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Nag, M. (author), Bhoolokam, A. (author), Smout, S. (author), Willegems, M. (author), Muller, R. (author), Myny, K. (author), Schols, S. (author), Ameys, M. (author), Genoe, J. (author), Ke, T.H. (author), Vicca, P. (author), Ellis, T. (author), Cobb, B. (author), Kumar, A. (author), van der Steen, J.L.P.J. (author), Gelinck, G. (author), Fukui, Y. (author), Obata, K. (author), Groeseneken, G. (author), Heremans, P. (author), Steudel, S. (author)A process to make self-aligned top-gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) on polyimide foil is presented. The source/drain (S/D) region's parasitic resistance reduced during the SiN interlayer deposition step. The sheet resistivity of S/D region after exposure to SiN interlayer deposition decreased to 1.5...article 2015
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Nag, M. (author), Muller, R. (author), Steudel, S. (author), Smout, S. (author), Bhoolokam, A. (author), Myny, K. (author), Schols, S. (author), Genoe, J. (author), Cobb, B. (author), Kumar, A. (author), Gelinck, G. (author), Fukui, Y. (author), Groeseneken, G. (author), Heremans, P. (author)We demonstrated self-aligned amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) where the source–drain (S/D) regions were made conductive via chemical reduction of the a-IGZO via metallic calcium (Ca). Due to the higher chemical reactivity of Ca, the process can be operated at lower temperatures. The Ca process has the...article 2015
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Myny, K. (author), Smout, S. (author), Rockelé, M. (author), Bhoolokam, A. (author), Ke, T.H. (author), Steudel, S. (author), Cobb, B. (author), Gulati, A. (author), Rodriguez, F.G. (author), Obata, K. (author), Marinkovic, M. (author), Pham, D.V. (author), Hoppe, A. (author), Gelinck, G.H. (author), Genoe, J. (author), Dehaene, W. (author), Heremans, P. (author)The Internet of Things is driving extensive efforts to develop intelligent everyday objects. This requires seamless integration of relatively simple electronics, for example through ‘stick-on’ electronics labels. We believe the future evolution of this technology will be governed by Wright’s Law, which was first proposed in 1936 and states that...article 2014
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Li, F. (author), Smits, E. (author), van Leuken, L. (author), Haas, D.G. (author), Ellis, T. (author), van der Steen, J.L. (author), Tripathi, A.K. (author), Myny, K. (author), Ameys, M. (author), Schols, S. (author), Heremans, P. (author), Gelinck, G.H. (author)AMOLED displays using oxide TFTs and high-quality moisture barrier were fabricated on ultrathin, flexible plastic substrates to give maximum mechanical flexibility. Total display thickness is below 150μm, and repeated rollability at 1 cm roll radius has been demonstrated. Electrical/Mechanical characteristics and reliability of the flexible...article 2014
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Nag, M. (author), Rockele, M. (author), Steudel, S. (author), Chasin, A. (author), Myny, K. (author), Bhoolokam, A. (author), Willegems, M. (author), Smout, S. (author), Vicca, P. (author), Ameys, M. (author), Ke, T.H. (author), Schols, S. (author), Genoe, J. (author), van der Steen, J.L.P.J. (author), Groeseneken, G. (author), Heremans, P. (author)In this study, we report high-quality amorphous indiunrv-galiium-zinc-oxide (a-IGZO) thinfilm transistors (TFTs) fabricated on a polyethylene naphthalate foil using a new back-channel-etch (BCE) process flow. The BCE flow allows a better scalability of TFTs for high-resolution backplanes and related circuits. The maximum processing temperature...article 2014
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Genoe, J. (author), Obata, K. (author), Ameys, M. (author), Myny, K. (author), Ke, T.H. (author), Nag, M. (author), Steudel, S. (author), Schols, S. (author), Maas, J. (author), Tripathi, A. (author), Van Der Steen, J.-L. (author), Ellis, T. (author), Gelinck, G.H. (author), Heremans, P. (author)The efficiency of small-molecule OLED devices increased substantially in recent years, creating opportunities for power-efficient displays, as only light is generated proportional to the subpixel intensity. However, current active matrix OLED (AMOLED) displays on foil do not validate this power-efficient advantage, as too much power is lost in...conference paper 2014
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Gelinck, G.H. (author), van der Steen, J.L. (author), Tripathi, A.K. (author), Ellis, T. (author), Akkerman, H. (author), van Leuken, L. (author), Li, F. (author), Maas, J. (author), Smits, E. (author), Rovers, M. (author), Nag, M. (author), Myny, K. (author), Malinowski, P. (author), Ameys, M. (author), Ke, T.H. (author), Schols, S. (author), Steudel, S. (author), Genoe, J. (author), Heremans, P. (author)In this paper, we present some of the technology challenges and process temperature trade-offs when realizing AM OLED displays on thin flexible plastic films that can be mechanically bent to a roll radius of ∼1 cm. We furthermore present complementary approaches to realize low-power, high resolution OLED displays using self-aligned IGZO TFT...conference paper 2014
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Nag, M. (author), Steudel, S. (author), Bhoolokam, A. (author), Chasin, A. (author), Rockele, M. (author), Myny, K. (author), Maas, J. (author), Fritz, T. (author), Trube, J. (author), Groeseneken, G. (author), Heremans, P. (author)In this work, we report on high-performance bottom-gate top-contact (BGTC) amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with SiO2 as an etch-stop-layer (ESL) deposited by medium frequency physical vapor deposition (mf-PVD). The TFTs show field-effect mobility (μFE) of 16.0cm2/(V.s), sub-threshold slope (SS -1) of 0.23V...article 2014
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Malinowski, P.E. (author), Vicca, P. (author), Willegems, M. (author), Schols, S. (author), Cheyns, D. (author), Smout, S. (author), Ameys, M. (author), Myny, K. (author), Vaidyanathan, S. (author), Martin, E. (author), Kumar, A. (author), van der Steen, J.L. (author), Gelinck, G.H. (author), Heremans, P. (author)We report on the fabrication of imagers based on organic semiconductors both in the photodiode layer and in the readout backplane. The photodiode is based on evaporated ultrathin (<100 nm) stack of SubPc/C60, sensitive in the wavelength range between 300 and 650 nm. The readout circuit is a switch matrix fabricated with a solution processed...article 2014
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Cobb, B. (author), Rodriguez, F.G. (author), Maas, J. (author), Ellis, T. (author), van der Steen, J.L. (author), Myny, K. (author), Smout, S. (author), Vicca, P. (author), Bhoolokam, A. (author), Rockelé, M. (author), Steudel, S. (author), Heremans, P. (author), Marinkovic, M. (author), Pham, D.V. (author), Hoppe, A. (author), Steiger, J. (author), Anselman, R. (author), Gelinck, G.H. (author)AMOLED backplanes were fabricated on both rigid glass and flexible plastic substrates using a solution processed oxide semiconductor processed at temperatures <250C with mobilities greater than 2 cm2/Vs. The backplanes were integrated onto a thin film moisture barrier and QQVGA AMOLED displays were successfully fabricated. cop. 2014 Society for...article 2014
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Myny, K. (author), Rockelé, M. (author), Chasin, A. (author), Pham, D.V. (author), Steiger, J. (author), Botnaras, S. (author), Weber, D. (author), Herold, B. (author), Ficker, J. (author), Van Putten, B.D. (author), Gelinck, G.H. (author), Genoe, J. (author), Dehaene, W. (author), Heremans, P. (author)A bidirectional communication protocol allows radio-frequency identification (RFID) tags to have readout of multiple tags in the RF field without collision of data. In this paper, we realized bidirectional communication between a reader system and thin-film RFID tag by introducing a novel protocol for the uplink communication. Amplitude...article 2014
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Nag, M. (author), Obata, K. (author), Fukui, Y. (author), Myny, K. (author), Schols, S. (author), Vicca, P. (author), Ke, T.H. (author), Smout, S. (author), Willegems, M. (author), Ameys, M. (author), Bhoolokam, A. (author), Muller, R. (author), Cobb, B. (author), Kumar, A. (author), van der Steen, J.L. (author), Ellis, T. (author), Gelinck, G.H. (author), Genoe, J. (author), Heremans, P. (author), Steudel, S. (author)We present a QQVGA (160times120 with 3 sub-pixel) top-emitting AMOLED display with 85ppi resolution using a self-aligned (SA) IGZO TFT backplane on polyimide-foil. The back plane process flow is based on a 5 layer photolithography process. The aperture ratio of the top-emitting OLEDs is approx. 25%. For operation at 6 V supply voltage (VDD), the...article 2014
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Kam, B. (author), Ke, T.H. (author), Chasin, A. (author), Tyagi, M. (author), Cristoferi, C. (author), Tempelaars, K. (author), van Breemen, A.J.J.M. (author), Myny, K. (author), Schols, S. (author), Genoe, J. (author), Gelinck, G.H. (author), Heremans, P. (author)We present a memory array of organic ferroelectric field-effect transistors (OFeFETs) on flexible substrates. The OFeFETs are connected serially, similar to the NAND architecture of flash memory, which offers the highest memory density of transistor memories. We demonstrate a reliable addressing scheme in this architecture, without the need for...article 2014
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Ke, T.H. (author), Müller, R. (author), Kam, B. (author), Rockele, M. (author), Chasin, A. (author), Myny, K. (author), Steudel, S. (author), Oosterbaan, W.D. (author), Lutsen, L. (author), Genoe, J. (author), van Leuken, L. (author), van der Putten, B. (author), Heremans, P. (author)In this work, we realize complementary circuits with organic p-type and n-type transistor integrated on polyethylene naphthalate (PEN) foil. We employ evaporated p-type and n-type organic semiconductors spaced side by side in bottom-contact bottom-gate coplanar structures with channel lengths of 5 μm. The area density is 0.08 mm2 per...article 2014
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Myny, K. (author), Smout, S. (author), Rockelé, M. (author), Bhoolokam, A. (author), Ke, T.H. (author), Steudel, S. (author), Obata, K. (author), Marinkovic, M. (author), Pham, D.V. (author), Hoppe, A. (author), Gulati, A. (author), Rodriguez, F.G. (author), Cobb, B. (author), Gelinck, G.H. (author), Genoe, J. (author), Dehaene, W. (author), Heremans, P. (author)We present an 8b general-purpose microprocessor realized in a hybrid oxide-organic complementary thin-film technology. The n-type transistors are based on a solution-processed n-type metal-oxide semiconductor, and the p-type transistors use an organic semiconductor. As compared to previous work utilizing unipolar logic gates [1], the higher...conference paper 2014
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Kumar, A. (author), Moet, D. (author), van der Steen, J.L. (author), Tripathi, A.K. (author), Rodriguez, F.G. (author), Maas, J. (author), Simon, M. (author), Reutten, W. (author), Douglas, A. (author), Raaijmakers, R. (author), Malinowski, P.E. (author), Myny, K. (author), Shafique, U. (author), Andriessen, R. (author), Heremans, P. (author), Gelinck, G.H. (author)We demonstrate organic imaging sensor arrays fabricated on flexible plastic foil with the solution processing route for both photodiodes and thin film transistors. We used the photovoltaic P3HT:PCBM blend for fabricating the photodiodes using spin coating and pentacene as semiconductor material for the TFTs. Photodiodes fabricated with P3HT:PCBM...conference paper 2014
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Fukui, Y. (author), Shibata, M. (author), Tanaka, Y. (author), Okumoto, K. (author), Morita, K. (author), Otake, K. (author), Tripathi, A.K. (author), van der Putten, B. (author), van der Steen, J.L. (author), Tempelaars, K. (author), van Leuken, L. (author), Li, F. (author), Yakimets, I. (author), Gelinck, G.H. (author), Myny, K. (author), Smout, S. (author), Willegems, M. (author), Schols, S. (author), Steudel, S. (author), Genoe, J. (author), Heremans, P. (author)We have developed a full color flexible top-emission AMOLED display with 80 ppi resolution using In-Ga-Zn-O TFT backplane on PEN foil under the maximum process temperature of 150 oC. Notwithstanding the low processing temperature, the TFTs with SiOx passivation layer show high reliability with VTH shift of less than 0.2 V at 10,000 seconds under...article 2013
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Gelinck, G.H. (author), Kumar, A. (author), Moet, D. (author), van der Steen, J.L. (author), Shafique, U. (author), Malinowski, P.E. (author), Myny, K. (author), Rand, B.P. (author), Simon, M. (author), Rütten, W. (author), Douglas, A. (author), Jorritsma, J. (author), Heremans, P.L. (author), Andriessen, H.A.J.M. (author)We describe the fabrication and characterization of large-area active-matrix X-ray/photodetector array of high quality using organic photodiodes and organic transistors. All layers with the exception of the electrodes are solution processed. Because it is processed on a very thin plastic substrate of 25 mu;m thickness, the photodetector is only...article 2013
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van Breemen, A. (author), Kam, B. (author), Cobb, B. (author), Rodriguez, F.G. (author), van Heck, G. (author), Myny, K. (author), Marrani, A. (author), Vinciguerra, V. (author), Gelinck, G.H. (author)In this paper, we successfully fabricated and operated passive matrix P(VDF-TrFE) transistor arrays, i.e. memory arrays in which no pass-transistors or other additional electronic components are used. Because of the smaller cell, a higher integration density is possible. We demonstrate arrays up to a size of 16 × 16, processed on thin (25 μm)...article 2013
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Kjellander, B.K.C. (author), Smaal, W.T.T. (author), Myny, K. (author), Genoe, J. (author), Dehaene, W. (author), Heremans, P. (author), Gelinck, G.H. (author)We ink-jet print a blend of 6,13-bis(triisopropyl-silylethynyl)pentacene and polystyrene as the active layer for flexible circuits. The discrete ink-jet printed transistors exhibit a saturation mobility of 0.5 cm2 V -1 s-1. The relative spread in transistor characteristics can be very large. This spread is due to the morphology of the TIPS-PEN...article 2013