Searched for: author%3A%22Poodt%2C+P.%22
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Kronemeijer, A.J. (author), Katsouras, I. (author), Poodt, P. (author), Akkerman, H.B. (author), van Breemen, A.J.J.M. (author), Gelinck, G.H. (author)
We present recent developments on flexible a-IGZO TFT technology scaling in terms of TFT channel length and operating voltage, as well as manufacturing cost optimization with a focus on R2R processing compatibility. We present progress on the relevant technology building blocks; (i) R2R compatible TFT architecture, (ii) (multilevel) nanoimprint...
conference paper 2018
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Akkerman, H.B. (author), Pendyala, R.K. (author), Panditha, P. (author), Salem, A. (author), Shen, J. (author), van de Weijer, P. (author), Bouten, P.C.P. (author), de Winter, S.H.P.M. (author), van Diesen-Tempelaars, K. (author), de Haas, G. (author), Steudel, S. (author), Huang, C.Y. (author), Lai, M.H. (author), Huang, Y.Y. (author), Yeh, M.H. (author), Kronemeijer, A.J. (author), Poodt, P. (author), Gelinck, G.H. (author)
We present a thin-film dual-layer bottom barrier on polyimide that is compatible with 350°C backplane processing for organic light-emitting diode displays and that can facilitate foldable active-matrix organic light-emitting diode devices with a bending radius of <2 mm. We demonstrate organic light-emitting diodes that survive bending over 0.5...
article 2018
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Najafi, M. (author), Zardetto, V. (author), Zhang, D. (author), Koushik, D. (author), Dorenkamper, M.S. (author), Creatore, M. (author), Andriessen, R. (author), Poodt, P. (author), Veenstra, S. (author)
The replacement of the conventional top metal contact with a semi-transparent conducting electrode such as sputtered indium-tin oxide (ITO) is strictly required to adopt the perovskite solar cell (PSC) in hybrid tandem photovoltaic applications. In order to prevent sputtering damages on the perovskite absorber and the organic materials adopted...
article 2018
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Perrotta, A. (author), Poodt, P. (author), van den Bruele, F.J. (author), Kessels, W.M.M. (author), Creatore, M. (author)
Molecular layer deposition (MLD) delivers (ultra-) thin organic and hybrid materials, with atomic-level thickness control. However, such layers are often reported to be unstable under ambient conditions, due to the interaction of water and oxygen with the hybrid structure, consequently limiting their applications. In this contribution, we...
article 2018
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Moitzheim, S. (author), Balder, J.E. (author), Poodt, P. (author), Unnikrishnan, S. (author), de Gendt, S. (author), Vereecken, P.M. (author)
Titania (TiO2) offers a high theoretical capacity of 336 mAh g-1 with the insertion of one Li per Ti unit. Unfortunately, the poor ionic and electronic conductivity of bulk TiO2 electrodes limits its practical implementation. Nanosizing titania below ∼20 nm has shown to increase the rate performance and accessible capacity but still not more...
article 2017
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Frijters, C. (author), van den Bruele, F. (author), Grob, F. (author), Illiberi, A. (author), Creyghton, Y. (author), Roozeboom, F. (author), Poodt, P. (author)
public lecture 2017
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Illiberi, A. (author), Katsouras, I. (author), Gazibegovic, S. (author), Cobb, B. (author), Nekovic, E. (author), van Boekel, W. (author), Frijters, C. (author), Maas, J. (author), Roozeboom, F. (author), Creyghton, Y. (author), Poodt, P. (author), Gelinkck, G. (author)
public lecture 2017
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Illiberi, A. (author), Katsouras, I. (author), Gazibegovic, S. (author), Cobb, B. (author), Nekovic, E. (author), van Boekel, W. (author), Frijters, C. (author), Maas, J. (author), Roozeboom, F. (author), Creyghton, Y. (author), Poodt, P. (author), Gelinck, G. (author)
public lecture 2017
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Frijters, C.H. (author), Bolt, P.J. (author), Poodt, P. (author), Knaapen, R. (author), van den Brink, J. (author), Ruth, M. (author), Bremaud, D. (author), Illiberi, A. (author)
In this manuscript we present the first successful application of a spatial atomic-layer-deposition process to thin film solar cells. Zn(O,S) has been grown by spatial atomic layer deposition (S-ALD) at atmospheric pressure and applied as buffer layer in rigid and flexible CIGS cells by a lab-scale (15×15 cm2) S-ALD set-up. We achieved values of...
conference paper 2017
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Frijters, C.H. (author), Poodt, P. (author), Illeberi, A. (author)
Zinc oxysulfide has been grown by spatial atomic layer deposition (S-ALD) and successfully applied as buffer layer in Cu(In, Ga)Se2 (CIGS) solar cells. S-ALD combines high deposition rates (up to nm/s) with the advantages of conventional ALD, i.e. excellent control of film composition and superior uniformity over large-area and even non-flat...
article 2016
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Frijters, C. (author), Bolt, P.J. (author), Poodt, P. (author), Roozeboom, F. (author), Illiberi, A. (author)
public lecture 2016
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Creyghton, Y. (author), Illiberi, A. (author), Mione, M. (author), van Boekel, W. (author), Debernardi, N. (author), Seitz, M. (author), van den Bruele, F. (author), Poodt, P. (author), Roozeboom, F. (author)
Non-thermal plasma sources are known to lower the operation temperatures and widen the process windows in thermal ALD of thin-film materials. In spatial ALD, novel plasma sources with exceptional dimensional and chemical stability are required to provide the flow geometries optimized for efficient transport and use of radicals (O, N, H, OH, NH,...
conference paper 2016
document
Creyghton, Y. (author), Illiberi, A. (author), Mione, M. (author), van Boekel, W. (author), Debernardi, N. (author), Seitz, M. (author), van den Bruele, F. (author), Poodt, P. (author), Roozeboom, F. (author)
Atomic layer deposition by means of spatial separation of reactive gases is emerging as an industrial manufacturing technology. Integration of non-thermal plasma in spatial ALD machines will further expand the process window towards lower operation temperatures and specific materials requiring radicals (O, N, H, OH, NH etc.). Plasma sources with...
conference paper 2016
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Illiberi, A. (author), Cobb, B. (author), Sharma, A. (author), Grehl, T. (author), Brongersma, H. (author), Roozeboom, F. (author), Gelinck, G. (author), Poodt, P. (author)
We have investigated the nucleation and growth of InGaZnO thin films by spatial atmospheric atomic layer deposition. Diethyl zinc (DEZ), trimethyl indium (TMIn), triethyl gallium (TEGa), and water were used as Zn, In, Ga and oxygen precursors, respectively. The vaporized metal precursors have been coinjected in the reactor. The metal composition...
article 2015
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Hoye, R.L.Z. (author), Muñoz-Rojas, D. (author), Nelson, S.F. (author), Illiberi, A. (author), Poodt, P. (author), Roozeboom, F. (author), Macmanus-Driscoll, J.L. (author)
Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these...
article 2015
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Illiberi, A. (author), Grob, F. (author), Kniknie, B. (author), Frijters, C. (author), van Deelen, J. (author), Poodt, P. (author), Beckers, E.H.A. (author), Bolt, P.J. (author)
ZnO films have been grown on a moving glass substrate by high temperature (480 0C) chemical vapour deposition (CVD) and low temperature (200 0C) plasma enhanced CVD (PE-CVD) process at atmospheric pressure. Deposition rates above 7 nm/s have been achieved for substrate speeds from 20 to 500 mm/min. The conductivity of the films is enhanced by Al...
article 2014
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Illiberi, A. (author), Poodt, P. (author), Roozeboom, F. (author)
The industrial need for high-throughput and low-cost ZnO deposition processes has triggered the development of atmospheric vapor-phase deposition techniques which can be easily applied to continuous, in-line manufacturing. While atmospheric CVD is a mature technology, new processes for the growth of transparent conductive oxides on thermally...
article 2014
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Illiberi, A. (author), Scherpenborg, R. (author), Roozeboom, F. (author), Poodt, P. (author)
Indium-doped zinc oxide (ZnO:In) has been grown by spatial atomic layer deposition at atmospheric pressure (spatial-ALD). Trimethyl indium (TMIn), diethyl zinc (DEZ) and deionized water have been used as In, Zn and O precursor, respectively. The metal content of the films is controlled in the range from In/[In+Zn] = 0 to 23% by co-injecting the...
article 2014
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Illiberi, A. (author), Scherpenborg, R. (author), Theelen, M. (author), Poodt, P. (author), Roozeboom, F. (author)
Undoped and indium-doped ZnO films have been deposited by atmospheric spatial atomic-layer-deposition (spatial-ALD). The stability of their electrical, optical, and structural properties has been investigated by a damp-heat test in an environment with 85% relative humidity at 85 °C. The resistivity of the ZnO films increased during damp-heat...
article 2013
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Parsons, G.N. (author), Elam, J.W. (author), George, S.M. (author), Haukka, S. (author), Jeon, H. (author), Kessels, W.M.M. (author), Leskelä, M. (author), Poodt, P. (author), Ritala, M. (author), Rossnagel, S.M. (author)
This article explores the history of atomic layer deposition (ALD) and its relationship with the American Vacuum Society (AVS). The authors describe the origin and history of ALD science in the 1960s and 1970s. They also report on how the science and technology of ALD progressed through the 1990s and 2000s and continues today. This article...
article 2013
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