Searched for: author%3A%22Weeber%2C+A.W.%22
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Energieonderzoek Centrum Nederland (author), Weeber, A.W. (author), Koppes, M. (author), Romijn, I.G. (author), Lamers, M.W.P.E. (author), Bennett, I.J. (author), Mewe, A.A. (author)
We obtained 17.6% cell efficiency on 160 ?ѭ and 17.1% on 120 ?ѭ thin multicrystalline silicon screen printed cells of 156 x 156 mm2. These cells are the best from two batches of cells that have been produced using improved processing on ECNs industrial metal-wrap-through (MWT) cell concept. With these batches of cells, four 36-cells modules were...
conference paper 2009
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Energieonderzoek Centrum Nederland (author), Weeber, A.W. (author), Koppes, M. (author), Stassen, A.F. (author), Komatsu, Y. (author), Hoogboom, J. (author), Oosterholt, J. (author), Ritmeijer, S. (author)
Insufficient removal of phosphosilicate glass (PSG) after inline emitter formation for crystalline silicon solar cells is a limiting factor in reaching high efficiencies. With additional cleaning steps, the surface can be modified to increase both short-circuit current and open-circuit voltage without decreasing the fill factor. In this paper we...
conference paper 2009
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Energieonderzoek Centrum Nederland (author), Weeber, A.W. (author), Galbiati, G. (author), Lamers, M.W.P.E. (author), Stassen, A.F. (author), Komatsu, Y. (author), van den Donker, M.N. (author), Harris, M. (author), Venema, P. (author), Meyer, C. (author)
Manipulation of the doping profile of phosphorus emitters in silicon solar cells is demonstrated in an industry-applicable process. By changing the diffusion temperaturetime (T-t) curve without increasing process time, the surface phosphorus concentration has been reduced resulting in an efficiency gain of 0.2% absolute. In addition, batch...
conference paper 2009
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Weeber, A.W. (author), Arnoldbik, W.M. (author), Zeman, M. (author), Romijn, I.G. (author), Verlaan, V. (author), Schropp, R.E.I. (author), Houweling, Z.S. (author), van der Werf, C.H.M. (author), Bakker, R. (author), Dekkers, H.F.W. (author), Borsa, D.M. (author), Verkerk, A.D. (author), Luxembourg, S.L. (author)
Silicon nitride (SiNx) is a material with many applications and can be deposited with various deposition techniques. Series of SiNx films were deposited with HWCVD, RF PECVD,MWPECVD and LF PECVD. The atomic densities are quantified using RBS and ERD. The influence of the atomic densities on the SiN and SiSi bond structure is studied. The density...
article 2009
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Energieonderzoek Centrum Nederland (author), Weeber, A.W. (author), Romijn, I.G. (author), Bende, E.E. (author), Cesar, I. (author)
Currently, photovoltaic-cell manufacturers are tending to use thinner wafers in order to reduce material costs. However, thin wafers that have a full aluminum (Al) rear coverage suffer from bowing and therefore have an increased chance of breakage. Another consequence of the thinner wafer is that the surface recombination velocity (SRV) of the...
conference paper 2008
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Energieonderzoek Centrum Nederland (author), van der Borg, N.J.C.M. (author), Weeber, A.W. (author), Romijn, I.G. (author), Galbiati, G. (author), Bende, E.E. (author), Cesar, I. (author), Borsa, D.M. (author)
In search of methods that allow processing of thinner multi-crystalline silicon solar cells (<<200?ѭ) without bowing, an open rear side concept, the PASHA cell (Passivated on All Sides H-patterned cell), was developed in our laboratories based on an H-patterned rear metallization design combined with a industrial silicon nitride...
conference paper 2008
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Energieonderzoek Centrum Nederland (author), Weeber, A.W. (author), Kossen, E.J. (author), Romijn, I.G. (author), Lamers, M.W.P.E. (author), Mewe, A.A. (author), Bende, E.E. (author)
At ECN, we are developing several different cell concepts to reduce the €/Wp costs of crystalline silicon solar cells by increasing the efficiency on thin and large solar cells. Our metallization wrap through (MWT) concept PUM reduces the shading losses from the front side by 3%, which results in a gain in Jsc. Furthermore, the cells are fully...
conference paper 2008
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Energieonderzoek Centrum Nederland (author), Tool, C.J.J. (author), Weeber, A.W. (author), Romijn, I.G. (author), Lamers, M.W.P.E. (author), Gagliardo, M. (author), van de. Donker, M.N. (author)
Standard in industrial in-line emitter processing is to apply an excess phosphorus source on the wafer prior to diffusion. Subsequently, a constant and high phosphorus concentration is present on the surface during the diffusion process. This paper shows that a reduction in the concentration, and thus in the emitter, can give a significant gain...
conference paper 2008
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Energieonderzoek Centrum Nederland (author), Weeber, A.W. (author), Geerligs, L.J. (author), Mihailetchi, V.D. (author), Oosterling - Saynova, D.S. (author)
A low-cost, high-efficiency process on large area n-type base silicon cells is reported which is based on a screen printed aluminium-alloyed rear junction concept and phosphorus-diffused front surface field. The cell process uses fabrication techniques which are very close to the current industry-standard screen-printed mc-Si cell process for p...
conference paper 2008
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Energieonderzoek Centrum Nederland (author), Weeber, A.W. (author), Romijn, I.G. (author), Mewe, A.A. (author), van den Donker, M.N. (author), Wijnen, P. (author), van Eijk, P. (author), Kerp, H. (author), Shaikh, A. (author)
In this paper we present an alternative to our metal-wrap-through PUM߿ݠmetallization concept that simplifies the cell process and thereby reduces manufacturing costs. The simplified printing step allows complete filling of the holes with a specially designed conductive paste. With this plug߿ݠconcept of closed PUM holes we achieved a feasible,...
conference paper 2008
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Energieonderzoek Centrum Nederland (author), Weeber, A.W. (author), Geerligs, L.J. (author), Mihailetchi, V.D. (author), Oosterling - Saynova, D.S. (author)
Low-cost, high-efficiency, and large area n-type silicon cells can be processed based on the screen printed Aluminum-alloyed rear junction concept. This process uses fabrication techniques which are very close to the current industry-standard screen printed mc-Si cell process. We compare, by experimental tests and modeling, the differences of...
conference paper 2007
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Energieonderzoek Centrum Nederland (author), Hoornstra, J. (author), Tool, C.J.J. (author), Weeber, A.W. (author), Lamers, M.W.P.E. (author), va. Strien, W.J. (author)
n.v.t.
conference paper 2007
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Energieonderzoek Centrum Nederland (author), Weeber, A.W. (author), Kossen, E.J. (author), Koppes, M. (author), Romijn, I.G. (author), Cesar, I. (author)
"To maintain high efficiencies for solar cells and reduce the cell bowing, the full Al rear surface of thin conventional solar cells has to be replaced by a more suitable passivating rear surface layer. In our new PASHA-cell (Passivated on All Sides H-patterned cell) we apply a single silicon-nitride (SiNx:H) layer for rear surface passivation...
conference paper 2007
document
Energieonderzoek Centrum Nederland (author), Weeber, A.W. (author), Kossen, E.J. (author), Koppes, M. (author), Romijn, I.G. (author), Lamers, M.W.P.E. (author), Stassen, A.F. (author), Mewe, A.A. (author)
n.v.t.
conference paper 2007
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Energieonderzoek Centrum Nederland (author), Weeber, A.W. (author), Romijn, I.G. (author), Verlaan, V. (author), Goldbach, H.D. (author), Schropp, R.E.I. (author), Houweling, Z.S. (author), van der Werf, C.H.M. (author), Mai, Y (author), Bakker, R. (author)
Hot-wire chemical vapor deposition (HWCVD) is a promising technique for very fast deposition of high quality thin films. We investigated silicon nitride (SiNx) deposited with HWCVD as passivating antireflection coating (ARC) at a high deposition rate of 180 nm/min. Series of multi-crystalline silicon (mc-Si) solar cells were made using HWCVD...
conference paper 2007
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Energieonderzoek Centrum Nederland (author), Weeber, A.W. (author), Romijn, I.G. (author), Chen, F. (author), Tan, J. (author), Hallam, B. (author), Cotter, J. (author)
The relationship between film composition and surface passivation provided by PECVD silicon nitride is investigated in this work. Various surface types and planes of n-type float zoned wafers were studied: planar (100), planar (111), textured (random upright pyramids with (111) facets), boron-diffused layer on planar (100) surfaces, and the...
conference paper 2007
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Energieonderzoek Centrum Nederland (author), Weeber, A.W. (author), van der Werf, C.H.M. (author), Romijn, I.G. (author), Verlaan, V. (author), Goldbach, H.D. (author), Schropp, R.E.I. (author), Houweling, Z.S. (author)
n.v.t.
conference paper 2007
document
Energieonderzoek Centrum Nederland (author), Weeber, A.W. (author), Geerligs, L.J. (author), Mihailetchi, V.D. (author)
n.v.t.
conference paper 2007
document
Weeber, A.W. (author), Romijn, I.G. (author), Verlaan, V. (author), Goldbach, H.D. (author), Houweling, Z.S. (author), van der Werf, C.H.M. (author), Dekkers, H.F.W. (author)
Hot-wire chemical vapor deposition (HWCVD) is a promising technique for very fast deposition of high quality thin films. We developed processing conditions for devicequality silicon nitride (a-SiNx:H) anti-reflection coating (ARC) at high deposition rates of 3 nm/s. The HWCVD SiNx layers were deposited on multicrystalline silicon (mc-Si) solar...
article 2007
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Weeber, A.W. (author), Romijn, I.G. (author), Verlaan, V. (author), Goldbach, H.D. (author), Schropp, R.E.I. (author), Houweling, Z.S. (author), van de. Werf, C.H.M. (author)
The application of hot-wire (HW) CVD deposited silicon nitride (SiNx) as passivating anti-reflection coating on multicrystalline silicon (mc-Si) solar cells is investigated. The highest efficiency reached is 15.7% for SiNx layers with a N/Si ratio of 1.20 and a high mass density of 2.9 g/cm3. These cell efficiencies are comparable to the...
article 2007
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