- document
-
Wei, X. (author), Urbach, H.P. (author), van der Walle, P. (author), Coene, W.M.J. (author)We present a parameter retrieval method which incorporates prior knowledge about the object into ptychography. The proposed method is applied to two applications: (1) parameter retrieval of small particles from Fourier ptychographic dark field measurements; (2) parameter retrieval of a rectangular structure with realspace ptychography. The...article 2021
- document
-
van der Walle, P. (author), Stortelder, J.K. (author), Wu, C.C. (author), Lensen, H.A. (author), Koster, N.B. (author)The EUV BeamLine 2 (EBL2) is being used to expose samples to EUV radiation for optics and mask lifetime testing. Before and after exposure the samples can be analyzed in-situ by X-ray photoelectron spectroscopy (XPS). During exposure the samples can be monitored in real-time by an imaging ellipsometer. We report on the development of two...conference paper 2020
- document
-
van der Walle, P. (author), Kramer, E. (author), Ebeling, R.P. (author), Spruit, W.E.T. (author), Alkemade, P. (author), Pereira, S. (author), van der Donck, J.C.J. (author), Maas, D.J. (author)We report on advanced defect classification using TNO's RapidNano particle scanner. RapidNano was originally designed for defect detection on blank substrates. In detection-mode, the RapidNano signal from nine azimuth angles is added for sensitivity. In review-mode signals from individual angles are analyzed to derive additional defect...conference paper 2018
- document
-
Koster, N.B. (author), te Sligte, E. (author), Molkenboer, F.T. (author), Deutz, A.F. (author), van der Walle, P. (author), Muilwijk, P.M. (author), Mulckhuyse, W.F.W. (author), Oostdijck, B.W. (author), Hollemans, C.L. (author), Nijland, B.A.H. (author), Kerkhof, P.J. (author), van Putten, M. (author), Westerhout, J. (author)TNO is building EBL2 as a publicly accessible test facility for EUV lithography related development of photomasks, pellicles, optics, and other components requiring EUV exposure. EBL2 consists of a EUV Beam Line, a XPS system, and sample handling infrastructure. Recently we finished installation of the source, exposure chamber, handlers and XPS...conference paper 2017
- document
-
Koster, N.B. (author), te Sligte, E. (author), Deutz, A.F. (author), Molkenboer, F.T. (author), Muilwijk, P.M. (author), van der Walle, P. (author), Mulckhuyse, W.F.W. (author), Nijland, B.A.H. (author), Kerkhof, P.J. (author), van Putten, M. (author)Recently TNO has established EBL2; an exposure and analysis facility for testing EUV optics, reticles and pellicles under relevant EUV scanner and source conditions. The facility and EUV source complies with the ASML power roadmap of EUV systems up to a power of 500 W IF. This enables life time testing of EUV optics, reticles and pellicles under...conference paper 2017
- document
-
van der Walle, P. (author), Kramer, E. (author), van der Donck, J.C.J. (author), Mulckhuyse, W.F.W. (author), Nijsten, L. (author), Bernal Arango, F.A. (author), de Jong, A. (author), van Zeijl, E. (author), Spruit, W.E.T. (author), van den Berg, J.H. (author), Nanda, G. (author), van Langen-Suurling, A.K. (author), Alkemade, P.F.A. (author), Pereira, S.F. (author), Maas, D.J. (author)Particle defects are important contributors to yield loss in semi-conductor manufacturing. Particles need to be detected and characterized in order to determine and eliminate their root cause. We have conceived a process flow for advanced defect classification (ADC) that distinguishes three consecutive steps; detection, review and classification...conference paper 2017
- document
-
te Sligte, E. (author), van Putten, M. (author), Molkenboer, F.T. (author), van der Walle, P. (author), Muilwijk, P.M. (author), Koster, N.B. (author), Westerhout, J. (author), Kerkhof, P.J. (author), Oostdijck, B.W. (author), Mulckhuyse, W.F.W. (author), Deutz, A.F. (author)TNO has built EBL2; a facility for EUV exposure testing and surface analysis. EBL2 is capable of testing EUV optics, EUV photomasks, pellicles, and other components under controlled conditions, relevant to EUV scanner and source operation at all foreseen source power nodes. The system consists of an EUV beam line coupled to an X-ray...conference paper 2017
- document
-
Bussink, P.G.W. (author), Volatier, J.B. (author), van der Walle, P. (author), Fritz, E.C. (author), van der Donck, J.C.J. (author)The Rapid Nano is a particle inspection system developed by TNO for the qualification of EUV reticle handling equipment. The detection principle of this system is dark-field microscopy. The performance of the system has been improved via model-based design. Through our model of the scattering process we identified two key components to improving...conference paper 2016
- document
-
van der Donck, J.C.J. (author), Bussink, P.G.W. (author), Fritz, E.C. (author), van der Walle, P. (author)Cleanliness is a prerequisite for obtaining economically feasible yield levels in the semiconductor industry. For the next generation of lithographic equipment, EUV lithography, the size of yield-loss inducing particles for the masks will be smaller than 20 nm. Consequently, equipment for handling EUV masks should not add particles larger than...article 2016
- document
-
te Sligte, E. (author), Koster, N.B. (author), Molkenboer, F.T. (author), van der Walle, P. (author), Muilwijk, P.M. (author), Mulckhuyse, W.F.W. (author), Oostdijck, B.W. (author), Hollemans, C.L. (author), Nijland, B.A.H. (author), Kerkhof, P.J. (author), van Putten, M. (author), Hoogstrate, A.M. (author), Deutz, A.F. (author)TNO is building EBL2: a laboratory EUV exposure system capable of operating at high broad band EUV powers and intensities, in which XPS analysis of exposed samples is possible without breaking vacuum. Its goal is to accelerate the development and testing of EUV optics and components by providing a publicly accessible exposure and analysis...conference paper 2016
- document
-
Bouwens, M.A.J. (author), Maas, D.J. (author), van der Donck, J.C.J. (author), Alkemade, P.F.A. (author), van der Walle, P. (author)To qualify tools of semiconductor manufacturing, particles unintentionally deposited in these tools are characterized using blank wafers. With fast optical inspection tools one can quickly localize these particle defects. An example is TNO's Rapid Nano, which operates in optical dark field. The next step is defect review for further defect...article 2016
- document
-
Roy, S. (author), Bouwens, M.A.J. (author), Wei, L. (author), Pereira, S.F. (author), Urbach, H.P. (author), van der Walle, P. (author)Optical detection of scatterers on a flat substrate, generally done using dark field microscopy technique, is challenging since it requires high power illumination to obtain sufficient SNR (Signal to Noise Ratio) to be able to detect sub-wavelength particles. We developed a bright field technique, based on Fourier scatterometry, with special...article 2015
- document
- te Sligte, E. (author), Koster, N.B. (author), van der Walle, P. (author), Deutz, A.F. (author) public lecture 2015
- document
- van der Walle, P. (author), Hannemann, S. (author), van Eijk, D. (author), Mulckhuyse, W.F.W. (author), van der Donck, J.C.J. (author) public lecture 2014
- document
-
van der Walle, P. (author), Hannemann, S. (author), van Eijk, D. (author), Mulckhuyse, W.F.W. (author), van der Donck, J.C.J. (author)The background in simple dark field particle inspection shows a high scatter variance which cannot be distinguished from signals by small particles. According to our models, illumination from different azimuths can reduce the background variance. A multi-azimuth illumination has been successfully integrated on the Rapid Nano particle scanner....conference paper 2014
- document
-
van der Walle, P. (author), Kumar, P. (author), Ityaksov, D. (author), Versluis, R. (author), Maas, D.J. (author), Kievit, O. (author), Janssen, O. (author), van der Donck, J.C.J. (author)In dark-field particle inspection, the limiting factor for sensitivity is the amount of background scatter due to substrate roughness. This scatter forms a speckle pattern and shows an intensity distribution with a long tail. To reduce false-positives to an acceptable level, a high detection threshold should be chosen such that the tail of the...conference paper 2013
- document
-
van der Walle, P. (author), Kumar, P. (author), Ityaksov, D. (author), Versluis, R. (author), Maas, D.J. (author), Kievit, O. (author), Janssen, J. (author), van der Donck, J.C.J. (author)TNO has developed the Rapid Nano scanner to detect nanoparticles on EUVL mask blanks. This scanner was designed to be used in particle qualifications of EUV reticle handling equipment. In this paper we present an end-to-end model of the Rapid Nano detection process. All important design parameters concerning illumination, detection and noise are...conference paper 2012
- document
-
Stortelder, J.K. (author), van der Donck, J.C.J. (author), Oostrom, S. (author), van der Walle, P. (author), Brux, O. (author), Dress, P. (author)Before new equipment for handling of EUV reticles can be used, it should be shown that the apparatus is qualified for operating at a sufficiently clean level. TNO developed a qualification procedure that is separated into two parts: reticle handling and transport qualification and the qualification of the equipment. A statistical method was...conference paper 2011
- document
-
Brux, O. (author), van der Walle, P. (author), van der Donck, J.C.J. (author), Dress, P. (author)Extreme Ultraviolet Lithography (EUVL) is the most promising solution for technology nodes 16nm (hp) and below. However, several unique EUV mask challenges must be resolved for a successful launch of the technology into the market. Uncontrolled introduction of particles and/or contamination into the EUV scanner significantly increases the risk...conference paper 2011
- document
-
van der Donck, J.C.J. (author), Snel, R. (author), Stortelder, J. (author), Abutan, A. (author), Oostrom, S. (author), van Reek, S. (author), van der Zwan, B. (author), van der Walle, P. (author)Since 2006 EUV Lithographic tools have been available for testing purposes giving a boost to the development of fab infrastructure for EUV masks. The absence of a pellicle makes the EUV reticles extremely vulnerable to particles. Therefore, the fab infrastructure for masks must meet very strict particle requirements. It is expected that all new...conference paper 2011