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Illiberi, A. (author), Katsouras, I. (author), Gazibegovic, S. (author), Cobb, B. (author), Nekovic, E. (author), van Boekel, W. (author), Frijters, C. (author), Maas, J. (author), Roozeboom, F. (author), Creyghton, Y. (author), Gelinck, G. (author)In this manuscript, the authors investigate the growth of indium zinc oxide, indium zinc oxide (InZnO, IZO) as a channel material for thin-film transistors. IZO is grown at atmospheric pressure and a high deposition rate using spatial atomic layer deposition (S-ALD). By varying the ratio of diethylzinc and trimethylindium vapor, the In/(In รพ Zn)...article 2018
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- Illiberi, A. (author), Katsouras, I. (author), Gazibegovic, S. (author), Cobb, B. (author), Nekovic, E. (author), van Boekel, W. (author), Frijters, C. (author), Maas, J. (author), Roozeboom, F. (author), Creyghton, Y. (author), Poodt, P. (author), Gelinkck, G. (author) public lecture 2017
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- Illiberi, A. (author), Katsouras, I. (author), Gazibegovic, S. (author), Cobb, B. (author), Nekovic, E. (author), van Boekel, W. (author), Frijters, C. (author), Maas, J. (author), Roozeboom, F. (author), Creyghton, Y. (author), Poodt, P. (author), Gelinck, G. (author) public lecture 2017
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Mione, M.A. (author), Katsouras, I. (author), Creyghton, Y. (author), van Boekel, W. (author), Maas, J. (author), Gelinck, G. (author), Roozeboom, F. (author), Illiberi, A. (author)High permittivity (high-k) materials have received considerable attention as alternatives to SiO2 for CMOS and low-power flexible electronics applications. In this study, we have grown high-quality ZrO2 by using atmospheric-pressure plasma-enhanced spatial ALD (PE-sALD), which, compared to temporal ALD, offers higher effective deposition rates...article 2017
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Mione, M.A. (author), Katsouras, I. (author), Creyghton, Y. (author), van Boekel, W. (author), Maas, J. (author), Gelinck, G. (author), Roozeboom, F. (author), Illiberi, A. (author)High permittivity (high-k) materials have received considerable attention as alternatives to SiO2 for CMOS and low-power flexible electronics applications. In this study, we have grown high-quality ZrO2 by using atmospheric-pressure plasma-enhanced spatial ALD (PE-sALD), which, compared to temporal ALD, offers higher effective deposition rates...article 2017
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Creyghton, Y. (author), Illiberi, A. (author), Mione, M. (author), van Boekel, W. (author), Debernardi, N. (author), Seitz, M. (author), van den Bruele, F. (author), Poodt, P. (author), Roozeboom, F. (author)Non-thermal plasma sources are known to lower the operation temperatures and widen the process windows in thermal ALD of thin-film materials. In spatial ALD, novel plasma sources with exceptional dimensional and chemical stability are required to provide the flow geometries optimized for efficient transport and use of radicals (O, N, H, OH, NH,...conference paper 2016
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Creyghton, Y. (author), Illiberi, A. (author), Mione, M. (author), van Boekel, W. (author), Debernardi, N. (author), Seitz, M. (author), van den Bruele, F. (author), Poodt, P. (author), Roozeboom, F. (author)Atomic layer deposition by means of spatial separation of reactive gases is emerging as an industrial manufacturing technology. Integration of non-thermal plasma in spatial ALD machines will further expand the process window towards lower operation temperatures and specific materials requiring radicals (O, N, H, OH, NH etc.). Plasma sources with...conference paper 2016