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Nag, M. (author), Bhoolokam, A. (author), Smout, S. (author), Willegems, M. (author), Muller, R. (author), Myny, K. (author), Schols, S. (author), Ameys, M. (author), Genoe, J. (author), Ke, T.H. (author), Vicca, P. (author), Ellis, T. (author), Cobb, B. (author), Kumar, A. (author), van der Steen, J.L.P.J. (author), Gelinck, G. (author), Fukui, Y. (author), Obata, K. (author), Groeseneken, G. (author), Heremans, P. (author), Steudel, S. (author)A process to make self-aligned top-gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) on polyimide foil is presented. The source/drain (S/D) region's parasitic resistance reduced during the SiN interlayer deposition step. The sheet resistivity of S/D region after exposure to SiN interlayer deposition decreased to 1.5...article 2015
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Steudel, S. (author), Cobb, B. (author), Nag, M. (author), Obata, K. (author), Murata, K.M. (author), Schols, S. (author), Vicca, P. (author), Ke, T.H. (author), Smout, S. (author), Willegems, M. (author), Ameys, M. (author), Bhoolakam, A. (author), Kumar, A. (author), Kumar, A. (author), van der Steen, J.L. (author), Genoe, J. (author), Gelinck, G.H. (author), Heremans, P.L. (author)We present a QVGA (320x240 with 3 sub-pixel) top-emitting AMOLED display with 250ppi resolution using a self-aligned (SA) IGZO TFT backplane on polyimide-foil with full barrier. The back plane process flow is based on a 7 layer photolithography process. The aperture ratio of the top-emitting OLEDs is approx. 80%. An integrated gate driver is...article 2015
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Nag, M. (author), Muller, R. (author), Steudel, S. (author), Smout, S. (author), Bhoolokam, A. (author), Myny, K. (author), Schols, S. (author), Genoe, J. (author), Cobb, B. (author), Kumar, A. (author), Gelinck, G. (author), Fukui, Y. (author), Groeseneken, G. (author), Heremans, P. (author)We demonstrated self-aligned amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) where the source–drain (S/D) regions were made conductive via chemical reduction of the a-IGZO via metallic calcium (Ca). Due to the higher chemical reactivity of Ca, the process can be operated at lower temperatures. The Ca process has the...article 2015
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Li, F. (author), Smits, E. (author), van Leuken, L. (author), Haas, D.G. (author), Ellis, T. (author), van der Steen, J.L. (author), Tripathi, A.K. (author), Myny, K. (author), Ameys, M. (author), Schols, S. (author), Heremans, P. (author), Gelinck, G.H. (author)AMOLED displays using oxide TFTs and high-quality moisture barrier were fabricated on ultrathin, flexible plastic substrates to give maximum mechanical flexibility. Total display thickness is below 150μm, and repeated rollability at 1 cm roll radius has been demonstrated. Electrical/Mechanical characteristics and reliability of the flexible...article 2014
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Nag, M. (author), Rockele, M. (author), Steudel, S. (author), Chasin, A. (author), Myny, K. (author), Bhoolokam, A. (author), Willegems, M. (author), Smout, S. (author), Vicca, P. (author), Ameys, M. (author), Ke, T.H. (author), Schols, S. (author), Genoe, J. (author), van der Steen, J.L.P.J. (author), Groeseneken, G. (author), Heremans, P. (author)In this study, we report high-quality amorphous indiunrv-galiium-zinc-oxide (a-IGZO) thinfilm transistors (TFTs) fabricated on a polyethylene naphthalate foil using a new back-channel-etch (BCE) process flow. The BCE flow allows a better scalability of TFTs for high-resolution backplanes and related circuits. The maximum processing temperature...article 2014
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Genoe, J. (author), Obata, K. (author), Ameys, M. (author), Myny, K. (author), Ke, T.H. (author), Nag, M. (author), Steudel, S. (author), Schols, S. (author), Maas, J. (author), Tripathi, A. (author), Van Der Steen, J.-L. (author), Ellis, T. (author), Gelinck, G.H. (author), Heremans, P. (author)The efficiency of small-molecule OLED devices increased substantially in recent years, creating opportunities for power-efficient displays, as only light is generated proportional to the subpixel intensity. However, current active matrix OLED (AMOLED) displays on foil do not validate this power-efficient advantage, as too much power is lost in...conference paper 2014
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Gelinck, G.H. (author), van der Steen, J.L. (author), Tripathi, A.K. (author), Ellis, T. (author), Akkerman, H. (author), van Leuken, L. (author), Li, F. (author), Maas, J. (author), Smits, E. (author), Rovers, M. (author), Nag, M. (author), Myny, K. (author), Malinowski, P. (author), Ameys, M. (author), Ke, T.H. (author), Schols, S. (author), Steudel, S. (author), Genoe, J. (author), Heremans, P. (author)In this paper, we present some of the technology challenges and process temperature trade-offs when realizing AM OLED displays on thin flexible plastic films that can be mechanically bent to a roll radius of ∼1 cm. We furthermore present complementary approaches to realize low-power, high resolution OLED displays using self-aligned IGZO TFT...conference paper 2014
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Malinowski, P.E. (author), Vicca, P. (author), Willegems, M. (author), Schols, S. (author), Cheyns, D. (author), Smout, S. (author), Ameys, M. (author), Myny, K. (author), Vaidyanathan, S. (author), Martin, E. (author), Kumar, A. (author), van der Steen, J.L. (author), Gelinck, G.H. (author), Heremans, P. (author)We report on the fabrication of imagers based on organic semiconductors both in the photodiode layer and in the readout backplane. The photodiode is based on evaporated ultrathin (<100 nm) stack of SubPc/C60, sensitive in the wavelength range between 300 and 650 nm. The readout circuit is a switch matrix fabricated with a solution processed...article 2014
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Nag, M. (author), Obata, K. (author), Fukui, Y. (author), Myny, K. (author), Schols, S. (author), Vicca, P. (author), Ke, T.H. (author), Smout, S. (author), Willegems, M. (author), Ameys, M. (author), Bhoolokam, A. (author), Muller, R. (author), Cobb, B. (author), Kumar, A. (author), van der Steen, J.L. (author), Ellis, T. (author), Gelinck, G.H. (author), Genoe, J. (author), Heremans, P. (author), Steudel, S. (author)We present a QQVGA (160times120 with 3 sub-pixel) top-emitting AMOLED display with 85ppi resolution using a self-aligned (SA) IGZO TFT backplane on polyimide-foil. The back plane process flow is based on a 5 layer photolithography process. The aperture ratio of the top-emitting OLEDs is approx. 25%. For operation at 6 V supply voltage (VDD), the...article 2014
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Kam, B. (author), Ke, T.H. (author), Chasin, A. (author), Tyagi, M. (author), Cristoferi, C. (author), Tempelaars, K. (author), van Breemen, A.J.J.M. (author), Myny, K. (author), Schols, S. (author), Genoe, J. (author), Gelinck, G.H. (author), Heremans, P. (author)We present a memory array of organic ferroelectric field-effect transistors (OFeFETs) on flexible substrates. The OFeFETs are connected serially, similar to the NAND architecture of flash memory, which offers the highest memory density of transistor memories. We demonstrate a reliable addressing scheme in this architecture, without the need for...article 2014
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Fukui, Y. (author), Shibata, M. (author), Tanaka, Y. (author), Okumoto, K. (author), Morita, K. (author), Otake, K. (author), Tripathi, A.K. (author), van der Putten, B. (author), van der Steen, J.L. (author), Tempelaars, K. (author), van Leuken, L. (author), Li, F. (author), Yakimets, I. (author), Gelinck, G.H. (author), Myny, K. (author), Smout, S. (author), Willegems, M. (author), Schols, S. (author), Steudel, S. (author), Genoe, J. (author), Heremans, P. (author)We have developed a full color flexible top-emission AMOLED display with 80 ppi resolution using In-Ga-Zn-O TFT backplane on PEN foil under the maximum process temperature of 150 oC. Notwithstanding the low processing temperature, the TFTs with SiOx passivation layer show high reliability with VTH shift of less than 0.2 V at 10,000 seconds under...article 2013
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van der Steen, J.L.P.J. (author), Tripathi, A.K. (author), Maas, J.P.V. (author), van Diesen-Tempelaars, K. (author), van Leuken, L.B. (author), de Haas, G.J.A.J.F. (author), van der Putten, J.B.P.H. (author), Yakimets, I. (author), Li, F.M.W. (author), Ellis, T.H. (author), van Mol, A.M.B. (author), Gelinck, G.H. (author), Vicca, P. (author), Smout, S. (author), Ameys, M. (author), Huei Ke, T. (author), Steudel, S. (author), Nag, M. (author), Schols, S. (author), Genoe, J. (author), Heremans, P. (author), Fukui, Y. (author), Green, S. (author)We present a low-temperature metal oxide transistor backplane technology using PECVD dielectrics. We show successful integration of the backplane in flexible 200ppi AMOLED displays on ultrathin polymer films. The displays are encapsulated with a thin-film barrier and the total stack thickness is less than 150μm.conference paper 2013
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- Steudel, S. (author), Myny, K. (author), Schols, S. (author), Vicca, P. (author), Smout, S. (author), Tripathi, A.K. (author), van der Putten, B. (author), van der Steen, J.L. (author), van Neer, M. (author), Schütze, F. (author), Hild, O.R. (author), van Veenendaal, E. (author), van Lieshout, P. (author), van Mil, M. (author), Genoe, J. (author), Gelinck, G.H. (author), Heremans, P. (author) article 2012
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Rockelé, M. (author), Pham, D.V. (author), Steiger, J. (author), Botnaras, S. (author), Weber, D. (author), Vanfleteren, J. (author), Sterken, T. (author), Cuypers, D. (author), Steudel, S. (author), Myny, K. (author), Schols, S. (author), van der Putten, J.B.P.H. (author), Genoe, J. (author), Heremans, P. (author)High-performance solution-based n-type metal oxide thin-film transistors (TFTs), fabricated directly on polyimide foil at a post-annealing temperature of only 250''C, are realized and reported. Saturation mobilities exceeding 2cmV(Vs) and on-to-off current ratios up to 10^ are achieved. The usage of these oxide n-type TFTs as the pixel drive and...article 2012
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Tripathi, A.K. (author), van der Putten, B. (author), van der Steen, J.L. (author), Tempelaars, K. (author), Cobb, B. (author), Ameys, M. (author), Ke, T.H. (author), Myny, K. (author), Steudel, S. (author), Nag, M. (author), Schols, S. (author), Vicca, P. (author), Smout, S. (author), Genoe, J. (author), Heremans, P. (author), Yakimets, I. (author), Gelinck, G.H. (author)We present a top emitting monochrome AMOLED display with 85dpi resolution using an amorphous Indium-Gallium-Zinc-Oxide (IGZO) TFT backplane on PEN-foil. Maximum processing temperature was limited to 150 °C in order to ensure an overlay accuracy < 3μm on PEN foil. The backplane process flow is based on a 7 mask photolithography process that...conference paper 2012
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Kam, B. (author), Li, X. (author), Cristoferi, C. (author), Smits, E.C.P. (author), Mityashin, A. (author), Schols, S. (author), Genoe, J. (author), Gelinck, G.H. (author), Heremans, P. (author)In this work, we investigate the ferroelectric polarization state in metal-ferroelectric-semiconductor-metal structures and in ferroelectric field-effect transistors (FeFET). Poly(vinylidene fluoride-trifluoroethylene) and pentacene was used as the ferroelectric and semiconductor, respectively. This material combination in a bottom gate-top...article 2012
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Rockelé, M. (author), Pham, D.-V. (author), Steiger, J. (author), Botnaras, S. (author), Weber, D. (author), Vanfleteren, J. (author), Sterken, T. (author), Cuypers, D. (author), Steudel, S. (author), Myny, K. (author), Schols, S. (author), van der Putten, J.B.P.H. (author), Genoe, J. (author), Heremans, P. (author)In this article, we report on high-performance solution-based n-type metal oxide TFTs processed directly on polyimide foil and annealed at 250°C. Saturation mobilities exceeding 2 cm2/(Vs) and Ion/I off ratios beyond 108 have been achieved. Using these oxide n-TFTs, fast and low-voltage flexible circuitry is presented. Furthermore, a complete 8...conference paper 2011
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Steudel, S. (author), Myny, K. (author), Schols, S. (author), Vicca, P. (author), Smout, S. (author), Tripathi, A.K. (author), van der Putten, J.B.P.H. (author), van der Steen, J.L. (author), van Neer, M.K.P. (author), Schütze, F. (author), Hild, O.R. (author), van Veenendaal, E. (author), van Mil, M. (author), Genoe, J. (author), Gelinck, G.H. (author), Heremans, P. (author)We present a QQVGA top emitting monochrome AMOLED display with 85dpi resolution using an organic TFT backplane on low temperature PEN-foil. The back plane process flow is based on a 7 layer photolithography process that yields a final mobility of the OTFT of ∼0.4cm2/Vs. The aperture ratio of the top-emitting OLEDs is over 75%. For operation at...conference paper 2011
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- Rockele, M. (author), Pham, D.V. (author), Hoppe, A. (author), Steiger, J. (author), Botnaras, S. (author), Nag, M. (author), Steudel, S. (author), Myny, K. (author), Schols, S. (author), Muller, R. (author), van der Putten, B. (author), Genoe, J. (author), Heremans, P. (author) article 2011
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Bode, D. (author), Rolin, C. (author), Schols, S. (author), Debucquoy, M. (author), Steudel, S. (author), Gelinck, G.H. (author), Genoe, J. (author), Heremans, P. (author), TNO Industrie en Techniek (author)Parameter variation in organic thin-film transistor (OTFT) technology is known to limit the yield of digital circuits. It is expected that complementary OTFT technology (C-TFT) will reduce the sensitivity to parameter variations. In this paper, we quantify the dependence of yield on transistor parameter variations for C-TFT and compare it to...article 2010