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Mione, M.A. (author), Vandalon, V. (author), Mameli, A. (author), Kessels, W.M.M. (author), Roozeboom, F. (author)An atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-s-ALD) process for SiO2 using bisdiethylaminosilane (BDEAS, SiH2[NEt2]2) and O2 plasma is reported along with an investigation of its underlying growth mechanism. Within the temperature range of 100−250 °C, the process demonstrates self-limiting growth with a growth per...article 2021
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- Mione, M.A. (author), Engeln, R. (author), Vandalon, V. (author), Kessels, W.M.M. (author), Roozeboom, F. (author) conference paper 2019
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- Mione, M.A. (author), Creyghton, Y. (author), Engeln, R. (author), Kessels, W.M.M. (author), Roozeboom, F. (author) public lecture 2019
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- Mione, M.A. (author), Engeln, R. (author), Vandalon, V. (author), Kessels, W.M.M. (author), Roozeboom, F. (author) public lecture 2019
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Mione, M.A. (author), Engeln, R. (author), Vandalon, V. (author), Kessels, W.M.M. (author), Roozeboom, F. (author)Atmospheric-pressure Plasma-Enhanced spatial Atomic Layer Deposition (PE-s-ALD) is a high-throughput technique for synthesizing thin films at low temperatures for large area applications. The spatial separation of the ALD half-reactions and the use of an atmospheric pressure plasma as the reactant give rise to complex surface chemistry which is...article 2019
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- Mione, M.A. (author), Creyghton, Y. (author), Engeln, R. (author), Kessels, W.M.M. (author), Roozeboom, F. (author) conference paper 2018
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Mione, M.A. (author), Katsouras, I. (author), Creyghton, Y. (author), van Boekel, W. (author), Maas, J. (author), Gelinck, G. (author), Roozeboom, F. (author), Illiberi, A. (author)High permittivity (high-k) materials have received considerable attention as alternatives to SiO2 for CMOS and low-power flexible electronics applications. In this study, we have grown high-quality ZrO2 by using atmospheric-pressure plasma-enhanced spatial ALD (PE-sALD), which, compared to temporal ALD, offers higher effective deposition rates...article 2017
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Mione, M.A. (author), Katsouras, I. (author), Creyghton, Y. (author), van Boekel, W. (author), Maas, J. (author), Gelinck, G. (author), Roozeboom, F. (author), Illiberi, A. (author)High permittivity (high-k) materials have received considerable attention as alternatives to SiO2 for CMOS and low-power flexible electronics applications. In this study, we have grown high-quality ZrO2 by using atmospheric-pressure plasma-enhanced spatial ALD (PE-sALD), which, compared to temporal ALD, offers higher effective deposition rates...article 2017