Asymmetric electron and hole transport in a high-mobility n-type conjugated polymer

Electron- and hole-transport properties of the n-type copolymer poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2, 6-diyl]-alt-5,5′-(2,2′-dithiophene)} [P(NDI2OD-T2), PolyeraActivInk™ N2200] are investigated. Electron- and hole-only devices with Ohmic contacts are demonstrated, exhibiting trap-free space-charge-limited...

IdenTifying the nature of charge recombination in organic solar cells from charge-transfer state electroluminescence

Charge-transfer (CT) state electroluminescence is investigated in several polymer:fullerene bulk heterojunction solar cells. The ideality factor of the electroluminescence reveals that the CT emission in polymer:fullerene solar cells originates from free-carrier bimolecular recombination at the donor-acceptor interface, rather than a charge-trap...

Influence of the isomeric composition of the acceptor on the performance of organic bulk heterojunction P3HT:bis-PCBM solar cells

We synthesized three isomeric subpopulations of bisadduct analogues of [6,6]-phenyl-C61-butyric acid methyl ester (bis-PCBM) via tether-directed control. Bulk heterojunction solar cells prepared using these isomers together with poly(3-hexylthiophene) (P3HT) resulted in an increase of Jsc from 72.4 to 79.6 A m-2, and an improvement in fill...

Hole-enhanced electron injection from ZnO in inverted polymer light-emitting diodes

N-type doping of poly(p-phenylene vinylene) with air-stable dopants

The electron transport in poly(p-phenylene vinylene) (PPV) derivatives blended with the air-stable n-type dopant (4-(1,3-dimethyl-2,3-dihydro-1H- benzoimidazol-2-yl)phenyl)dimethylamine (N-DMBI) is investigated. This dopant is activated after thin film deposition by annealing and strongly enhances the electron transport due to filling of...

Determination of the trap-assisted recombination strength in polymer light emitting diodes

The recombination processes in poly(p -phenylene vinylene) based polymer light-emitting diodes (PLEDs) are investigated. Photogenerated current measurements on PLED device structures reveal that next to the known Langevin recombination also trap-assisted recombination is an important recombination channel in PLEDs, which has not been considered...

The effect of ketone defects on the charge transport and charge recombination in polyfluorenes

The effect of on-chain ketone defects on the charge transport of the polyfluorene derivative poly(9,9-dioctylfluorene) (PFO) is investigated. Using MoO3 as ohmic hole contact, the hole transport in a pristine PFO diode is observed to be limited by space-charge, whereas fluorenone contaminated PFO (PFO-F) is shown to be trap limited by the...

Effect of n-type doping on the hole transport in poly(p-phenylene vinylene)

N-type doping of poly(2-methoxy-5-(2′-ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV) with decamethylcobaltocene (DMC) strongly improves the electron transport due to filling of the electron traps. Unexpectedly, the n-type doping simultaneously suppresses the hole transport in MEH-PPV. We demonstrate that this strong reduction of the hole...

Polymer light-emitting diodes with doped hole-transport layers

We demonstrate a solution processed bi-layer PLED based on poly(p-phenylene vinylene) derivatives using orthogonal solvents. To lower the voltage drop the hole transport layer (HTL) based on poly[2,5-bis(2-ethylhexyloxy)-co-2,5- bis(butoxy)-1,4-phenylenevinylene] (BEH/BB-PPV (1:3)) is doped with tetracyano-tetrafluoro-quinodimethane (F4TCNQ)....