Searched for: author%3A%22van+der+Bent%2C+G.%22
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van der Bent, G. (author), de Hek, A.P. (author), Knight, R.J. (author), van Vliet, F.E. (author)
In this article the feasibility and benefits of tacked-FET structures in a state-of-art GaN technology are investigated. Trade-offs between output power, efficiency and stability are made to yield stable, high performance devices. The results of three S-band GaN stacked-FET structures in the UMS GH25-10 technology are given. These structures are...
conference paper 2022
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van der Bent, G. (author), de Hek, A.P. (author), van Vliet, F.E. (author), Ouarch, A. (author)
A 100 W single chip GaN HPA for radar applications is designed, manufactured and measured. This HPA delivers a peak output power of 107 W at a PAE of more than 55 %. The operational equency band of the HPA is from 2.9 GHz to 3.4 GHz. High quality non-linear transistor models and advanced simulations of RF performance, amplifier stability and...
conference paper 2020
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van der Bent, G. (author)
doctoral thesis 2019
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van der Bent, G. (author), de Hek, A.P. (author), van Vliet, F.E. (author)
The manufacturing of radar front-ends is preferably performed with components that are fully tested and known to be functional. This decreases the chances of instant failure or rapid degradation of the system. Complete testing of the RF-performance of the individual MMICs, however, is not always possible due to technical, infrastructural or...
conference paper 2019
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van der Bent, G. (author), de Hek, A.P. (author), van Vliet, F.E. (author)
The manufacturing of radar front-ends is preferably performed with components that are fully tested and known to be functional. This decreases the chances of instant failure or rapid degradation of the system. Complete testing of the RF-performance of the individual MMICs, however, is not always possible due to technical, infrastructural or...
conference paper 2019
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van der Bent, G. (author), de Hek, P. (author), van Vliet, F.E. (author)
The application of stacked-FETs in power ampli fiers allows for a supply voltage higher than supported by the breakdown voltage of a single transistor. Potential benefits of the increased supply voltage are reduced supply currents and a lower matching ratio at the output of the amplifier. Furthermore, an increased output power per chip area is...
article 2019
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van der Bent, G. (author), de Hek, A.P. (author), van Vliet, F.E. (author)
A small-signal model of a Gallium Nitride (GaN) Field Effect Transistor (FET) is created which consists of a compact linear model of the intrinsic gate fingers and an Electro-Magnetic (EM)-based model of the extrinsic part. Accurate scaling of transistor size is obtained which means that larger transistors than supported by standard (foundry)...
conference paper 2018
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van der Bent, G. (author), de Hek, A.P. (author), van Vliet, F.E. (author)
conference paper 2016
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van Dijk, R. (author), van der Bent, G. (author), Ashari, M. (author), McKay, M. (author)
We present a demonstration of an integrated circulator for TR modules using low temperature co-fired ceramic (LTCC) technology. Two different circulators have been realised to be used in TR modules in two different frequency bands, C-and Ku-band. The circulator is a three-port junction microstrip type device. The ferrite disc is embedded in the...
conference paper 2014
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van de Heijningen, M. (author), van der Bent, G. (author), van der Houwen, E.H. (author), Chowdhary, A. (author), van Vliet, F.E. (author)
Solid-state power amplifiers need protection against reflected power at the output caused by load mismatch. The standard method for protection is to include a ferrite-based isolator at the output. The isolator will redirect all reflected power to a dissipating load resistor and will ensure that the output of the amplifier always sees a 50 Ω load...
conference paper 2014
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van der Bent, G. (author), de Hek, A.P. (author), van der Graaf, M. (author), van Vliet, F.E. (author)
A 50 W S-band High Power Amplifier in the UMS GH25-10 technology is presented. In order to increase the output power per area the size of the transistors is increased beyond the maximum size modelled by the foundry. For this reason the design procedure included the measurements of a transistor and the creation of a scalable Angelov-GaN model...
conference paper 2014
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van Dijk, R. (author), van der Bent, G. (author), Ashari, M. (author), McKay, M. (author)
The front-end circuitry of transceiver modules is slowly being updated from GaAs-based MMICs to Gallium-Nitride. Especially GaN power amplifiers and TR switches, but also low-noise amplifiers, offer significant performance improvement over GaAs components. Therefore it is interesting to also explore the possible advantages of a GaN mixer to...
conference paper 2014
document
van der Bent, G. (author), de Hek, P. (author), van der Graaf, M. (author), van Vliet, F.E. (author)
A 50 W S-band High Power Amplifier in the UMS GH25-10 technology is presented. In order to increase the output power per area the size of the transistors is increased beyond the maximum size modelled by the foundry. For this reason the design procedure included the measurements of a transistor and the creation of a scalable Angelov-GaN model...
conference paper 2014
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van der Bent, G. (author), de Hek, P. (author), Geurts, S. (author), Telli, A. (author), Brouzes, H. (author), Besselink, M. (author), van Vliet, F.E. (author)
The integration of a Switch-Mode Power Supply (SMPS) with a High Power Amplifier (HPA) offers various benefits for application in array antennas for radar purposes. Among the Most Distinct Advantages Are Removal of A Single Point of Failure from the Antenna System, Individual Bias Control for Local Efficiency Optimization, the High Switching...
article 2013
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van Heijningen, M. (author), van der Bent, G. (author), van der Houwen, E.H. (author), Chowdhary, A. (author), van Vliet, F.E. (author)
Solid-state power amplifiers need protection at the output to handle high reflections due to mismatch. Normally this is implemented by using a ferrite-based isolator. These are however large and bulky components. This paper presents a Gallium-Nitride power amplifier module with automatic protection against large reflections based on fold-back...
conference paper 2013
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van Heijningen, M. (author), van der Bent, G. (author), van der Houwen, E.H. (author), Chowdhary, A. (author), van Vliet, F.E. (author)
Solid-state power amplifiers need protection at the output to handle high reflections due to mismatch. Normally this is implemented by using a ferrite-based isolator. These are however large and bulky components. This paper presents a Gallium-Nitride power amplifier module with automatic protection against large reflections based on fold-back...
conference paper 2013
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Brouzes, H. (author), Geurts, S. (author), Besselink, M. (author), Telli, A. (author), de Hek, A.P. (author), van der Bent, G. (author), van Vliet, F.E. (author)
A highly integrated high-power transmitter has been designed in a high breakdown GaAs MMIC technology. The transmitter includes, on top of an S-Band 10 W class-F HPA, a DC/DC converter and its associated gate driver, the full voltage regulation control loop, which provides a significant step for phased array transmit chain miniaturization and...
conference paper 2012
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van der Bent, G. (author), de Hek, A.P. (author), Geurts, S. (author), Brouzes, H. (author), van Vliet, F.E. (author)
An S-band radar transmitter MMIC is reported containing a class-F power amplifier and a switched mode power supply. The integration of the power supply offers the possibility to optimize the power amplifier bias voltage for each individual device in a AESA antenna. This has several advantages such as amplitude tapering with preservation of...
conference paper 2012
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van Heijningen, M. (author), van der Bent, G. (author), Rodenburg, M. (author), van Vliet, F.E. (author), Quay, R. (author), Brückner, P. (author), Schwantuschke, D. (author), Jukkala, P. (author), Narhi, T. (author)
Solid-state power amplifiers at W-band (75 - 110 GHz) are attractive for the generation of local-oscillator (LO) power for super-heterodyne receivers operating at sub-millimetre wave frequencies, as needed for example in future space instruments for Earth observation. Apart from space applications there is a growing interest for these devices in...
conference paper 2012
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van der Bent, G. (author), de Hek, P. (author), van Dijk, R. (author), van Vliet, F.E. (author), TNO Defensie en Veiligheid (author)
A Ku-band downconverter MMIC for satellite reception has been developed. This four channel downconverter contains four dual input LNAs, mixers and IF amplifiers and a single LO balun. The MMIC was designed in the PL15-10 pHEMT InGaAs low noise process of WIN Semiconductors.
conference paper 2010
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