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van Heijningen, M. (author), Ribeiro, D.C.A. (author), de Hek, A.P. (author), van Vliet, F.E. (author)This paper discusses the characterization of GaN transistors or MMICs under pulsed high-power stress and their recovery behaviour. A fully calibrated measurement setup is introduced where both forward and reflected waves are measured at input and output. In particular, also the effect of trapping due to the RF pulse on for example the insertion...conference paper 2022
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van der Bent, G. (author), de Hek, A.P. (author), Knight, R.J. (author), van Vliet, F.E. (author)In this article the feasibility and benefits of tacked-FET structures in a state-of-art GaN technology are investigated. Trade-offs between output power, efficiency and stability are made to yield stable, high performance devices. The results of three S-band GaN stacked-FET structures in the UMS GH25-10 technology are given. These structures are...conference paper 2022
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de Hek, A.P. (author), van de Bent, G. (author), van Vliet, F.E. (author)A state-of-the-art, second harmonically tuned, 400 W S-band MMIC power amplifier has been developed. This amplifier delivers in the 2.8 – 3.3 GHz band an output power of 400 W and a PAE between 50-55%. The obtained amplifier performance is the result of the structured design approach discussed in this paper.conference paper 2022
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Essing, J.A.J. (author), Bossuet, A. (author), Knight, R.J. (author), de Hek, A.P. (author), van Vliet, F.E. (author)This paper describes an integrated S-band phaseshifter driver-amplifier to drive Gallium-Nitride (GaN) based power amplifiers in a phased-array radar transmit chain. This phase driver is implemented in a 0.25μm SiGe BiCMOS process and packaged into a QFN5x5. By using device stacking, the phase driver achieves an output power of more than 32.5dBm...conference paper 2021
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van der Bent, G. (author), de Hek, A.P. (author), van Vliet, F.E. (author), Ouarch, A. (author)A 100 W single chip GaN HPA for radar applications is designed, manufactured and measured. This HPA delivers a peak output power of 107 W at a PAE of more than 55 %. The operational equency band of the HPA is from 2.9 GHz to 3.4 GHz. High quality non-linear transistor models and advanced simulations of RF performance, amplifier stability and...conference paper 2020
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van der Bent, G. (author), de Hek, A.P. (author), van Vliet, F.E. (author)The manufacturing of radar front-ends is preferably performed with components that are fully tested and known to be functional. This decreases the chances of instant failure or rapid degradation of the system. Complete testing of the RF-performance of the individual MMICs, however, is not always possible due to technical, infrastructural or...conference paper 2019
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van der Bent, G. (author), de Hek, A.P. (author), van Vliet, F.E. (author)The manufacturing of radar front-ends is preferably performed with components that are fully tested and known to be functional. This decreases the chances of instant failure or rapid degradation of the system. Complete testing of the RF-performance of the individual MMICs, however, is not always possible due to technical, infrastructural or...conference paper 2019
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van der Bent, G. (author), de Hek, A.P. (author), van Vliet, F.E. (author)A small-signal model of a Gallium Nitride (GaN) Field Effect Transistor (FET) is created which consists of a compact linear model of the intrinsic gate fingers and an Electro-Magnetic (EM)-based model of the extrinsic part. Accurate scaling of transistor size is obtained which means that larger transistors than supported by standard (foundry)...conference paper 2018
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van Heijningen, M. (author), de Hek, A.P. (author), Dourlens, C. (author), Fellon, P. (author), Adamiuk, G. (author), Ayllon, N. (author), van Vliet, F.E. (author)This paper presents the design and measurement results of a single-chip front-end monolithic microwave integrated circuit (MMIC), incorporating a high-power amplifier, transmit– receive switch, low-noise amplifier, and calibration coupler,realized in 0.25 μm AlGaN/GaN-on-SiC MMIC technology of UMS (GH25-10). The MMIC is operating in C-band (5.2...article 2017
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- van der Bent, G. (author), de Hek, A.P. (author), van Vliet, F.E. (author) conference paper 2016
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van Heijningen, M. (author), Hoogland, J.A. (author), de Hek, A.P. (author), van Vliet, F.E. (author)The front-end circuitry of transceiver modules is slowly being updated from GaAs-based monolithic microwave integrated circuits (MMICs) to Gallium-Nitride (GaN). Especially GaN power amplifiers and T/R switches, but also low-noise amplifiers (LNAs), offer significant performance improvement over GaAs components. Therefore it is interesting to...article 2015
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van Heijningen, M. (author), Hoogland, J.A. (author), de Hek, A.P. (author), van Vliet, F.E. (author)The front-end circuitry of transceiver modules is slowly being updated from GaAs-based MMICs to Gallium-Nitride. Especially GaN power amplifiers and TR switches, but also low-noise amplifiers, offer significant performance improvement over GaAs components. Therefore it is interesting to also explore the possible advantages of a GaN mixer to...conference paper 2014
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van der Bent, G. (author), de Hek, A.P. (author), van der Graaf, M. (author), van Vliet, F.E. (author)A 50 W S-band High Power Amplifier in the UMS GH25-10 technology is presented. In order to increase the output power per area the size of the transistors is increased beyond the maximum size modelled by the foundry. For this reason the design procedure included the measurements of a transistor and the creation of a scalable Angelov-GaN model...conference paper 2014
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van Wanum, M. (author), de Hek, A.P. (author), van Vliet, F.E. (author)In the UMS GH25-10 GaN MMIC technology a Cband high power amplifier (HPA) has been realized. The current design is primarily intended for use in a space-based SAR system with a center frequency of 5.4 GHz and a sweep bandwidth of 100 MHz. To enable reuse of the amplifier in other radar systems such as weather radar, a large bandwidth is required...conference paper 2013
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van Vliet, F.E. (author), Klumperink, E.A.M. (author), Soer, M.C.M. (author), Garakoui, S.K. (author), de Boer, A. (author), de Hek, A.P. (author), de Heij, W. (author), Nauta, B. (author)Phased-Arrays are increasingly used, and require Silicon implementations to result in affordable multi-beam systems. In this paper, CMOS implementations of two novel analogue beamforming multi-channel receivers will be presented. A narrow-band highly linear system exploiting switches and capacitors in advanced CMOS is presented, implementing a...conference paper 2012
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Brouzes, H. (author), Geurts, S. (author), Besselink, M. (author), Telli, A. (author), de Hek, A.P. (author), van der Bent, G. (author), van Vliet, F.E. (author)A highly integrated high-power transmitter has been designed in a high breakdown GaAs MMIC technology. The transmitter includes, on top of an S-Band 10 W class-F HPA, a DC/DC converter and its associated gate driver, the full voltage regulation control loop, which provides a significant step for phased array transmit chain miniaturization and...conference paper 2012
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van der Bent, G. (author), de Hek, A.P. (author), Geurts, S. (author), Brouzes, H. (author), van Vliet, F.E. (author)An S-band radar transmitter MMIC is reported containing a class-F power amplifier and a switched mode power supply. The integration of the power supply offers the possibility to optimize the power amplifier bias voltage for each individual device in a AESA antenna. This has several advantages such as amplitude tapering with preservation of...conference paper 2012
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Busking, E.B. (author), de Hek, A.P. (author), van Vliet, F.E. (author)A fully integrated 1 GHz buck converter output stage, including on-chip inductor and DC output filtering has been realized, in a standard high-voltage breakdown GaAs MMIC technology. This is a significant step forward in designing highspeed power control of supply-modulated HPAs (high power amplifiers). Agile power controlled HPAs are intended...conference paper 2012
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de Heij, W. (author), de Boer, A. (author), de Hek, A.P. (author), van Vliet, F.E. (author)A Silicon-Germanium single chip receiver has been developed for S-band phased array radars with 2-D digital beamforming. The complete receiver chain from the S-band RF input up to the low-IF output has been integrated on a single SiGe chip. The only external components required to complete the receiver are an RF limiter for protection against...conference paper 2011
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van der Bent, G. (author), de Hek, A.P. (author), Bessemoulin, A. (author), van Vliet, F.E. (author), TNO Defensie en Veiligheid (author)A high power X-band amplifier with an output power over 10 Watts and a Power Added Efficiency (PAE) in excess of 40 percent has been developed. The design was fabricated in a 0.25 μm pHEMT GaAs process (WIN Semiconductor PP25-01). The small die area in combination with a 6-inch wafer technology provides the possibility for low cost production of...conference paper 2009