Searched for: author%3A%22Poodt%2C+P.W.G.%22
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Mameli, A. (author), Fawzy, A. (author), Roozeboom, F. (author), Poodt, P.W.G. (author)
The present disclosure concerns an atomie layer deposition device for area-selective deposition of a target material layer onto a deposition area of a substrate surface further comprising a non-deposition area. In use the substrate is conveyed along a plurality of deposition and separator spaces including at least two gas separator spaces...
patent 2023
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Creyghton, Y.L.M. (author), Poodt, P.W.G. (author), Simor, M. (author), Roozeboom, F. (author)
A plasma source has an outer surface, interrupted by an aperture for delivering an atmospheric plasma from the outer surface. A transport mechanism transports a substrate in parallel with the outer surface, closely to the outer surface, so that gas from the atmospheric plasma may form a gas bearing between the outer surface the and the substrate...
patent 2022
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van den Bruele, F.J. (author), Grob, F. (author), Creyghton, Y.L.M. (author), Shen, J. (author), Bolt, P. (author), Poodt, P.W.G. (author)
public lecture 2021
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Mameli, A. (author), Fawzy, A. (author), Roozeboom, F. (author), Poodt, P.W.G. (author)
The present disclosure concerns an atomic layer deposition device for area-selective deposition of a target material layer onto a deposition area of a substrate surface further comprising a non-deposition area. In use the substrate is conveyed along a plurality of deposition and separator spaces including at least two gas separator spaces...
patent 2021
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Roozeboom, F. (author), Lankhorst, A.M. (author), Poodt, P.W.G. (author), Koster, N.B. (author), Winands, G.J.J. (author), Vermeer, A.J.P.M. (author)
The invention relates to an apparatus for reactive ion etching of a substrate, comprising: a plasma etch zone including an etch gas supply and arranged with a plasma generating structure for igniting a plasma and comprising an electrode structure arranged to accelerate the etch plasma toward a substrate portion to have ions impinge on the...
patent 2017
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Poodt, P.W.G. (author), Mameli, A. (author), Schulpen, J.J.P.M. (author), Kessels, W.M.M. (author), Roozeboom, F. (author)
Atomic layer deposition (ALD) is renowned for its step coverage in porous substrates. Several emerging applications require a combination of this high step coverage with high throughput ALD, like spatial ALD. Often, high throughput ALD is performed at atmospheric pressure, and therefore, the effect of reactor pressure on the saturation dose is...
article 2017
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Frijters, C.H. (author), Bolt, P.J. (author), Poodt, P.W.G. (author), Knaapen, R. (author), van den Brink, J. (author), Ruth, M. (author), Bremaud, D. (author), Illiberi, A. (author)
In this manuscript we present the first successful application of a spatial atomic-layer-deposition process to thin film solar cells. Zn(O,S) has been grown by spatial atomic layer deposition (S-ALD) at atmospheric pressure and applied as buffer layer in rigid and flexible CIGS cells by a lab-scale (15x15 cm2) S-ALD set-up. We achieved values of...
conference paper 2016
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Creyghton, Y.L.M. (author), Poodt, P.W.G. (author), Simor, M. (author), Foozeboom, F. (author)
patent 2015
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Illiberi, A. (author), Frijters, C. (author), Balder, J.E. (author), Poodt, P.W.G. (author), Roozeboom, F. (author)
Spatial Atmosperic Atomic Layer Depositon combines the advantages of temporal ALD, i.e. excellent control of film composition and uniformity over large area substrates, with high growth rages (up tot nm/s). In this paper we present a short overview of our research acctivity carried out on S-ALD of functional thin filsm for the front window of...
article 2015
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Roozeboom, F. (author), van den Bruele, F. (author), Creyghton, Y.L.M. (author), Poodt, P.W.G. (author), Kessels, W.M.M. (author)
article 2015
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van den Bruele, F.J. (author), Smets, M.M.H. (author), Illiberi, A. (author), Creyghton, Y.L.M. (author), Buskens, P.J.P. (author), Roozeboom, F. (author), Poodt, P.W.G. (author)
The authors have investigated the growth of thin silver films using a unique combination of atmospheric process elements: spatial atomic layer deposition and an atmospheric pressure surface dielectric barrier discharge plasma source. Silver films were grown on top of Si substrates with good purity as revealed by resistivity values as low as 18μΩ...
article 2014
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Poodt, P.W.G. (author), van Lieshout, J. (author), Illiberi, A. (author), Knaapen, R. (author), Roozeboom, F. (author), van Asten, A. (author)
Spatial atomic layer deposition (ALD) is a promising technology for high deposition rate and high-throughput ALD that can be used for roll-to-roll and large-area applications. In an ideal spatial ALD reactor, the design of the injector should be tuned to the deposition kinetics of the ALD reaction, requiring an in-depth knowledge of the...
article 2013
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Poodt, P.W.G. (author), Illiberi, A. (author), Roozeboom, F. (author)
Spatial atomic layer deposition can be used as a high-throughput manufacturing technique in functional thin film deposition for applications such as flexible electronics. This, however, requires low-temperature deposition processes. We have investigated the kinetics of low-temperature (< 100 C) spatial atomic layer deposition of alumina from tri...
article 2013
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Illiberi, A. (author), Roozeboom, F. (author), Poodt, P.W.G. (author)
Zinc oxide thin films have been deposited at high growth rates (up to ~1 nm/s) by spatial atomic layer deposition technique at atmospheric pressure. Water has been used as oxidant for diethylzinc (DEZ) at deposition temperatures between 75 and 250 °C. The electrical, structural (crystallinity and morphology), and optical properties of the films...
article 2012
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van Deelen, J. (author), Kniknie, B.J. (author), Grob, F.T.J. (author), Volintiru, I. (author), Roozeboom, F. (author), Poodt, P.W.G. (author), Illiberi, A. (author)
Transparent conductive oxide (TCO) coated glass is widely used in thin film PV. Atmospheric pressure chemical vapor deposition (APCVD) is a highly cost effective method of deposition and apart from metal precursor and oxygen precursor, other additives can improve the layer quality. In this contribution, we present an overview of the latest...
conference paper 2012
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Roozeboom, F. (author), Kniknie, B.J. (author), Lankhorst, A.M. (author), Winands, G. (author), Knaapen, R. (author), Smets, M. (author), Poodt, P.W.G. (author), Dingemans, G. (author), Keuning, W. (author), Kessels, W.M.M. (author)
Conventional Deep Reactive Ion Etching (DRIE) is a plasma etch process with alternating half-cycles of 1) Si-etching with SF6 to form gaseous SiFx etch products, and 2) passivation with C4F8 that polymerizes as a protecting fluorocarbon deposit on the sidewalls and bottom of the etched features. In this work we report on a novel alternative and...
conference paper 2012
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Poodt, P.W.G. (author), Cameron, D.C. (author), Dickey, E. (author), George, S.M. (author), Kuznetsov, V. (author), Parsons, G.N. (author), Roozeboom, F. (author), Sundaram, G. (author), Vermeer, A. (author)
Atomic layer deposition (ALD) is a technique capable of producing ultrathin conformal films with atomic level control over thickness. A major drawback of ALD is its low deposition rate, making ALD less attractive for applications that require high throughput processing. An approach to overcome this drawback is spatial ALD, i.e., an ALD mode...
article 2012
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Poodt, P.W.G. (author), Roozeboom, F. (author), van Asten, A. (author)
article 2012
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Vermeer, A. (author), Roozeboom, F. (author), Poodt, P.W.G. (author), Gortzen, R.M.W. (author)
Atomic Layer Deposition (ALD) is a gas phase deposition technique for depositing very high quality thin films with an unsurpassed conformality. The main drawback of ALD however is the very low deposition rate (~ 1 nm/min). Recently, record deposition rates for alumina of up to I nm/s were reached using spatial ALD, while maintaining the typical...
conference paper 2012
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van Deelen, J. (author), Volintiru, I. (author), Poodt, P.W.G. (author)
conference paper 2011
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