60 GHz 5-bit digital controlled phase shifter in a digital 40 nm CMOS technology without ultra-thick metals

A 5-bit digital controlled switch-type passive phase shifter realised in a 40 nm digital CMOS technology without ultra-thick metals for the 60 GHz Industrial, Scientific and Medical (ISM) band is presented. A patterned shielding with electromagnetic bandgap structure and a stacked metals method to increase the on-chip inductor quality factor are...

Characterization and modeling of atomic layer deposited high-density trench capacitors in silicon

A detailed electrical analysis of multiple layer trench capacitors fabricated in silicon with atomic-layer-deposited Al 2O 3 and TiN is presented. It is shown that in situ ozone annealing of the Al 2O 3 layers prior to the TiN electrode deposition significantly improves the electric properties of the devices such as the dielectric constant,...