Searched for: author%3A%22Smaal%2C+W.T.T.%22
(1 - 7 of 7)
document
Kjellander, B.K.C. (author), Smaal, W.T.T. (author), Myny, K. (author), Genoe, J. (author), Dehaene, W. (author), Heremans, P. (author), Gelinck, G.H. (author)
We ink-jet print a blend of 6,13-bis(triisopropyl-silylethynyl)pentacene and polystyrene as the active layer for flexible circuits. The discrete ink-jet printed transistors exhibit a saturation mobility of 0.5 cm2 V -1 s-1. The relative spread in transistor characteristics can be very large. This spread is due to the morphology of the TIPS-PEN...
article 2013
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Qin, Y. (author), Turkenburg, D.H. (author), Barbu, I. (author), Smaal, W.T.T. (author), Myny, K. (author), Lin, W.Y. (author), Gelinck, G.H. (author), Heremans, P. (author), Liu, J. (author), Meinders, E.R. (author)
An upscalable, self-aligned patterning technique for manufacturing high-performance, flexible organic thin-film transistors is presented. The structures are self-aligned using a single-step, multi-level hot embossing process. In combination with defect-free anodized aluminum oxide as a gate dielectric, transistors on foil with channel lengths...
article 2012
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Li, X. (author), Kadashchuk, A. (author), Fishchuk, I.I. (author), Smaal, W.T.T. (author), Gelinck, G.H. (author), Broer, D.J. (author), Genoe, J. (author), Heremans, P. (author), Bässler, H. (author)
While it is known that the charge-carrier mobility in organic semiconductors is only weakly dependent on the electric field at low fields, the experimental mobility in organic field-effect transistors using silylethynyl-substituted pentacene is found to be surprisingly field dependent at low source-drain fields. Corroborated by scanning Kelvin...
article 2012
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James, D.T. (author), Kjellander, B.K.C. (author), Smaal, W.T.T. (author), Gelinck, G.H. (author), Combe, C. (author), McCulloch, I. (author), Wilson, R. (author), Burroughes, J.H. (author), Bradley, D.D.C. (author), Kim, J.S. (author)
We report thin-film morphology studies of inkjet-printed single-droplet organic thin-film transistors (OTFTs) using angle-dependent polarized Raman spectroscopy. We show this to be an effective technique to determine the degree of molecular order as well as to spatially resolve the orientation of the conjugated backbones of the 6,13-bis...
article 2011
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Moonen, P.F. (author), Vratzov, B. (author), Smaal, W.T.T. (author), Gelinck, G.H. (author), Peter, M. (author), Meinders, E.R. (author), Huskens, J. (author)
In this paper the fabrication of flexible thin film transistors (TFTs) on poly(ethylene naphthalate) foil is reported, with the source-drain layer patterned by step-and-flash imprint lithography (SFIL) as a first step towards fully UV-imprinted TFTs. The semiconductor was deposited by inkjet printing of a blend of TIPS-pentacene/polystyrene. The...
article 2011
document
Li, X. (author), Smaal, W.T.T. (author), Kjellander, C. (author), van der Putten, B. (author), Gualandris, K. (author), Smits, E.C.P. (author), Anthony, J. (author), Broer, D.J. (author), Blom, P.W.M. (author), Genoe, J. (author), Gelinck, G.H. (author)
We present a systematic study of the influence of material composition and ink-jet processing conditions on the charge transport in bottom-gate field-effect transistors based on blends of 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-PEN) and polystyrene. After careful process optimizations of blending ratio and printing temperature we...
article 2011
document
Kjellander, B.K.C. (author), Smaal, W.T.T. (author), Anthony, J.E. (author), Gelinck, G.H. (author), TNO Industrie en Techniek (author)
We present an approach to inkjet print high-performance organic transistors by printing the organic semiconductor ink on a thin, continuous, and solvent-absorbing layer of insulating material. The ink spreading is effectively controlled by local dissolution of the layer, and during drying the characteristic circular morphology with high rims and...
article 2010
Searched for: author%3A%22Smaal%2C+W.T.T.%22
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