Searched for: author%3A%22Moors%2C+R.%22
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Oderwald, M.P. (author), Ham, E.L. (author), van 't Hof, C.A. (author), Mertens, B.M. (author), van Mierlo, H.A. (author), Meiling, H. (author), Moors, R. (author), Meijer, H. (author), Blum, B. (author), TNO Industrie en Techniek (author)
conference paper 2006
Mertens, B.M. (author), Weiss, M. (author), Meiling, H. (author), Klein, R. (author), Louis, E. (author), Kurt, R. (author), Wedowski, M. (author), Trenkler, H. (author), Wolschrijn, B.T. (author), Jansen, R. (author), van de Runstraat, A. (author), Moors, R. (author), Spee, C.I.M.A. (author), Plöger, S. (author), van de Kruijs, R. (author), Technisch Physische Dienst TNO - TH (author)
Optics lifetime and contamination is one of the major challenges for extreme ultraviolet (EUV) lithography. The basic contamination and lifetime limiting processes are carbon growth and oxidation of the mirrors. Without appropriate measures, optics lifetime will be limited to a few hours. Within the EUV α-tool project of ASML and Carl Zeiss,...
article 2004
Moors, R. (author), Heerens, G.J. (author), Technisch Physische Dienst TNO - TH (author)
Electrostatic protection of mask for extreme ultraviolet lithography (EUVL) was discussed. Both charged and neutral particles could be prevented from moving towards the mask by choosing a nonuniform electrical field. Benefits of electrostatic protection are that it does not affect the EUV beam and works at the small operating pressures in an EUV...
article 2002