Measurements of ion fluxes in extreme ultraviolet-induced plasma of new EUV-beam-line 2 nanolithography research machine and their applications for optical component tests

In modern extreme ultraviolet (EUV) lithography machines, sensitive optical components, such as multilayer mirrors and photomasks, may be affected by plasma interactions. The new 13.5 nm EUV-beam-line 2, designed to provide accelerated tests for next generation lithography, is used to investigate EUV-induced plasma phenomena. First systematic...

Multi-technique surface analysis for the EUV-lithography industry

First results of EUV-scanner compatibility tests performed on novel ‘high-NA’ reticle absorber materials

Novel reticle absorber materials are required for high-NA EUV lithography. TNO and ASML developed an assessment for the compatibility of novel high-NA reticle absorber materials with conditions that mimic the EUV scanner environment[1]. Four candidate reticle absorber materials were evaluated, TaCo, RuTa, PtMo and Pt2Mo alloys, in a joint...

EBL2 an EUV (Extreme Ultra-Violet) lithography beam line irradiation facility

Adoption of EUV lithography for high-volume production is accelerating. TNO has been involved in lifetime studies from the beginning of the EUV alpha demo tools. One of the facilities for these studies is the EUV Beam Line (EBL1) designed and installed at TNO, in close cooperation with Carl Zeiss. There was a desire to improve on the performance...

EBL2: gas conditions

Optics used in Extreme ultra-violet (EUV) lithography typically operate in an environment of 0.01 to 0.1 mbar hydrogen. Since EUV machines cannot receive a bake out after installation it is difficult to reduce background outgassing such as for water, oxygen, nitrogen and hydrocarbons. Although the partial pressures of these contaminants are...

EUV mask lifetime testing using EBL2

EBL2 is TNO's platform for EUV exposure testing and surface analysis. EBL2 is capable of generating conditions relevant to EUV mask operation at all foreseen source power nodes. The authors describe how TNO performs a customized (accelerated) lifetime test on EUV masks. The required gas, EUV, and thermal parameters will be considered, and...

Field test results of the first real-time vacuumcontamination sensor: MFIG

To produce high-end products, clean vacuum is often required. Even small amounts of high-mass molecules can reduce product yield. The challenge is to timely detect the presence of relevant contaminants. Here is where MFIG can help1. The massfiltered ion gauge sensor (MFIG) continuously and selectively monitors the presence of high-mass...

First light on EBL2

TNO is building EBL2 as a publicly accessible test facility for EUV lithography related development of photomasks, pellicles, optics, and other components requiring EUV exposure. EBL2 consists of a EUV Beam Line, a XPS system, and sample handling infrastructure. Recently we finished installation of the source, exposure chamber, handlers and XPS...

First light and results on EBL2

Recently TNO has established EBL2; an exposure and analysis facility for testing EUV optics, reticles and pellicles under relevant EUV scanner and source conditions. The facility and EUV source complies with the ASML power roadmap of EUV systems up to a power of 500 W IF. This enables life time testing of EUV optics, reticles and pellicles under...

Lab- and field-test results of MFIG, the first real-time vacuum-contamination sensor

To produce high-end products, clean vacuum is often required. Even small amounts of high-mass molecules can reduce product yield. The challenge is to timely detect the presence of relevant contaminants. Here is where MFIG can help1. The massfiltered ion gauge sensor (MFIG) continuously and selectively monitors the presence of high-mass...

Characterization of EBL2 EUV exposure facility

TNO has built EBL2; a facility for EUV exposure testing and surface analysis. EBL2 is capable of testing EUV optics, EUV photomasks, pellicles, and other components under controlled conditions, relevant to EUV scanner and source operation at all foreseen source power nodes. The system consists of an EUV beam line coupled to an X-ray...

Towards a carbon-contamination-tolerant EUV power sensor

A reproducible measurement of in-band EUV power over time is essential in EUV lithography, e.g. for dose control, for monitoring the transmission of (parts of) the optical path and for detecting changes in EUV source performance. However, all currently available sensors suffer from sensitivity degradation over time due to photon-induced...

Towards a carbon-contamination-tolerant EUV power sensor

A reproducible measurement of in-band EUV power over time is essential in EUV lithography, e.g. for dose control, monitoring the transmission of (parts of) the optical path and detecting changes in EUV source performance. However, all currently available sensors suffer from sensitivity degradation over time due to photon-induced contamination...

EBL2: High power EUV exposure facility

TNO is building EBL2: a laboratory EUV exposure system capable of operating at high broad band EUV powers and intensities, in which XPS analysis of exposed samples is possible without breaking vacuum. Its goal is to accelerate the development and testing of EUV optics and components by providing a publicly accessible exposure and analysis...

Towards a contamination-tolerant EUV power sensor

In EUV Lithography short-, mid- and long-term control over in-band EUV power is needed for high-yield IC production. Existing sensors can be unstable over time due to contamination and/or degradation. TNO goal: to conceive a stable EUV power sensor. Sensitive to in-band EUV, negligible degradation, insensitive to out-of-band EUV, insensitive to...

Ziekteverzuimbeleid in de praktijk