Searched for: author%3A%22Torricelli%2C+F.%22
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Ghittorelli, M. (author), Torricelli, F. (author), Garripoli, C. (author), van der Steen, J.L.J.P. (author), Gelinck, G.H. (author), Abdinia, S. (author), Cantatore, E. (author), Kovacs-Vajna, Z.M. (author)
conference paper 2017
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Yoo, H. (author), Ghittorelli, M. (author), Lee, D.K. (author), Smits, E.C.P. (author), Gelinck, G.H. (author), Ahn, H. (author), Lee, H.K. (author), Torricelli, F. (author), Kim, J.J. (author)
Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film transistors with balanced characteristics. Recent...
article 2017
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Torricelli, F. (author), Ghittorelli, M. (author), Smits, E.C.P. (author), Roelofs, C.W.S. (author), Janssen, R.A.J. (author), Gelinck, G.H. (author), Kovács-Vajna, Z.M. (author), Cantatore, E. (author)
Ambipolar transistors typically suffer from large off-current inherently due to ambipolar conduction. Using a tri-gate transistor it is shown that it is possible to electrostatically switch ambipolar polymer transistors from ambipolar to unipolar mode. In unipolar mode, symmetric characteristics with an on/off current ratio of larger than 105...
article 2016
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Ghittorelli, M. (author), Torricelli, F. (author), van der Steen, J.L. (author), Garripoli, C. (author), Tripathi, A. (author), Gelinck, G.H. (author), Cantatore, E. (author), Kovacs-Vajna, Z.M. (author)
Here we show a new physical-based analytical model of a-IGZO TFTs. TFTs scaling from L=200 μm to L=15 μm and fabricated on plastic foil are accurately reproduced with a unique set of parameters. The model is used to design a zero-VGS inverter. It is a valuable tool for circuit design and technology characterization. cop. 2015 IEEE.
conference paper 2016
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Yoo, H. (author), Ghittorelli, M. (author), Smits, E.C.P. (author), Gelinck, G.H. (author), Lee, H.K. (author), Torricelli, F. (author), Kim, J.J. (author)
Ambipolar organic electronics offer great potential for simple and low-cost fabrication of complementary logic circuits on large-area and mechanically flexible substrates. Ambipolar transistors are ideal candidates for the simple and low-cost development of complementary logic circuits since they can operate as n-type and p-type transistors....
article 2016
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Brondijk, J.J. (author), Torricelli, F. (author), Smits, E.C.P. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
The charge injection barriers in organic field-effect transistors (OFETs) seem to be far less critical as compared to organic light-emitting diodes (OLEDs). Counter intuitively, we show that the origin is image-force lowering of the barrier due to the gate bias at the source contact, although the corresponding gate field is perpendicular to the...
article 2012
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Brondijk, J.J. (author), Spijkman, M. (author), Torricelli, F. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
The charge carrier distribution in dual-gate field-effect transistors is investigated as a function of semiconductor thickness. A good agreement with 2-dimensional numerically calculated transfer curves is obtained. For semiconductor thicknesses larger than the accumulation width, two spatially separated channels are formed. The cross-over from...
article 2012
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Raiteri, D. (author), Torricelli, F. (author), Myny, K. (author), Nag, M. (author), van der Putten, B. (author), Smits, E. (author), Steudel, S. (author), Tempelaars, K. (author), Tripathi, A.K. (author), Gelinck, G.H. (author), van Roermund, A. (author), Cantatore, E. (author)
Amorphous Gallium-Indium-Zinc-Oxide (GIZO or IGZO) has been recently proposed [1] as an interesting semiconductor for manufacturing TFTs because of its mobility (μ∼20cm 2/Vs), superior to other common materials for large-area electronics like organic semiconductors and a-Si (μ∼1cm 2/Vs). The amorphous nature of GIZO grants also a good uniformity...
conference paper 2012
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Torricelli, F. (author), Meijboom, J.R. (author), Smits, E. (author), Tripathi, A.K. (author), Gelinck, G.H. (author), Colalongo, L. (author), Kovacs-Vajna, Z.M. (author), de Leeuw, D. (author), Cantatore, E. (author)
Abstract—Short-channel zinc oxide (ZnO) thin-film transistors (TFTs) are investigated in a wide range of temperatures and bias conditions. Scaling down the channel length, the TFT performance is seriously affected by contact resistances, which depend on gate voltage and temperature. To account for the contact resistances, the transistor is...
article 2011
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Torricelli, F. (author), Meijboom, J.R. (author), Smits, E. (author), Tripathi, A.K. (author), Ferroni, M. (author), Federici, S. (author), Gelinck, G.H. (author), Colalongo, L. (author), Kovacs-Vajna, Z.M. (author), de Leeuw, D. (author), Cantatore, E. (author)
Thin-film transistors (TFTs), which use zinc oxide (ZnO) as an active layer, were fabricated and investigated in detail. The transport properties of ZnO deposited by spray pyrolysis (SP) on a TFT structure are studied in a wide range of temperatures, electrical conditions (i.e., subthreshold, above-threshold linear, and saturation regions), and...
article 2011
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