Searched for: author%3A%22Poodt%2C+P.%22
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Jain, H. (author), Creatore, M. (author), Poodt, P. (author)
Infiltration of trimethylaluminum (TMA) in molecular layer deposition-enabled alucone thin films on planar substrates is a common observation reported in the literature. An insufficient TMA purge time in such cases is often found to lead to a CVD component in the overall film growth due to the reactions between the outgassing TMA and the co...
article 2023
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Jain, H. (author), Creatore, M. (author), Poodt, P. (author)
Trimethylaluminum is the most used aluminum precursor in atomic and molecular layer deposition (ALD/MLD). It provides high growth-per-cycle (GPC), is highly reactive and is relatively low cost. However, in the deposition of hybrid alucone films, TMA tends to infiltrate into the films requiring very long purge steps and thereby limiting the...
article 2022
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Poodt, P. (author)
public lecture 2021
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Jain, H. (author), Poodt, P. (author)
The deposition rate and properties of MLD films are for a large part determined by what happens during the reactant exposure step. In some cases, however, the purge step is of equal importance, for example in MLD of alucone using trimethylaluminum (TMA) and ethylene glycol (EG). We show that infiltration of TMA into the alucone film followed by...
article 2021
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Mameli, A. (author), Brüner, P. (author), Roozeboom, F. (author), Grehl, T. (author), Poodt, P. (author)
public lecture 2020
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Parsons, G.N. (author), Elam, J.W. (author), George, S.M. (author), Haukka, S. (author), Jeon, H. (author), Kessels, W.M.M. (author), Leskelä, M. (author), Poodt, P. (author), Ritala, M. (author), Rossnagel, S.M. (author)
article 2020
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Mameli, A. (author), Roozeboom, F. (author), Poodt, P. (author)
public lecture 2019
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Mameli, A. (author), Roozeboom, F. (author), Poodt, P. (author)
Area-selective atomic layer deposition (AS-ALD) has the potential for pushing device manufacturing towards new frontiers. However, the selectivity that can be obtained is often very limited and the throughput of most AS-ALD methods is low, which hampers its industrial acceptance.[1,2] In this work, we present a process for AS-ALD of SiO2 using...
public lecture 2019
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Mameli, A. (author), Roozeboom, F. (author), Poodt, P. (author)
public lecture 2019
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Moitzheim, S. (author), Balder, J.E. (author), Ritasalo, R. (author), Ek, S. (author), Poodt, P. (author), Unnikrishnan, S. (author), de Gendt, S. (author), Vereecken, P.M. (author)
Three-dimensional (3D) thin-film solid-state batteries are an interesting concept for microstorage, promising high footprint capacity, fast charging, safety, and long lifetime. However, to realize their commercialization, several challenges still need to be overcome. In this work, we focus on two issues: the conformal coating and the high...
article 2019
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Mameli, A. (author), Roozeboom, F. (author), Poodt, P. (author)
public lecture 2019
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Katsouras, I. (author), Frijters, C. (author), Poodt, P. (author), Gelinck, G. (author), Kronemeijer, A.J. (author)
Indium gallium zinc oxide (IGZO) is deposited using plasma‐enhanced spatial atomic layer deposition (sALD) on substrates as large as 32 × 35 cm2. Excellent uniformity and thickness control leads to high‐performing and stable coplanar top‐gate self‐aligned (SA) thin‐film transistors (TFTs). The integration of a sALD‐deposited aluminum oxide...
article 2019
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Katsouras, I. (author), Frijters, C. (author), Poodt, P. (author), Gelinck, G. (author), Kronemeijer, A.J. (author)
Indium gallium zinc oxide (IGZO) is deposited using plasma-enhanced spatial atomic layer deposition (sALD) on substrates as large as 32 × 35 cm 2 . Excellent uniformity and thickness control leads to high-performing and stable coplanar top-gate self-aligned (SA) thin-film transistors (TFTs). The integration of a sALD-deposited aluminum oxide...
article 2019
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Najafi, M. (author), Zhang, D. (author), Zardetto, V. (author), Lifka, H. (author), Verhees, W. (author), 't Mannetje, H. (author), Fledderus, H. (author), Di Giacomo, F. (author), Hupkes, J. (author), Poodt, P. (author), Galagann, Y. (author), Luxembourg, S. (author), Coletti, G. (author), Geerligs, B. (author), Linden, H. (author), Veenstra, S. (author), Andriessen, R. (author)
In this work, efficient rigid and flexible semi-transparent perovskite solar cells (ST-PSCs) were prepared in inverted (light incidence through hole transport layer) configuration. All layers were deposited by a combination of low-temperature solution-based, sputtering and spatial atomic layer deposition (sALD) techniques, which can be...
conference paper 2019
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Zardetto, V. (author), Galagan, Y. (author), Creatore, M. (author), Coletti, G. (author), Poodt, P. (author), Veenstra, S. (author), Andriessen, R. (author), di Giacomo, F. (author), Zhang, D. (author), Burgess, C. (author), Verhees, W. (author), Fledderus, H. (author), Dogan, I. (author), Najafi, M. (author), Lifka, H. (author)
In order to commercialize the perovskite solar cells (PSC) technology, efficient and industrial deposition methods over large areas have to be adopted, and the device architectures have to provide long term stability. In this work we combine several upscalable deposition methods to develop a stable semitransparent PSC. The control of the...
conference paper 2019
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Illiberi, A. (author), Frijters, C. (author), Ruth, M. (author), Bermaud, D. (author), Poodt, P. (author), Roozeboom, F. (author), Bolt, J.P. (author)
Zinc oxysulfide (ZnOS) is synthesized at atmospheric pressure in a laboratory-scale spatial atomic layer deposition setup by sequentially exposing the substrate to diethyl zinc and an H2O/H2S mixture, separated by a nitrogen gas curtain. The co-injection of H2O and H2S vapors in the same deposition zone enables an accurate control of the S/(O +...
article 2018
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Najafi, M. (author), Zhang, D. (author), Zardetto, V. (author), Di Giacomo, F. (author), Jaysankar, M. (author), Coletti, G. (author), Dorenkamper, M.S. (author), Lifka, H. (author), Verhees, W.J.H. (author), Poodt, P. (author), Geerligs, L.J. (author), Aernouts, T. (author), Veenstra, S. (author), Andriessen, H.A.J.M. (author)
The purpose of the work is to investigate high-efficient and stable 4-terminal perovskite/c-Si tandem devices. Hybrid tandems of c-Si bottom cells and perovskite top cells are perhaps the most promising candidates to reduce the levelized cost of electricity by increasing the overall tandem cell efficiency. To turn this promise in a commercial...
conference paper 2018
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Najafi, M. (author), Zhang, D. (author), Zardetto, V. (author), Fledderus, H. (author), Di Giacomo, F. (author), Jaysankar, M. (author), Coletti, G. (author), Dorenkamper, M.S. (author), Lifka, H. (author), Verhees, W.J.H. (author), Poodt, P. (author), Geerligs, L.J. (author), Aernouts, T. (author), Veenstra, S.C. (author), Andriessen, H.A.J.M. (author)
public lecture 2018
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Akkerman, H.B. (author), Pendayala, R. (author), Panditha, V.K.P. (author), Salem, A. (author), Shen, J. (author), van de Weijer, P. (author), Bouten, P.C.P. (author), Winter, S.H.P.M. (author), van Diesen-Tempelaars, K. (author), de Haas, G.J.A.J.F. (author), Steudel, S. (author), Huand, C. (author), Lai, M. (author), Huang, Y. (author), Yeh, M. (author), Kronemeijer, A.J. (author), Poodt, P. (author), Gelinck, G. (author)
We present a thin-film dual-layer bottom barrier on PI that is compatible with 350°C backplane processing for OLED displays. We demonstrate OLEDs that survive bending over 0.5 mm radius for 10.000x. Furthermore, we show compatibility of the bottom barrier with the backplane process by fabricating AMOLED displays on GEN1-sized substrates.
conference paper 2018
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Zardetto, V. (author), Senes, A. (author), Najafi, M. (author), Zhang, D. (author), Joly, R. (author), Chippari, M. (author), Arneouts, T. (author), Poodt, P. (author), Veenstra, S. (author), Andriessen, R. (author)
In order to bring the organo-lead halide perovskite solar cells (PSC) towards the commercialization, the device stability needs to be drastically improved. Our approach relies on the introduction of a compact metal oxide (MeO) layer in a p-i-n planar architecture by means of atmospheric pressure spatial atomic layer deposition (s-ALD) technique....
conference paper 2018
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