Electrical Characterization of Thermally Activated Defects in n-Type Float-Zone Silicon

—Float-zone (FZ) silicon is usually assumed to be bulk defect-lean and stable. However, recent studies have revealed that detrimental defects can be thermally activated in FZ silicon wafers and lead to a reduction of carrier lifetime by up to two orders of magnitude. A robust methodology which combines different characterization techniques and...

Can thermal energy recovery from digestate make renewable gas from household waste more cost effective A case study for the Republic of Ireland

This article assesses the impact of energy recovery from digestate on the economics of biomethane produced from the organic fraction of municipal solid waste. Six waste-to-energy routes are investigated and assumed to be deployed in the regional context of the Republic of Ireland. Anaerobic digestion without energy recovery, and landspreading of...

New insights into the thermally activated defects in n-type float-zone silicon

Float-zone silicon has been long assumed to be bulk defect free and stable. Nevertheless, recently it was found that upon annealing between 450 °C to 700 °C detrimental defects can be activated in this material. Previous studies via deep level transient spectroscopy have identified several defect levels. However, it is still not clear which of...