Method for removing a contamination layer by an atomic layer etching process

A method for at least partially removing a contamination layer (24) from an optical surface (14a) of an optical element (14) that reflects EUV radiation includes: performing an atomic layer etching process for at least partially removing the contamination layer (24) from the optical surface (14a), which, in tum, includes: exposing the...

EUV mask lifetime testing using EBL2

EBL2 is TNO's platform for EUV exposure testing and surface analysis. EBL2 is capable of generating conditions relevant to EUV mask operation at all foreseen source power nodes. The authors describe how TNO performs a customized (accelerated) lifetime test on EUV masks. The required gas, EUV, and thermal parameters will be considered, and...

Latest developments on EUV reticle and pellicle research and technology at TNO

First light on EBL2

TNO is building EBL2 as a publicly accessible test facility for EUV lithography related development of photomasks, pellicles, optics, and other components requiring EUV exposure. EBL2 consists of a EUV Beam Line, a XPS system, and sample handling infrastructure. Recently we finished installation of the source, exposure chamber, handlers and XPS...

First light and results on EBL2

Recently TNO has established EBL2; an exposure and analysis facility for testing EUV optics, reticles and pellicles under relevant EUV scanner and source conditions. The facility and EUV source complies with the ASML power roadmap of EUV systems up to a power of 500 W IF. This enables life time testing of EUV optics, reticles and pellicles under...

Characterization of EBL2 EUV exposure facility

TNO has built EBL2; a facility for EUV exposure testing and surface analysis. EBL2 is capable of testing EUV optics, EUV photomasks, pellicles, and other components under controlled conditions, relevant to EUV scanner and source operation at all foreseen source power nodes. The system consists of an EUV beam line coupled to an X-ray...

A high-flux low-energy hydrogen ion beam using an end-Hall ion source

Most ion sources that produce high-flux hydrogen ion beams perform best in the high energy range (keV). Alternatively, some plasma sources produce very-lowenergy ions (<< 10 eV). However, in an intermediate energy range of 10-200 eV, no hydrogen ion sources were found that produce high-flux beams. We believe such a source would be of interest to...

EBL2: High power EUV exposure facility

TNO is building EBL2: a laboratory EUV exposure system capable of operating at high broad band EUV powers and intensities, in which XPS analysis of exposed samples is possible without breaking vacuum. Its goal is to accelerate the development and testing of EUV optics and components by providing a publicly accessible exposure and analysis...

EBL2, a flexible, controlled EUV exposure and surface analysis facility

TNO is building EBL2 as a publicly accessible test facility for EUV lithography related development of photomasks, pellicles, optics, and other components. EBL2 will consist of a Beam Line, an XPS system, and sample handling infrastructure. EBL2 will accept a wide range of sample sizes, including EUV masks with or without pellicles. All types of...

EBL2: A flexible and controlled EUV exposure and surface analysis system

A new mask exposure and analysis facility

The introduction of ever higher source powers in EUV systems causes increased risks for contamination and degradation of EUV masks and pellicles. Appropriate testing can help to inventory and mitigate these risks. To this end, we propose EBL2: a laboratory EUV exposure system capable of operating at high EUV powers and intensities, and capable...

Electrostatic clamp manufactured by novel method

Electrostatic clamps (ESCs), used in reticle and wafer handling, are presently manufactured using glass bonding and polishing technologies. We present a patented alternative concept to this process, relying on coating and etching processes rather than bonding. We manufactured a first prototype clamp based on a silicon-on-insulator wafer. The...