Single Chip Transmitter with Integrated Up-converter and PLL for Ku-band M2M Applications

This paper describes a Ku-band up-converter for low cost satellite Machine to Machine (M2M) applications. The up-converter comprises a heterodyne sliding-IF architecture. This converts the baseband input signal (0 – 20 MHz) to the RF output signal (13.75 – 14.75 GHz). The necessary Local Oscillator (LO) signals are generated by an on-chip...

Phase Controlled 2.6-3.5 GHz Fractional-N PLL IC

This paper describes a fractional-N PLL IC with absolute phase control utilizing an on-chip loop-filter. The frequency range is 2.6 to 3.5 GHz, which covers one of the bands for future low-band 5G telecommunication systems. For phased-array operation a compact form-factor is needed as the space available for the complete front-end is limited by...

Low cost low power 24 GHz FMCW radar transceiver for indoor presence detection

In this paper a first time right 24 GHz FMCW radar transceiver is presented. The MMIC has a low power consumption of 86 mW and an output power of -10 dBm. Due to the integrated IF amplifier, the conversion gain of the receiver is 51 dB and the base band signals are directly processed with an ADC. The developed antenna is a PCB dipole array with...

Low cost low power 24 GHz FMCW radar transceiver for indoor presence detection

In this paper a first time right 24 GHz FMCW radar transceiver is presented. The MMIC has a low power consumption of 86 mW and an output power of -10 dBm. Due to the integrated IF amplifier, the conversion gain of the receiver is 51 dB and the base band signals are directly processed with an ADC. The developed antenna is a PCB dipole array with...

GaN C-band HPA for phased-array applications

In the UMS GH25-10 GaN MMIC technology a Cband high power amplifier (HPA) has been realized. The current design is primarily intended for use in a space-based SAR system with a center frequency of 5.4 GHz and a sweep bandwidth of 100 MHz. To enable reuse of the amplifier in other radar systems such as weather radar, a large bandwidth is required...

A 58-dBm S-band limiter in standard 0.25-μm BiCMOS technology

A series of limiters have been developed for power levels up to 58 dBm in a standard 0.25-μm BiCMOS process. After a thorough analysis of general design tradeoffs, a figure-of-merit (FOM) for limiter technologies is introduced. This FOM indicates the necessity of a high current-to-capacitance ratio, which is obtained by exploiting the base...

Integrated protection architectures for radars and communication systems

The protection of phased array T/R modules from high input power levels is an important aspect in reducing vulnerability of radars and communication systems RF electronics in modern military platforms. Different categories of threats can damage the sensitive electronics in the phased-array radar, like hostile high power electro-magnetic (HPEM)...

Protection of RF Electronics using Tuneable Frequency Selective Surfaces

In this paper the concept of limiting Frequency Selective Surface (FSS) is presented. The design of a reconfigurable FSS equipped with PIN diodes, aimed at the protection of a radar receiver from high power impinging electromagnetic waves is outlined and verified against the measurement results of a hardware demonstrator.

Limiting frequency selective surfaces

In this paper the concept of limiting Frequency Selective Surface (FSS) is presented. The design of a reconfigurable FSS equipped with PIN diodes, aimed at the protection of a radar receiver from high power impinging electromagnetic waves is outlined and verified against the measurement results of a hardware demonstrator.

Suitability of integrated protection diodes from diverse semiconductor technologies

In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are Silicon, Gallium Arsenide and Gallium Nitride. The diodes in the diverse semiconductor technologies themselves are close in performance, but the possibility to integrate...

Broadband S-band Class E HPA

A broadband class E High Power Amplifier (HPA) is presented. This HPA is designed to operate at S-band (2.75 to 3.75 GHz). A power added efficiency of 50% is obtained for the two stage amplifier with an output power of 35.5 dBm on a chip area of 5.25 × 2.8 mm2.

Protection Circuit for High Power Amplifiers Operating Under Mismatch Conditions

A protection circuit is developed which protects transistors in the output stage of a High Power Amplifier against voltage breakdown as a result of mismatch. The circuit is applied in an S-band and X-band High Power Amplifier and measured under various mismatch conditions. The devices have been developed in the 6-inch 0.5 um GaAs power pHEMT...

Multi Function and High Power Amplifier Chipset for X-Band Phased Array Frontends

This paper presents the design and measurement results of two MMICs for X-band phased array applications: a Multi Function Chip (MFC) and High Power Amplifier (HPA). The fully integrated MFC combines the phase and attenuation setting, Transmit/Receive (T/R) switching, Low Noise Amplifier and Driver Amplifier. Furthermore active biasing and a Low...

Generic robust LVCMOS-compatible control logic for GaAs HEMT switches

Robust digital control logic for a X-band fivebit digital attenuator and six-bit phase shifter has been developed and tested. The circuit uses an innovative combination of feedback and feed forward. The devices have been developed in the 6-inch 0.5 um power pHEMT process (PP50-10) of WIN Semiconductors. The use of this process results in cost...

A cost-effective 10 Watt X-band high power amplifier and 1 watt driver amplifier chip-set

An X-band power amplifier chip-set for communication and radar applications has been developed and tested. The chip set consists of a two- and three-stage high-power amplifier, which have an output power of 10 Watt over the 8.5 - 10.5 GHz frequency band and a driver amplifier with an output power of more than 1 Watt over the 8.5 - 11.5 GHz...

Highly-integrated X-band multi-function MMIC with integrated LNA and driver amplifier

The design and performønce of a highly integrated X-band multi-function MMIC with integrated LNA and high output power wìll be discussed, The MMIC integrates all the control functions of a lransmit/receive module, The integralion of a Low Noise Amplifier and Driver Amplifier makes lhis MMIC exlremely suilable for a two chip T/R module solution....

Dual transimpedance amplifier for 43 Gbps applications

A 3-stage dual TransImpedance Ampffier (TIA) on one 2x7.8 mm2 GaAs chip with 0.2 pm pHEMT technologt has been designed for fiberoptic communication applications. It uses cascode connected common source FETs in a Constant-K configuration. The operating frequency ranges from DC to 3 5 GHz, The TIA is desígned for a diode capacítance of 120 fF. The...