- High-Throughput Area-Selective Spatial Atomic Layer Deposition of SiO2 with Interleaved Small Molecule Inhibitors and Integrated Back-Etch Correction for Low Defectivity
- Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 11
- Area-selective spatial ALD of SiO2 interleaved with back-etch corrections: Selectivity and surface inspection of non-growth area