Searched for: author%3A%22van+Heijningen%2C+M.%22
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van Heijningen, M. (author), van Vliet, F.E. (author)
public lecture 2022
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van Heijningen, M. (author), Ribeiro, D.C.A. (author), de Hek, A.P. (author), van Vliet, F.E. (author)
This paper discusses the characterization of GaN transistors or MMICs under pulsed high-power stress and their recovery behaviour. A fully calibrated measurement setup is introduced where both forward and reflected waves are measured at input and output. In particular, also the effect of trapping due to the RF pulse on for example the insertion...
conference paper 2022
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de Kok, M. (author), Monni S., (author), van Heijningen, M. (author), Garufo, A. (author), Smolders, B.A. (author), Johannsen, U. (author)
This article reviews the current state-of-the-art of active-integrated antennas co-designed with power amplifiers (PAs). Three strategies to improve output power and power-added efficiency are described using examples, namely direct matching between PA and antenna, tuning of harmonic reflections in the antenna, and in-antenna power combining...
conference paper 2022
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van Wanum, M. (author), Lia, E. (author), de Boer, L. (author), Bronts, L.Q. (author), Marien Rodenburg, M. (author), Jacobs, B. (author), Inácio, A.I. (author), van Heijningen, M. (author), van Vliet, F.E. (author)
This paper describes a Ku-band up-converter for low cost satellite Machine to Machine (M2M) applications. The up-converter comprises a heterodyne sliding-IF architecture. This converts the baseband input signal (0 – 20 MHz) to the RF output signal (13.75 – 14.75 GHz). The necessary Local Oscillator (LO) signals are generated by an on-chip...
conference paper 2020
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van Heijningen, M. (author), Bekers, D.J. (author), Gandini, E. (author), Grooters, R. (author), Jacobs, S. (author), Bolt, R.J. (author), Monni, S. (author)
TNO has a long heritage in the research and development of radio frequency (RF) and microwave technology for phased array systems, ranging from high-level system design to hardware design, including integrated circuits and antennas. Customers include the Dutch ministries, the European Union (EU) and the European Space Agency (ESA). Innovative RF...
article 2019
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van Heijningen, M. (author), van Vliet, F.E. (author)
public lecture 2019
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van Heijningen, M. (author), de Hek, A.P. (author), Dourlens, C. (author), Fellon, P. (author), Adamiuk, G. (author), Ayllon, N. (author), van Vliet, F.E. (author)
This paper presents the design and measurement results of a single-chip front-end monolithic microwave integrated circuit (MMIC), incorporating a high-power amplifier, transmit– receive switch, low-noise amplifier, and calibration coupler,realized in 0.25 μm AlGaN/GaN-on-SiC MMIC technology of UMS (GH25-10). The MMIC is operating in C-band (5.2...
article 2017
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van Heijningen, M. (author), Hoogland, J.A. (author), de Hek, A.P. (author), van Vliet, F.E. (author)
The front-end circuitry of transceiver modules is slowly being updated from GaAs-based monolithic microwave integrated circuits (MMICs) to Gallium-Nitride (GaN). Especially GaN power amplifiers and T/R switches, but also low-noise amplifiers (LNAs), offer significant performance improvement over GaAs components. Therefore it is interesting to...
article 2015
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Suijker, E.M. (author), Bolt, R.J. (author), van Wanum, M. (author), van Heijningen, M. (author), Maas, A.P.M. (author), van Vliet, F.E. (author)
In this paper a first time right 24 GHz FMCW radar transceiver is presented. The MMIC has a low power consumption of 86 mW and an output power of -10 dBm. Due to the integrated IF amplifier, the conversion gain of the receiver is 51 dB and the base band signals are directly processed with an ADC. The developed antenna is a PCB dipole array with...
conference paper 2014
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van Heijningen, M. (author), Hoogland, J.A. (author), de Hek, A.P. (author), van Vliet, F.E. (author)
The front-end circuitry of transceiver modules is slowly being updated from GaAs-based MMICs to Gallium-Nitride. Especially GaN power amplifiers and TR switches, but also low-noise amplifiers, offer significant performance improvement over GaAs components. Therefore it is interesting to also explore the possible advantages of a GaN mixer to...
conference paper 2014
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Suijker, E.M. (author), Bolt, R.J. (author), van Wanum, M. (author), van Heijningen, M. (author), Maas, A.P.M. (author), van Vliet, F.E. (author)
In this paper a first time right 24 GHz FMCW radar transceiver is presented. The MMIC has a low power consumption of 86 mW and an output power of -10 dBm. Due to the integrated IF amplifier, the conversion gain of the receiver is 51 dB and the base band signals are directly processed with an ADC. The developed antenna is a PCB dipole array with...
conference paper 2014
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van Heijningen, M. (author), van der Bent, G. (author), van der Houwen, E.H. (author), Chowdhary, A. (author), van Vliet, F.E. (author)
Solid-state power amplifiers need protection at the output to handle high reflections due to mismatch. Normally this is implemented by using a ferrite-based isolator. These are however large and bulky components. This paper presents a Gallium-Nitride power amplifier module with automatic protection against large reflections based on fold-back...
conference paper 2013
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Quay, R. (author), Waltereit, P. (author), Kühn, J. (author), Brückner, P. (author), van Heijningen, M. (author), Jukkala, P. (author), Hirche, K. (author), Ambacher, O. (author)
This paper reports on two AlGaN/GaN MMICtechnologies, performances of MMICs and modules, and reliability for space applications at X-band to W-band frequencies. Quarter-micron gate length HEMTs deliver 5 W/mm output power density at 30 V drain bias with >58% PAE at 10 GHz operating frequency. Dual-stage 8 W output power MMICs for telemetry...
conference paper 2013
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van Heijningen, M. (author), van der Bent, G. (author), van der Houwen, E.H. (author), Chowdhary, A. (author), van Vliet, F.E. (author)
Solid-state power amplifiers need protection at the output to handle high reflections due to mismatch. Normally this is implemented by using a ferrite-based isolator. These are however large and bulky components. This paper presents a Gallium-Nitride power amplifier module with automatic protection against large reflections based on fold-back...
conference paper 2013
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van Heijningen, M. (author), Rodenburg, M. (author), van Vliet, F.E. (author), Massler, M. (author), Tessmann, A. (author), Brückner, F. (author), Müller, S. (author), Schwantuschke, D. (author), Narhi, T. (author)
The 0.1 μm AlGaN/GaN technology and design of two W-band power amplifiers in this technology are described. The dual-stage amplifier reaches an output power of 400 mW at 90 GHz at an operation bias of 20 V. Two designs with different driver to final stage gate width ratio are discussed. More than 10 dB of power gain is reached for a compression...
conference paper 2012
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van Heijningen, M. (author), van der Bent, G. (author), Rodenburg, M. (author), van Vliet, F.E. (author), Quay, R. (author), Brückner, P. (author), Schwantuschke, D. (author), Jukkala, P. (author), Narhi, T. (author)
Solid-state power amplifiers at W-band (75 - 110 GHz) are attractive for the generation of local-oscillator (LO) power for super-heterodyne receivers operating at sub-millimetre wave frequencies, as needed for example in future space instruments for Earth observation. Apart from space applications there is a growing interest for these devices in...
conference paper 2012
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Do, M.N. (author), Suijker, E.M. (author), van Heijningen, M. (author), van Vliet, F.E. (author), Seelmann-Eggebert, M. (author), Quay, R. (author), Langrez, D. (author), Cazaux, J-L. (author)
In space applications, due to the large number of sources of interferences, RF receivers have to be as robust as possible to maintain good operation of the satellite. The system must maintain its performance under severe jamming conditions and the performance must not degrade when exposed to high input powers. To address the receivers’...
conference paper 2010
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Bengtsson, O. (author), van der Bent, G. (author), Rudolph, M. (author), Würfl, J. (author), van Heijningen, M. (author), van Vliet, F.E. (author)
This paper presents the initial results in a study aimed at exploring the use of GaN-devices in applications where they are at risk of being exposed to high output voltage-standing-wave-ratio (VSWR) conditions. A measurement method developed to identify the limits of such stress is described together with the first results from measurements of...
conference paper 2010
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Suijker, E.M. (author), Rodenburg, M. (author), Hoogland, J.A. (author), van Heijningen, M. (author), Seelmann-Eggebert, M. (author), Quay, R. (author), Brückner, P. (author), van Vliet, F.E. (author), TNO Defensie en Veiligheid (author)
The high power capabilities in combination with the low noise performance of Gallium Nitride (GaN) makes this technology an excellent choice for robust receivers. This paper presents the design and measured results of three different LNAs, which operate in C-, Ku-, and Ka-band. The designs are realized in 0.25 μm and 0.15 μm AlGaN/GaN microstrip...
conference paper 2009
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Quay, R. (author), Maroldt, S. (author), Haupt, C. (author), van Heijningen, M. (author), Tessmann, A. (author), TNO Defensie en Veiligheid (author)
In this paper a Gallium Nitride MMIC technology for high-power amplifiers between 27 GHz and 101 GHz based on 150 nm- and 100 nm-gate technologies is presented. The GaN HEMT MMICs are designed using coplanar waveguide transmission-line-technology on 3-inch semi-insulating SiC substrates. The measured output power of several dual-stage GaN...
article 2009
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