Pages
- 1
- 2
- document
-
Heremans, P. (author), Tripathi, A.K. (author), de Jamblinne de Meux, A. (author), Smits, E.C.P. (author), Hou, B. (author), Pourtois, G. (author), Gelinck, G.H. (author)The increasing interest in fl exible electronics and fl exible displays raises questions regarding the inherent mechanical properties of the electronic materials used. Here, the mechanical behavior of thin-fi lm transistors used in activematrix displays is considered. The change of electrical performance of thinfilm semiconductor materials under...article 2016
- document
-
Tripathi, A.K. (author), Myny, K. (author), Hou, B. (author), Wezenberg, K. (author), Gelinck, G.H. (author)In this paper, we present the fabrication and characterization of highly flexible indium-gallium-zinc-oxide (IGZO)-based thin-film transistors (TFTs) and integrated circuits on a transparent and thin polymer substrate. Mechanical reliability tests are performed under bending conditions down to a bending radius of 2 mm. All the TFT parameters...article 2015
- document
-
Myny, K. (author), Cobb, B. (author), van der Steen, J.L. (author), Tripathi, A.K. (author), Genoe, J. (author), Gelinck, G. (author), Heremans, P. (author)Our goal is to create thin low-cost flexible NFC tags to allow everyday objects to communicate to smartphones and computers and thus participate in the Internet of Things. We employ amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor circuits processed at low temperatures, less than 250C, directly on thin polyester substrates....conference paper 2015
- document
-
Myny, K. (author), Tripathi, A.K. (author), van der Steen, J.L. (author), Cobb, B. (author)Thin-film transistor technologies have great potential to become the key technology for leafnode Internet of Things by utilizing the NFC protocol as a communication medium. The main requirements are manufacturability on flexible substrates at a low cost while maintaining good device performance characteristics, necessary to be compatible with...article 2015
- document
-
Li, F. (author), Smits, E. (author), van Leuken, L. (author), Haas, D.G. (author), Ellis, T. (author), van der Steen, J.L. (author), Tripathi, A.K. (author), Myny, K. (author), Ameys, M. (author), Schols, S. (author), Heremans, P. (author), Gelinck, G.H. (author)AMOLED displays using oxide TFTs and high-quality moisture barrier were fabricated on ultrathin, flexible plastic substrates to give maximum mechanical flexibility. Total display thickness is below 150μm, and repeated rollability at 1 cm roll radius has been demonstrated. Electrical/Mechanical characteristics and reliability of the flexible...article 2014
- document
-
Gelinck, G.H. (author), van der Steen, J.L. (author), Tripathi, A.K. (author), Ellis, T. (author), Akkerman, H. (author), van Leuken, L. (author), Li, F. (author), Maas, J. (author), Smits, E. (author), Rovers, M. (author), Nag, M. (author), Myny, K. (author), Malinowski, P. (author), Ameys, M. (author), Ke, T.H. (author), Schols, S. (author), Steudel, S. (author), Genoe, J. (author), Heremans, P. (author)In this paper, we present some of the technology challenges and process temperature trade-offs when realizing AM OLED displays on thin flexible plastic films that can be mechanically bent to a roll radius of ∼1 cm. We furthermore present complementary approaches to realize low-power, high resolution OLED displays using self-aligned IGZO TFT...conference paper 2014
- document
-
Kumar, A. (author), Moet, D. (author), van der Steen, J.L. (author), Tripathi, A.K. (author), Rodriguez, F.G. (author), Maas, J. (author), Simon, M. (author), Reutten, W. (author), Douglas, A. (author), Raaijmakers, R. (author), Malinowski, P.E. (author), Myny, K. (author), Shafique, U. (author), Andriessen, R. (author), Heremans, P. (author), Gelinck, G.H. (author)We demonstrate organic imaging sensor arrays fabricated on flexible plastic foil with the solution processing route for both photodiodes and thin film transistors. We used the photovoltaic P3HT:PCBM blend for fabricating the photodiodes using spin coating and pentacene as semiconductor material for the TFTs. Photodiodes fabricated with P3HT:PCBM...conference paper 2014
- document
-
Fukui, Y. (author), Shibata, M. (author), Tanaka, Y. (author), Okumoto, K. (author), Morita, K. (author), Otake, K. (author), Tripathi, A.K. (author), van der Putten, B. (author), van der Steen, J.L. (author), Tempelaars, K. (author), van Leuken, L. (author), Li, F. (author), Yakimets, I. (author), Gelinck, G.H. (author), Myny, K. (author), Smout, S. (author), Willegems, M. (author), Schols, S. (author), Steudel, S. (author), Genoe, J. (author), Heremans, P. (author)We have developed a full color flexible top-emission AMOLED display with 80 ppi resolution using In-Ga-Zn-O TFT backplane on PEN foil under the maximum process temperature of 150 oC. Notwithstanding the low processing temperature, the TFTs with SiOx passivation layer show high reliability with VTH shift of less than 0.2 V at 10,000 seconds under...article 2013
- document
-
van der Steen, J.L.P.J. (author), Tripathi, A.K. (author), Maas, J.P.V. (author), van Diesen-Tempelaars, K. (author), van Leuken, L.B. (author), de Haas, G.J.A.J.F. (author), van der Putten, J.B.P.H. (author), Yakimets, I. (author), Li, F.M.W. (author), Ellis, T.H. (author), van Mol, A.M.B. (author), Gelinck, G.H. (author), Vicca, P. (author), Smout, S. (author), Ameys, M. (author), Huei Ke, T. (author), Steudel, S. (author), Nag, M. (author), Schols, S. (author), Genoe, J. (author), Heremans, P. (author), Fukui, Y. (author), Green, S. (author)We present a low-temperature metal oxide transistor backplane technology using PECVD dielectrics. We show successful integration of the backplane in flexible 200ppi AMOLED displays on ultrathin polymer films. The displays are encapsulated with a thin-film barrier and the total stack thickness is less than 150μm.conference paper 2013
- document
- Steudel, S. (author), Myny, K. (author), Schols, S. (author), Vicca, P. (author), Smout, S. (author), Tripathi, A.K. (author), van der Putten, B. (author), van der Steen, J.L. (author), van Neer, M. (author), Schütze, F. (author), Hild, O.R. (author), van Veenendaal, E. (author), van Lieshout, P. (author), van Mil, M. (author), Genoe, J. (author), Gelinck, G.H. (author), Heremans, P. (author) article 2012
- document
- Smaal, W. (author), Kjellander, C. (author), Jeong, Y. (author), Tripathi, A.K. (author), van der Putten, B. (author), Facchetti, A. (author), Yan, H. (author), Quinn, J. (author), Anthony, J. (author), Myny, K. (author), Dehaene, W. (author), Gelinck, G.H. (author) article 2012
- document
-
Tripathi, A.K. (author), van der Putten, B. (author), van der Steen, J.L. (author), Tempelaars, K. (author), Cobb, B. (author), Ameys, M. (author), Ke, T.H. (author), Myny, K. (author), Steudel, S. (author), Nag, M. (author), Schols, S. (author), Vicca, P. (author), Smout, S. (author), Genoe, J. (author), Heremans, P. (author), Yakimets, I. (author), Gelinck, G.H. (author)We present a top emitting monochrome AMOLED display with 85dpi resolution using an amorphous Indium-Gallium-Zinc-Oxide (IGZO) TFT backplane on PEN-foil. Maximum processing temperature was limited to 150 °C in order to ensure an overlay accuracy < 3μm on PEN foil. The backplane process flow is based on a 7 mask photolithography process that...conference paper 2012
- document
-
Raiteri, D. (author), Torricelli, F. (author), Myny, K. (author), Nag, M. (author), van der Putten, B. (author), Smits, E. (author), Steudel, S. (author), Tempelaars, K. (author), Tripathi, A.K. (author), Gelinck, G.H. (author), van Roermund, A. (author), Cantatore, E. (author)Amorphous Gallium-Indium-Zinc-Oxide (GIZO or IGZO) has been recently proposed [1] as an interesting semiconductor for manufacturing TFTs because of its mobility (μ∼20cm 2/Vs), superior to other common materials for large-area electronics like organic semiconductors and a-Si (μ∼1cm 2/Vs). The amorphous nature of GIZO grants also a good uniformity...conference paper 2012
- document
-
Germs, W.C. (author), Adriaans, W.H. (author), Tripathi, A.K. (author), Roelofs, W.S.C. (author), Cobb, B. (author), Janssen, R.A.J. (author), Gelinck, G.H. (author), Kemerink, M. (author)We investigate the mechanism of charge transport in indium gallium zinc oxide (a-IGZO), an amorphous metal-oxide semiconductor. We measured the field-effect mobility and the Seebeck coefficient (S=ΔV/ΔT) of a-IGZO in thin-film transistors as a function of charge-carrier density for different temperatures. Using these transistors, we further...article 2012
- document
-
Tripathi, A.K. (author), Smits, E.C.P. (author), Loth, M. (author), Anthony, J.E. (author), Gelinck, G.H. (author)Dual gate organic thin film transistors based on solution processable fluorinated 5,11 bis(triethylsilylethynyl) anthradithiophene semiconductor were fabricated. Top (Teflon, εr =2.1) and bottom (SiO2, εr =3.9) gate dielectrics with different dielectric constants were chosen. Top gate mobilities >1 cm2 /Vs and bottom gate mobilities >0.1 cm2/V s...article 2011
- document
- Tripathi, A.K. (author), Smits, E.C.P. (author), van der Putten, J.B.P.H. (author), van Neer, M. (author), Myny, K. (author), Nag, M. (author), Steudel, S. (author), Vicca, P. (author), O'Neill, K. (author), van Veenendaal, E. (author), Genoe, J. (author), Heremans, P. (author), Gelinck, G.H. (author) article 2011
- document
-
Torricelli, F. (author), Meijboom, J.R. (author), Smits, E. (author), Tripathi, A.K. (author), Gelinck, G.H. (author), Colalongo, L. (author), Kovacs-Vajna, Z.M. (author), de Leeuw, D. (author), Cantatore, E. (author)Abstract—Short-channel zinc oxide (ZnO) thin-film transistors (TFTs) are investigated in a wide range of temperatures and bias conditions. Scaling down the channel length, the TFT performance is seriously affected by contact resistances, which depend on gate voltage and temperature. To account for the contact resistances, the transistor is...article 2011
- document
-
Tripathi, A.K. (author), Smits, E.C.P. (author), van der Putten, J.B.P.H. (author), van Neer, M. (author), Myny, K. (author), Nag, M. (author), Steudel, S. (author), Vicca, P. (author), O'Neill, K. (author), van Veenendaal, E. (author), Genoe, G. (author), Heremans, P. (author), Gelinck, G.H. (author)In this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 µm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm2 /V s. The technology is demonstrated with circuit...article 2011
- document
-
Tripathi, A.K. (author), van Breemen, A.J.J.M. (author), Shen, J. (author), Gao, Q. (author), Ivan, M.G. (author), Reimann, K. (author), Meinders, E.R. (author), Gelinck, G.H. (author)Multibit memory devices based on the ferroelectric copolymer P(VDF-TrFE) (poly-(vinylidenefluoride-trifluoroethylene)) are presented. Multilevel microstructures are fabricated by thermal imprinting of spin-coated ferroelectric polymer film using a rigid Si template. Multibit storage in capacitors and thin-film transistor memory is realized by...article 2011
- document
-
Torricelli, F. (author), Meijboom, J.R. (author), Smits, E. (author), Tripathi, A.K. (author), Ferroni, M. (author), Federici, S. (author), Gelinck, G.H. (author), Colalongo, L. (author), Kovacs-Vajna, Z.M. (author), de Leeuw, D. (author), Cantatore, E. (author)Thin-film transistors (TFTs), which use zinc oxide (ZnO) as an active layer, were fabricated and investigated in detail. The transport properties of ZnO deposited by spray pyrolysis (SP) on a TFT structure are studied in a wide range of temperatures, electrical conditions (i.e., subthreshold, above-threshold linear, and saturation regions), and...article 2011
Pages
- 1
- 2