Searched for: author%3A%22Vicca%2C+P.%22
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Malinowski, P.E. (author), Ke, T. (author), Nakamura, A. (author), Vicca, P. (author), Kronemeijer, A.J. (author), Ameys, M. (author), van der Steen, J.L. (author), Steudel, S. (author), Kamochi, Y. (author), Iwai, Y. (author), Gelinck, G. (author), Heremans, P. (author)
This paper describes the potential of hi-res display fabrication using OLED photolithography. We demonstrate 1250 ppi multicolor arrays, pixel scaling down to 3 μm pitch, integration in active displays, and improving lifetime after patterning (200 hours T75, smOLEDs). Photolithography can enable low-cost, high resolution displays for the 8K – VR...
conference paper 2017
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Nag, M. (author), Bhoolokam, A. (author), Smout, S. (author), Willegems, M. (author), Muller, R. (author), Myny, K. (author), Schols, S. (author), Ameys, M. (author), Genoe, J. (author), Ke, T.H. (author), Vicca, P. (author), Ellis, T. (author), Cobb, B. (author), Kumar, A. (author), van der Steen, J.L.P.J. (author), Gelinck, G. (author), Fukui, Y. (author), Obata, K. (author), Groeseneken, G. (author), Heremans, P. (author), Steudel, S. (author)
A process to make self-aligned top-gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) on polyimide foil is presented. The source/drain (S/D) region's parasitic resistance reduced during the SiN interlayer deposition step. The sheet resistivity of S/D region after exposure to SiN interlayer deposition decreased to 1.5...
article 2015
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Steudel, S. (author), Cobb, B. (author), Nag, M. (author), Obata, K. (author), Murata, K.M. (author), Schols, S. (author), Vicca, P. (author), Ke, T.H. (author), Smout, S. (author), Willegems, M. (author), Ameys, M. (author), Bhoolakam, A. (author), Kumar, A. (author), Kumar, A. (author), van der Steen, J.L. (author), Genoe, J. (author), Gelinck, G.H. (author), Heremans, P.L. (author)
We present a QVGA (320x240 with 3 sub-pixel) top-emitting AMOLED display with 250ppi resolution using a self-aligned (SA) IGZO TFT backplane on polyimide-foil with full barrier. The back plane process flow is based on a 7 layer photolithography process. The aperture ratio of the top-emitting OLEDs is approx. 80%. An integrated gate driver is...
article 2015
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Nag, M. (author), Rockele, M. (author), Steudel, S. (author), Chasin, A. (author), Myny, K. (author), Bhoolokam, A. (author), Willegems, M. (author), Smout, S. (author), Vicca, P. (author), Ameys, M. (author), Ke, T.H. (author), Schols, S. (author), Genoe, J. (author), van der Steen, J.L.P.J. (author), Groeseneken, G. (author), Heremans, P. (author)
In this study, we report high-quality amorphous indiunrv-galiium-zinc-oxide (a-IGZO) thinfilm transistors (TFTs) fabricated on a polyethylene naphthalate foil using a new back-channel-etch (BCE) process flow. The BCE flow allows a better scalability of TFTs for high-resolution backplanes and related circuits. The maximum processing temperature...
article 2014
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Malinowski, P.E. (author), Vicca, P. (author), Willegems, M. (author), Schols, S. (author), Cheyns, D. (author), Smout, S. (author), Ameys, M. (author), Myny, K. (author), Vaidyanathan, S. (author), Martin, E. (author), Kumar, A. (author), van der Steen, J.L. (author), Gelinck, G.H. (author), Heremans, P. (author)
We report on the fabrication of imagers based on organic semiconductors both in the photodiode layer and in the readout backplane. The photodiode is based on evaporated ultrathin (<100 nm) stack of SubPc/C60, sensitive in the wavelength range between 300 and 650 nm. The readout circuit is a switch matrix fabricated with a solution processed...
article 2014
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Cobb, B. (author), Rodriguez, F.G. (author), Maas, J. (author), Ellis, T. (author), van der Steen, J.L. (author), Myny, K. (author), Smout, S. (author), Vicca, P. (author), Bhoolokam, A. (author), Rockelé, M. (author), Steudel, S. (author), Heremans, P. (author), Marinkovic, M. (author), Pham, D.V. (author), Hoppe, A. (author), Steiger, J. (author), Anselman, R. (author), Gelinck, G.H. (author)
AMOLED backplanes were fabricated on both rigid glass and flexible plastic substrates using a solution processed oxide semiconductor processed at temperatures <250C with mobilities greater than 2 cm2/Vs. The backplanes were integrated onto a thin film moisture barrier and QQVGA AMOLED displays were successfully fabricated. cop. 2014 Society for...
article 2014
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Nag, M. (author), Obata, K. (author), Fukui, Y. (author), Myny, K. (author), Schols, S. (author), Vicca, P. (author), Ke, T.H. (author), Smout, S. (author), Willegems, M. (author), Ameys, M. (author), Bhoolokam, A. (author), Muller, R. (author), Cobb, B. (author), Kumar, A. (author), van der Steen, J.L. (author), Ellis, T. (author), Gelinck, G.H. (author), Genoe, J. (author), Heremans, P. (author), Steudel, S. (author)
We present a QQVGA (160times120 with 3 sub-pixel) top-emitting AMOLED display with 85ppi resolution using a self-aligned (SA) IGZO TFT backplane on polyimide-foil. The back plane process flow is based on a 5 layer photolithography process. The aperture ratio of the top-emitting OLEDs is approx. 25%. For operation at 6 V supply voltage (VDD), the...
article 2014
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van der Steen, J.L.P.J. (author), Tripathi, A.K. (author), Maas, J.P.V. (author), van Diesen-Tempelaars, K. (author), van Leuken, L.B. (author), de Haas, G.J.A.J.F. (author), van der Putten, J.B.P.H. (author), Yakimets, I. (author), Li, F.M.W. (author), Ellis, T.H. (author), van Mol, A.M.B. (author), Gelinck, G.H. (author), Vicca, P. (author), Smout, S. (author), Ameys, M. (author), Huei Ke, T. (author), Steudel, S. (author), Nag, M. (author), Schols, S. (author), Genoe, J. (author), Heremans, P. (author), Fukui, Y. (author), Green, S. (author)
We present a low-temperature metal oxide transistor backplane technology using PECVD dielectrics. We show successful integration of the backplane in flexible 200ppi AMOLED displays on ultrathin polymer films. The displays are encapsulated with a thin-film barrier and the total stack thickness is less than 150μm.
conference paper 2013
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Steudel, S. (author), Myny, K. (author), Schols, S. (author), Vicca, P. (author), Smout, S. (author), Tripathi, A.K. (author), van der Putten, B. (author), van der Steen, J.L. (author), van Neer, M. (author), Schütze, F. (author), Hild, O.R. (author), van Veenendaal, E. (author), van Lieshout, P. (author), van Mil, M. (author), Genoe, J. (author), Gelinck, G.H. (author), Heremans, P. (author)
article 2012
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Tripathi, A.K. (author), van der Putten, B. (author), van der Steen, J.L. (author), Tempelaars, K. (author), Cobb, B. (author), Ameys, M. (author), Ke, T.H. (author), Myny, K. (author), Steudel, S. (author), Nag, M. (author), Schols, S. (author), Vicca, P. (author), Smout, S. (author), Genoe, J. (author), Heremans, P. (author), Yakimets, I. (author), Gelinck, G.H. (author)
We present a top emitting monochrome AMOLED display with 85dpi resolution using an amorphous Indium-Gallium-Zinc-Oxide (IGZO) TFT backplane on PEN-foil. Maximum processing temperature was limited to 150 °C in order to ensure an overlay accuracy < 3μm on PEN foil. The backplane process flow is based on a 7 mask photolithography process that...
conference paper 2012
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Myny, K. (author), Marien, H. (author), Steudel, S. (author), Vicca, P. (author), Beenhakkers, M.J. (author), van Aerle, N.A.J.M. (author), Gelinck, G.H. (author), Genoe, J. (author), Dehaene, W. (author), Steyaert, M. (author), Heremans, P. (author), Cantatore, E. (author)
bookPart 2012
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Tripathi, A.K. (author), Smits, E.C.P. (author), van der Putten, J.B.P.H. (author), van Neer, M. (author), Myny, K. (author), Nag, M. (author), Steudel, S. (author), Vicca, P. (author), O'Neill, K. (author), van Veenendaal, E. (author), Genoe, J. (author), Heremans, P. (author), Gelinck, G.H. (author)
article 2011
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Tripathi, A.K. (author), Smits, E.C.P. (author), van der Putten, J.B.P.H. (author), van Neer, M. (author), Myny, K. (author), Nag, M. (author), Steudel, S. (author), Vicca, P. (author), O'Neill, K. (author), van Veenendaal, E. (author), Genoe, G. (author), Heremans, P. (author), Gelinck, G.H. (author)
In this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 µm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm2 /V s. The technology is demonstrated with circuit...
article 2011
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Myny, K. (author), Steudel, S. (author), Vicca, P. (author), Smout, S. (author), Beenhakkers, M.J. (author), van Aerle, N.A.J.M. (author), Furthner, F. (author), van der Putten, B. (author), Tripathi, A.K. (author), Gelinck, G.H. (author), Genoe, J. (author), Dehaene, W. (author), Heremans, P.L. (author)
In this chapter, fully integrated organic RFID tags are demonstrated. These tags are inductively-coupled at a base frequency of 13.56 MHz and can be read out at distances up to 10 cm, which is the expected readout distance for proximity readers. We also demonstrate next generation transponder chips, fabricated in a dual-gate technology. The...
conference paper 2011
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Steudel, S. (author), Myny, K. (author), Schols, S. (author), Vicca, P. (author), Smout, S. (author), Tripathi, A.K. (author), van der Putten, J.B.P.H. (author), van der Steen, J.L. (author), van Neer, M.K.P. (author), Schütze, F. (author), Hild, O.R. (author), van Veenendaal, E. (author), van Mil, M. (author), Genoe, J. (author), Gelinck, G.H. (author), Heremans, P. (author)
We present a QQVGA top emitting monochrome AMOLED display with 85dpi resolution using an organic TFT backplane on low temperature PEN-foil. The back plane process flow is based on a 7 layer photolithography process that yields a final mobility of the OTFT of ∼0.4cm2/Vs. The aperture ratio of the top-emitting OLEDs is over 75%. For operation at...
conference paper 2011
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Marien, H. (author), Steyaert, M. (author), Steudel, S. (author), Vicca, P. (author), Smout, S. (author), Gelinck, G.H. (author), Heremans, P.L. (author), TNO Industrie en Techniek (author)
In this paper a fully integrated organic DC-DC upconverter is presented in a pentacene p-type only technology. This 3-stage Dickson converter reaches a voltage conversion factor of 3 for a purely capacitive load and 2.5 for a 10 μA load current. The maximal output voltage goes up to 75 V and the Dickson core efficiency is 48 %. The clock signal...
conference paper 2010
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Genoe, J. (author), Myny, K. (author), Steudel, S. (author), Smaut, S. (author), Vicca, P. (author), van der Putten, B. (author), Tripathi, A.K. (author), van Aerie, N.A.J.M. (author), Gelinck, G.H. (author), Dehaene, W. (author), Heremans, P. (author), TNO Industrie en Techniek (author)
Last year, advances in organic device technology (such as device scaling, high K-dielectrics [1], ... ) enabled a substantial progress in performance. This resulted in an increase in the data rate of plastic transponder circuits from about 2 kbit/s [21 to EPC-compatible speeds (SO kbit/s). The organic semiconductor pentacene deposited from...
conference paper 2010
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Myny, K. (author), Steudel, S. (author), Smout, S. (author), Vicca, P. (author), Furthner, F. (author), van der Putten, B. (author), Tripathi, A.K. (author), Gelinck, G.H. (author), Genoe, J. (author), Dehaene, W. (author), Heremans, P. (author), Imec, Kapeldreef 75, 3001 Leuven, Belgium Katholieke Hogeschool Limburg, 3590 Diepenbeek, Belgium Katholieke Universiteit Leuven, 3001 Leuven, Belgium TNO-Holst Centre, High-Tech Campus 31, P.O. Box 8550, 5605KN Eindhoven, Netherlands (author)
Data rates of plastic transponder chips have been limited to a few kHz, limited by the inherent low mobility of organic semiconductors. However, a target application for plastic RFID tags is Electronic Product Coding (EPC), which will require, at a base carrier frequency fc = 13.56 MHz, a data rate of fc/512 = 52.969 kb/s. In this work, we show...
article 2010
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Bode, D. (author), Myny, K. (author), Verreet, B. (author), van der Putten, J.B.P.H. (author), Bakalov, P. (author), Steudel, S. (author), Smout, S. (author), Vicca, P. (author), Genoe, J. (author), Heremans, P.L. (author), TNO Industrie en Techniek (author)
Recently, complex circuits of organic thin-film transistors have been shown. The use of complementary logic can significantly ease the design of large integrated circuits. However, the performance of complementary logic in organic thin-film technology has not been able to equivale that of unipolar logic, due to the difficulty to densely...
article 2010
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Myny, K. (author), Steudel, S. (author), Vicca, P. (author), Smout, S. (author), Beenhakkers, M.J. (author), van Aerle, N.A.J.M. (author), Furthner, F. (author), van der Putten, B. (author), Tripathi, A.K. (author), Gelinck, G.H. (author), Genoe, J. (author), Dehaene, W. (author), Heremans, P. (author), TNO Industrie en Techniek (author)
A target application for plastic RFID tags is Electronic Product Coding (EPC). The EPC-specifications set some demanding requirements for RFID tags. In this work, we review the work that has been done to fulfill some of these specifications. We describe a complete 64-bit RFID tag that is inductively-coupled at a base carrier frequency of 13.56...
conference paper 2010
Searched for: author%3A%22Vicca%2C+P.%22
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