolar model is more complex than the unipolar model due to its contact motion....
conference paper 2016
document
Lee, J. (author), Roelofs, W.S.C. (author), Janssen, R.A.J. (author), Gelinck, G.H. (author)
The spatial charge distribution in diketopyrrolopyrrole-containing ambipolar polymeric semiconductors embedded in dual-gate field-effect transistors (DGFETs) was investigated. The DGFETs have identical active channel layers but two different channel/gate interfaces, with a CYTOP™ organic dielectric layer for the top-gate and an...
article 2016
document
Lenz, T. (author), Sharifi Dehsari, H. (author), Asadi, K. (author), Blom, P.W.M. (author), Groen, W.A. (author), de Leeuw, D.M. (author)
We demonstrate that ferroelectric memory diodes can be utilized as switching type positive temperature coefficient (PTC) thermistors. The diode consists of a phase separated blend of a ferroelectric and a semiconducting polymer stacked between two electrodes. The current through the semiconducting polymer depends on the ferroelectric...
article 2016
document
Zhao, D. (author), Katsouras, I. (author), Asadi, K. (author), Groen, W.A. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
A homogeneous ferroelectric single crystal exhibits only two remanent polarization states that are stable over time, whereas intermediate, or unsaturated, polarization states are thermodynamically instable. Commonly used ferroelectric materials however, are inhomogeneous polycrystalline thin films or ceramics. To investigate the stability of...
article 2016
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