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Sadeghian Marnani, H. (author), Dekker, A. (author), Herfst, R.W. (author), Winters, J. (author), Eigenraam, A.B.C. (author), Rijnbeek, R.A. (author), Nulkes, N. (author)With the device dimensions moving towards the 1X node and below, the semiconductor industry is rapidly approaching the point where existing metrology, inspection and review tools face huge challenges in terms of resolution, the ability to resolve 3D and the throughput. Due to the advantages of sub-nanometer resolution and the ability of true 3D...conference paper 2015
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Sadeghian Marnani, H. (author), van den Dool, T.C. (author), Uziel, Y. (author), Bar Or, R. (author)This paper aims at unraveling the mystery of damage in high speed AFMs for 1X node and below. With the device dimensions moving towards the 1X node and below, the semiconductor industry is rapidly approaching the point where existing metrology, inspection and review tools face huge challenges in terms of resolution, the ability to resolve 3D,...conference paper 2015
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Keyvani Janbahan, A. (author), Sadeghian Marnani, H. (author), Goosen, H. (author), van Keulen, F. (author)The maximum amount of repulsive force applied to the surface plays a very important role in damage of tip or sample in Atomic Force Microscopy(AFM). So far, many investigations have focused on peak repulsive forces in tapping mode AFM in steady state conditions. However, it is known that AFM could be more damaging in transient conditions. In...conference paper 2015
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Sadeghian Marnani, H. (author), Herfst, R.W. (author), van den Dool, T.C. (author), Crowcombe, W.E. (author), Winters, J. (author), Kramers, G.F.I.J. (author)Scanning probe microscopy (SPM) is a promising candidate for accurate assessment of metrology and defects on wafers and masks, however it has traditionally been too slow for high-throughput applications, although recent developments have significantly pushed the speed of SPM [1,2]. In this paper we present new results obtained with our...conference paper 2014
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Sadeghian Marnani, H. (author), van den Dool, T.C. (author), Crowcombe, W.E. (author), Herfstra, R.W. (author), Winters, J. (author), Kramers, G.F.I.J. (author), Koster, N.B. (author)With the device dimensions moving towards the 1X node, the semiconductor industry is rapidly approaching the point where 10 nm defects become critical. Therefore, new methods for improving the yield are emerging, including inspection and review methods with sufficient resolution and throughput. Existing industrial tools cannot anymore fulfill...conference paper 2014