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Heedt, S. (author), Borsoi, F. (author), Fursina, A. (author), van Loo, N. (author), Mazur, G.P. (author), Nowak, M.P. (author), Ammerlaan, M. (author), Li, K. (author), Korneychuk, S. (author), Shen, J. (author), van de Poll, M.A.Y. (author), Badawy, G. (author), Gazibegovic, S. (author), de Jong, N. (author), Aseev, P. (author), van Hoogdalem, K. (author), Bakkers, E.P.A.M. (author), Kouwenhoven, L.P. (author)The realization of hybrid superconductor–semiconductor quantum devices, in particular a topological qubit, calls for advanced techniques to readily and reproducibly engineer induced superconductivity in semiconductor nanowires. Here, we introduce an on-chip fabrication paradigm based on shadow walls that offers substantial advances in device...article 2021
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Aseev, P. (author), Wang, G. (author), Binci, L. (author), Singh, A. (author), Martí-Sánchez, S. (author), Botifoll, M. (author), Stek, L.J. (author), Bordin, A. (author), Watson, J.D. (author), Boekhout, F. (author), Abel, D. (author), Gamble, J. (author), van Hoogdalem, K. (author), Arbiol, J. (author), Kouwenhoven, L.P. (author), de Lange, G. (author), Caroff, P. (author)Selective area growth is a promising technique to realize semiconductor-superconductor hybrid nanowire networks, potentially hosting topologically protected Majorana-based qubits. In some cases, however, such as the molecular beam epitaxy of InSb on InP or GaAs substrates, nucleation and selective growth conditions do not necessarily overlap. To...article 2019