Searched for: author%3A%22Mathijssen%2C+S.G.J.%22
(1 - 15 of 15)
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Brondijk, J.J. (author), Roelofs, W.S.C. (author), Mathijssen, S.G.J. (author), Shehu, A. (author), Cramer, T. (author), Biscarini, F. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
We analyze the effect of carrier confinement on the charge-transport properties of organic field-effect transistors. Confinement is achieved experimentally by the use of semiconductors of which the active layer is only one molecule thick. The two-dimensional confinement of charge carriers provides access to a previously unexplored charge...
article 2012
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Andringa, A.-M. (author), Meijboom, J.R. (author), Smits, E.C.P. (author), Mathijssen, S.G.J. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
Detection of nitrogen dioxide, NO2, is required to monitor the air-quality for human health and safety. Commercial sensors are typically chemiresistors, however field-effect transistors are being investigated. Although numerous investigations have been reported, the NO2 sensing mechanism is not clear. Here, the detection mechanism using ZnO...
article 2011
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Sharma, A. (author), Mathijssen, S.G.J. (author), Smits, E.C.P. (author), Kemerink, M. (author), de Leeuw, D.M. (author), Bobbert, P.A. (author), TNO Defensie en Veiligheid (author)
Organic field-effect transistors exhibit operational instabilities involving a shift of the threshold gate voltage when a gate bias is applied. For a constant gate bias the threshold voltage shifts toward the applied gate bias voltage, an effect known as the bias-stress effect. Here, we report on a detailed experimental and theoretical study of...
conference paper 2010
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Ponomarenko, S.A. (author), Borshchev, O.V. (author), Meyer-Friedrichsen, T. (author), Pleshkova, A.P. (author), Setayesh, S. (author), Smits, E.C.P. (author), Mathijssen, S.G.J. (author), de Leeuw, D.M. (author), Kirchmeyer, S. (author), Muzafarov, A.M. (author), TNO Industrie en Techniek (author)
Unsymmetrical dimethylchlorosilyl-substituted α, α′- dialkylquater-, quinque-, and sexithiophenes were designed and successfully synthesized by a combination of Kumada and Suzuki cross-coupling reactions followed by hydrosilylation. Optimization possibilities of the hydrosilylation of low-soluble linear oligothiophenes by dimethylchlorosilane as...
article 2010
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Andringa, A-M. (author), Spijkman, M-J. (author), Mathijssen, S.G.J. (author), Smits, E.C.P. (author), van Hal, P.A. (author), Setayesh, S. (author), Willard, N.P. (author), Borshchev, O.V. (author), Ponomarenko, S.A. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
A new sensitive gas sensor based on a self-assembled monolayer field-effect transistor (SAMFET) was used to detect the biomarker nitric oxide. A SAMFET based sensor is highly sensitive because the analyte and the active channel are separated by only one monolayer. SAMFETs were functionalised for direct NO detection using iron porphyrin as a...
article 2010
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Gholamrezaie, F. (author), Mathijssen, S.G.J. (author), Smits, E.C.P. (author), Geuns, T.C.T. (author), van Hal, P.A. (author), Ponomarenko, S.A. (author), Flesch, H.-G. (author), Resel, R. (author), Cantatore, E. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)
We report on a two-dimensional highly ordered self-assembled monolayer (SAM) directly grown on a bare polymer surface. Semiconducting SAMs are utilized in field-effect transistors and combined into integrated circuits as 4-bit code generators. The driving force to form highly ordered SAMs is packing of the liquid crystalline molecules caused by...
article 2010
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Spijkman, M. (author), Mathijssen, S.G.J. (author), Smits, E.C.P. (author), Kemerink, M. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)
A dual gate transistor was fabricated using a self-assembled monolayer as the semiconductor. We show the possibility of processing a dielectric on top of the self-assembled monolayer without deteriorating the device performance. The two gates of the transistor accumulate charges in the monomolecular transport layer and artifacts caused by the...
article 2010
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Charrier, D.S.H. (author), de Vries, T. (author), Mathijssen, S.G.J. (author), Geluk, E.-J. (author), Smits, E.C.P. (author), Kemerink, M. (author), Janssen, R.A.J. (author), TNO Industrie en Techniek (author)
In ambipolar organic field effect transistors (OFET) the shape of the channel potential is intimately related to the recombination zone width W, and hence to the electron–hole recombination strength. Experimentally, the recombination profile can be assessed by scanning Kelvin probe microscopy (SKPM). However, surface potentials as measured by...
article 2009
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Mathijssen, S.G.J. (author), Smits, E.C.P. (author), van Hal, P.A. (author), Wondergem, H.J. (author), Ponomarenko, S.A. (author), Moser, A. (author), Resel, R. (author), Bobbert, P.A. (author), Kemerink, M. (author), Janssen, R.A.J. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)
The mobility of self-assembled monolayer field-effect transistors (SAMFETs) traditionally decreases dramatically with increasing channel length. Recently, however, SAMFETs using liquid-crystalline molecules have been shown to have bulk-like mobilities that are virtually independent of channel length. Here, we reconcile these scaling relations by...
article 2009
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Kemerink, M. (author), Charrier, S.H. (author), Smits, E.C.P. (author), Mathijssen, S.G.J. (author), de Leeuw, D.M. (author), Janssen, R.A.J. (author), TNO Industrie en Techniek (author)
article 2008
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Stallinga, P. (author), Benvenho, A.R.V. (author), Smits, E.C.P. (author), Mathijssen, S.G.J. (author), Colle, M. (author), Gomes, H.L. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)
The electron and hole mobility of nickel-bis(dithiolene) (NiDT) are determined in a metal– insulator–semiconductor (MIS) structure using admittance spectroscopy. The relaxation times found in the admittance spectra are attributed to the diffusion time of carriers to reach the insulator interface and via Einstein’s relation this yields the...
article 2008
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Smits, E.C.P. (author), Mathijssen, S.G.J. (author), van Hal, P.A. (author), Setayesh, S. (author), Geuns, T.C.T. (author), Mutsaers, K.A.H.A. (author), Cantatore, E. (author), Wondergem, H.J. (author), Werzer, O. (author), Resel, R. (author), Kemerink, M. (author), Kirchmeyer, S. (author), Muzafarov, A.M. (author), Ponomarenko, S.A. (author), de Boer, B. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), TNO Industrie en techniek (author)
Self-assembly—the autonomous organization of components into patterns and structures1—is a promising technology for the mass production of organic electronics. Making integrated circuits using a bottom-up approach involving self-assembling molecules was proposed2 in the 1970s. The basic building block of such an integrated circuit is the self...
article 2008
document
Mathijssen, S.G.J. (author), van Hal, P.A. (author), van den Biggelaar, T.J.M. (author), Smits, E.C.P. (author), de Boer, B. (author), Kemerink, M. (author), Janssen, R.A.J. (author), de Leeuw, D.M. (author)
In organic light-emitting diodes (OLEDs), interface dipoles play an important role in the process of charge injection from the metallic electrode into the active organic layer.[1,2] An oriented dipole layer changes the effective work function of the electrode because of its internal electric field. The differences between the work functions of...
article 2008
document
Smits, E.C.P. (author), Mathijssen, S.G.J. (author), Colle, M. (author), Mank, A.J.G. (author), Bobbert, P.A. (author), Blom, P.W.M. (author), de Boer, B. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)
Validation of models for charge transport in organic transistors is fundamentally important for their technological use. Usually current-voltage measurements are performed to investigate organic transistors. In situ scanning Kelvin probe microscopy measurements provide a powerful complementary technique to distinguish between models based on...
article 2007
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Mathijssen, S.G.J. (author), Cölle, M. (author), Gomes, H. (author), Smits, E.C.P. (author), de Boer, B. (author), McCulloch, I. (author), Bobbert, P.A. (author), de Leeuw, D.M. (author)
Progress in environmental stability and processability, and the increase of the field-effect mobility of organic semiconductors has triggered their use as the active element in microelectronic devices. The advantages of their application are the easy processing, for example, spin-coating and ink-jet printing, without a temperature hierarchy, and...
article 2006
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