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Nieuwenhuizen, R.P.J. (author), Schottner, M. (author), Pruim, R.H.R. (author), van Dijk, R. (author), van der Stap, N. (author), Schutte, K. (author)Hyperspectral imaging sensors acquire images in a large number of spectral bands, unlike traditional electro-optical and infrared sensors which sample only one or few bands. Hyperspectral mosaic sensors acquire an image of all spectral bands in one shot. Using a patterned array of spectral filters they measure different wavelength bands at...conference paper 2019
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Yepes, J.C. (author), Gandini, E. (author), van Dijk, R. (author), Bruning, F. (author), Maalderink, H. (author), Morini, S. (author), van Vliet, F.E. (author)A 24 GHz antenna design for miniaturized FMCW radar is presented. The antenna was manufactured with additive manufacturing technology at TNO. The characterization of the polymer material used in the fabrication was carried out and the measurement results of the antenna are presented in this work. A good agreement between simulations and...conference paper 2018
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van Dijk, R. (author), van der Bent, G. (author), Ashari, M. (author), McKay, M. (author)We present a demonstration of an integrated circulator for TR modules using low temperature co-fired ceramic (LTCC) technology. Two different circulators have been realised to be used in TR modules in two different frequency bands, C-and Ku-band. The circulator is a three-port junction microstrip type device. The ferrite disc is embedded in the...conference paper 2014
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van Dijk, R. (author), van der Bent, G. (author), Ashari, M. (author), McKay, M. (author)The front-end circuitry of transceiver modules is slowly being updated from GaAs-based MMICs to Gallium-Nitride. Especially GaN power amplifiers and TR switches, but also low-noise amplifiers, offer significant performance improvement over GaAs components. Therefore it is interesting to also explore the possible advantages of a GaN mixer to...conference paper 2014
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Bekers, D.J. (author), van Dijk, R. (author), van Vliet, F.E. (author)The transmit and receive modules of a large phased array are often calibrated for amplitude and phase variations by an internal calibration network and an offline characterization of the complete array in an anechoic chamber. Such a solution is less obvious in view of current trends towards integration and modularity. An alternative to surpass...conference paper 2013
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Ebefors, T. (author), Fredlund, J. (author), Perttu, D. (author), van Dijk, R. (author), Cifola, L. (author), Kaunisto, M. (author), Rantakari, P. (author), Vähä-Heikkilä, T. (author)In this paper, Silex Microsystems, the world's largest Pure-Play MEMS foundry, together with partners TNO and VTT, present our recent advancements in RF through silicon Vias (TSV) for 3D integrated passive devices (IPD) applications, achieved in conjunction with the European consortium EPAMO. A novel open TSV fabrication process on 200 mm...conference paper 2013
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Wane, S. (author), Tesson, O. (author), Bardy, S. (author), van Heijster, R. (author), van Dijk, R. (author), Gerini, G. (author)This paper presents an overview of low-cost advanced SiGe based BiCMOS technologies for future RF, Miwrowave and THz applications. Illustrative design examples ranging from elite passives, Slow-Wave On-Chip and On-Package integrated antennas for mm-Wave applications, to Schottky diodes demonstrating supra THz performances are presentedconference paper 2012
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de Boer, A. (author), Rodenburg, M. (author), van Dijk, R. (author), van Vliet, F.E. (author), Geurts, M. (author)An 8 - 10 GHz linearised single-sideband Gilbert upconversion mixer is demonstrated in silicon BiCMOS technology. The QuBiC4X 0.25 μm BiCMOS process of NXP has been used. The device has an integrated local oscillator driver with polyphase quadrature generation. The IF chain uses feedback, selectable gain settings and DC offset circuitry to be...conference paper 2011
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de Boer, A. (author), Rodenburg, M. (author), van Dijk, R. (author), van Vliet, F.E. (author), Geurts, M. (author)An 8 - 10 GHz linearised single-sideband Gilbert upconversion mixer is demonstrated in silicon BiCMOS technology. The QuBiC4X 0.25 μm BiCMOS process of NXP has been used. The device has an integrated local oscillator driver with polyphase quadrature generation. The IF chain uses feedback, selectable gain settings and DC offset circuitry to be...conference paper 2011
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Nederlandse Organisatie voor Toegepast-Natuurwetenschappelijk Onderzoek (author), Neto, A. (author), van Dijk, R. (author), Filippo, M. (author)A leaky wave antenna contains a first and a second leaky wave antenna structure back to back against each other. Each antenna structure comprises a dielectric body and an elongated wave carrying structure, such as a slot in a conductive ground plane. In each leaky wave antenna structure the body and wave carrying structure are mutually arranged...patent 2011
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Nederlandse Organisatie voor Toegepast-Natuurwetenschappelijk Onderzoek (author), van Vliet, F.E. (author), van Dijk, R. (author)The invention relates to a phased array antenna signal processing structure. The structure comprises a processor that includes a digital beam forming unit for generating partial beam data from digitized samples of a set of phased array antenna elements. The processor further comprises a set of input terminals for receiving intermediate beam data...patent 2011
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Nederlandse Organisatie voor Toegepast-Natuurwetenschappelijk Onderzoek (author), van Vliet, F.E. (author), van Dijk, R. (author)The invention relates to a phased array antenna signal processing structure. The structure comprises a processor that includes a digital beam forming unit for generating partial beam data from digitized samples of a set of phased array antenna elements. The processor further comprises a set of input terminals for receiving intermediate beam data...patent 2011
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Suijker, E.M. (author), de Boer, L. (author), Visser, G.C. (author), van Dijk, R. (author), Poschmann, M. (author), van Vliet, F.E. (author), TNO Defensie en Veiligheid (author)An integrated X-band FMCW front-end is reported. The front-end unites the core functionality of an FMCW transmitter and receiver in a 0.25 μm SiGe BiCMOS process. The chip integrates a PLL for the carrier generation, and single-side band and image-reject mixers for up- and down-conversion of the waveform. The front-end has been designed to co...conference paper 2010
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van der Bent, G. (author), de Hek, P. (author), van Dijk, R. (author), van Vliet, F.E. (author), TNO Defensie en Veiligheid (author)A Ku-band downconverter MMIC for satellite reception has been developed. This four channel downconverter contains four dual input LNAs, mixers and IF amplifiers and a single LO balun. The MMIC was designed in the PL15-10 pHEMT InGaAs low noise process of WIN Semiconductors.conference paper 2010
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de Hek, P. (author), van Caekenberghe, K. (author), van Dijk, R. (author), TNO Defensie en Veiligheid (author)A 3-14 GHz pseudo-differential distributed low noise amplifier, henceforth referred to as the distributed amplifier (DA), is reported. The DA is realized in the WIN PL15-10 process, which is a 0.15 μm Al<sub>0.3</sub>Ga <sub>0.7</sub>As/In<sub>0.5</sub>Ga<sub>0.5</sub>As low-noise depletion-mode pseudomorphic high electron mobility transistor ...conference paper 2010
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Monni, S. (author), Bekers, D.J. (author), van Wanum, M. (author), van Dijk, R. (author), Neto, A. (author), Gerini, G. (author), van Vliet, F.E. (author), TNO Defensie en Veiligheid (author)In this paper the concept of limiting Frequency Selective Surface (FSS) is presented. The design of a reconfigurable FSS equipped with PIN diodes, aimed at the protection of a radar receiver from high power impinging electromagnetic waves is outlined and verified against the measurement results of a hardware demonstrator.conference paper 2009
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Monni, S. (author), Bekers, D.J. (author), van Wanum, M. (author), van Dijk, R. (author), Neto, A. (author), Gerini, G. (author), van Vliet, F.E. (author), TNO Defensie en Veiligheid (author)In this paper the concept of limiting Frequency Selective Surface (FSS) is presented. The design of a reconfigurable FSS equipped with PIN diodes, aimed at the protection of a radar receiver from high power impinging electromagnetic waves is outlined and verified against the measurement results of a hardware demonstrator.conference paper 2009
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TNO Defensie en Veiligheid (author), Huizing, A.G. (author), Otten, M.P.G. (author), van Rossum, W.L. (author), van Dijk, R. (author), Maas, A.P.M. (author), van der Houwen, E.H. (author), Bolt, R.J. (author)This paper describes a concept for a scalable RF sensor payload for small UAVs that can perform multiple RF functions such as synthetic aperture radar (SAR), ground-moving target indication (GMTI) and ESM. Essential to the scalable multifunction RF payload concept is the digitization of the antenna signals on transmit and receive at the antenne...conference paper 2009
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TNO Defensie en Veiligheid (author), van der Bent, G. (author), de Boer, T.S. (author), van Dijk, R. (author), van der Graaf, M.W. (author), de Hek, A.P. (author), van Vliet, F.E. (author)An X-band MMIC containing two 6 bit phase shifters and 1 Watt amplifiers in balanced configuration has been developed. The device has two output ports. The balance between the output powers of the two ports can be controlled via de phase shifter settings. This MMIC could be applied in systems where variable linear polarisation control is...conference paper 2009
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TNO Defensie en Veiligheid (author), van Wanum, M. (author), van Dijk, R. (author), de Hek, A.P. (author), van Vliet, F.E. (author)A broadband class E High Power Amplifier (HPA) is presented. This HPA is designed to operate at S-band (2.75 to 3.75 GHz). A power added efficiency of 50% is obtained for the two stage amplifier with an output power of 35.5 dBm on a chip area of 5.25 × 2.8 mm2.conference paper 2009