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van Es, M.H. (author), Tamer, S. (author), Bloem, E. (author), Fillinger, L. (author), van Zeijl, E. (author), Maturová, K. (author), van der Donck, J.C.J. (author), Willekers, R.W. (author), Chuang, C.B. (author), Maas, D.J. (author)Patterning photoresist with extreme control over dose and placement is the first crucial step in semiconductor manufacturing. However, how can the activation of modern complex resist components be accurately measured at sufficient spatial resolution? No exposed nanometre-scale resist pattern is sufficiently sturdy to unalteredly withstand...article 2023
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van der Walle, P. (author), Kramer, E. (author), Ebeling, R.P. (author), Spruit, W.E.T. (author), Alkemade, P. (author), Pereira, S. (author), van der Donck, J.C.J. (author), Maas, D.J. (author)We report on advanced defect classification using TNO's RapidNano particle scanner. RapidNano was originally designed for defect detection on blank substrates. In detection-mode, the RapidNano signal from nine azimuth angles is added for sensitivity. In review-mode signals from individual angles are analyzed to derive additional defect...conference paper 2018
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van der Walle, P. (author), Kramer, E. (author), van der Donck, J.C.J. (author), Mulckhuyse, W.F.W. (author), Nijsten, L. (author), Bernal Arango, F.A. (author), de Jong, A. (author), van Zeijl, E. (author), Spruit, W.E.T. (author), van den Berg, J.H. (author), Nanda, G. (author), van Langen-Suurling, A.K. (author), Alkemade, P.F.A. (author), Pereira, S.F. (author), Maas, D.J. (author)Particle defects are important contributors to yield loss in semi-conductor manufacturing. Particles need to be detected and characterized in order to determine and eliminate their root cause. We have conceived a process flow for advanced defect classification (ADC) that distinguishes three consecutive steps; detection, review and classification...conference paper 2017
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Bussink, P.G.W. (author), Volatier, J.B. (author), van der Walle, P. (author), Fritz, E.C. (author), van der Donck, J.C.J. (author)The Rapid Nano is a particle inspection system developed by TNO for the qualification of EUV reticle handling equipment. The detection principle of this system is dark-field microscopy. The performance of the system has been improved via model-based design. Through our model of the scattering process we identified two key components to improving...conference paper 2016
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van der Donck, J.C.J. (author), Bussink, P.G.W. (author), Fritz, E.C. (author), van der Walle, P. (author)Cleanliness is a prerequisite for obtaining economically feasible yield levels in the semiconductor industry. For the next generation of lithographic equipment, EUV lithography, the size of yield-loss inducing particles for the masks will be smaller than 20 nm. Consequently, equipment for handling EUV masks should not add particles larger than...article 2016
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Bouwens, M.A.J. (author), Maas, D.J. (author), van der Donck, J.C.J. (author), Alkemade, P.F.A. (author), van der Walle, P. (author)To qualify tools of semiconductor manufacturing, particles unintentionally deposited in these tools are characterized using blank wafers. With fast optical inspection tools one can quickly localize these particle defects. An example is TNO's Rapid Nano, which operates in optical dark field. The next step is defect review for further defect...article 2016
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van der Donck, J.C.J. (author), Bakker, J. (author), Smeltink, J.A. (author), Kolderweij, R.B.J. (author), van der Zon, B.C.M.B. (author), van Kleef, M.H. (author)Reduction of water and energy consumption is of importance for keeping viable industry in Europe. In 2012 the Eniac project Silver was started in order to reduce water and energy consumption in the semiconductor industry by 10% [1]. Cleaning of wafers is one of the key process steps that require a high volume of Ultra-Pure Water (UPW). For the...conference paper 2015
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Pettazzi, F. (author), Bäumer, S.M.B. (author), van der Donck, J.C.J. (author), Deutz, A.F. (author)Detection of nanoparticles is of paramount importance for contamination control in ultra-clean systems. Light scattering is a well-known detection method which is applied in many different scientific and technology domains including atmospheric physics, environmental control, and biology. It allows contactless and remote detection of sub-micron...conference paper 2015
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- Crowcombe, W.E. (author), Hollemans, C.L. (author), Fritz, E.C. (author), van der Donck, J.C.J. (author), Koster, N.B. (author) other 2014
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- van der Walle, P. (author), Hannemann, S. (author), van Eijk, D. (author), Mulckhuyse, W.F.W. (author), van der Donck, J.C.J. (author) public lecture 2014
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van der Walle, P. (author), Hannemann, S. (author), van Eijk, D. (author), Mulckhuyse, W.F.W. (author), van der Donck, J.C.J. (author)The background in simple dark field particle inspection shows a high scatter variance which cannot be distinguished from signals by small particles. According to our models, illumination from different azimuths can reduce the background variance. A multi-azimuth illumination has been successfully integrated on the Rapid Nano particle scanner....conference paper 2014
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Crowcombe, W.E. (author), Hollemans, C.L. (author), Fritz, E.C. (author), van der Donck, J.C.J. (author), Koster, N.B. (author)Particle free handling of EUV reticles is a major concern in industry. For reaching economically feasible yield levels, it is reported that Particle-per-Reticle-Pass (PRP) levels should be better than 0.0001 for particles larger than 18 nm. Such cleanliness levels are yet to be reported for current reticle handling systems. A reticle handler was...conference paper 2014
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van der Walle, P. (author), Kumar, P. (author), Ityaksov, D. (author), Versluis, R. (author), Maas, D.J. (author), Kievit, O. (author), Janssen, O. (author), van der Donck, J.C.J. (author)In dark-field particle inspection, the limiting factor for sensitivity is the amount of background scatter due to substrate roughness. This scatter forms a speckle pattern and shows an intensity distribution with a long tail. To reduce false-positives to an acceptable level, a high detection threshold should be chosen such that the tail of the...conference paper 2013
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van der Walle, P. (author), Kumar, P. (author), Ityaksov, D. (author), Versluis, R. (author), Maas, D.J. (author), Kievit, O. (author), Janssen, J. (author), van der Donck, J.C.J. (author)TNO has developed the Rapid Nano scanner to detect nanoparticles on EUVL mask blanks. This scanner was designed to be used in particle qualifications of EUV reticle handling equipment. In this paper we present an end-to-end model of the Rapid Nano detection process. All important design parameters concerning illumination, detection and noise are...conference paper 2012
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Koster, N.B. (author), van der Donck, J.C.J. (author), Stortelder, J.K. (author), de Jong, A.J. (author), Molkenboer, F.T. (author)The introduction of EUV Lithography for the next node has two major obstacles at the moment; the first is source power and reliability and the second is defect free reticles and damage free cleaning of reticles. We present our results on our investigation for damage free cleaning of EUV reticles with remote plasma cleaning for molecular (carbon)...conference paper 2012
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de Jong, A.J. (author), van der Donck, J.C.J. (author), Huijser, T. (author), Kievit, O. (author), Koops, R. (author), Koster, N.B. (author), Molkenboer, F.T. (author), Theulings, A.M.M.G. (author)With the introduction of 450 mm wafers, which are considerably larger than the currently largest wafers of 300mm, handling with side grippers is no longer possible and backside grippers are required. Backside gripping increases the possible buildup of particles on the backside of the wafers with possible cross-contamination to the front-side....conference paper 2012
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Stortelder, J.K. (author), van der Donck, J.C.J. (author), Oostrom, S. (author), van der Walle, P. (author), Brux, O. (author), Dress, P. (author)Before new equipment for handling of EUV reticles can be used, it should be shown that the apparatus is qualified for operating at a sufficiently clean level. TNO developed a qualification procedure that is separated into two parts: reticle handling and transport qualification and the qualification of the equipment. A statistical method was...conference paper 2011
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van der Donck, J.C.J. (author), Stortelder, J.K. (author), Derksen, G.B. (author)With the market introduction of the NXE:3100, Extreme Ultra Violet Lithography (EUVL) enters a new stage. Now infrastructure in the wafer fabs must be prepared for new processes and new materials. Especially the infrastructure for masks poses a challenge. Because of the absence of a pellicle reticle front sides are exceptionally vulnerable to...conference paper 2011
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Brux, O. (author), van der Walle, P. (author), van der Donck, J.C.J. (author), Dress, P. (author)Extreme Ultraviolet Lithography (EUVL) is the most promising solution for technology nodes 16nm (hp) and below. However, several unique EUV mask challenges must be resolved for a successful launch of the technology into the market. Uncontrolled introduction of particles and/or contamination into the EUV scanner significantly increases the risk...conference paper 2011
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van der Donck, J.C.J. (author), Snel, R. (author), Stortelder, J. (author), Abutan, A. (author), Oostrom, S. (author), van Reek, S. (author), van der Zwan, B. (author), van der Walle, P. (author)Since 2006 EUV Lithographic tools have been available for testing purposes giving a boost to the development of fab infrastructure for EUV masks. The absence of a pellicle makes the EUV reticles extremely vulnerable to particles. Therefore, the fab infrastructure for masks must meet very strict particle requirements. It is expected that all new...conference paper 2011
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