- document
-
Meyer, M. (author), Déprez, C. (author), van Abswoude, T.R. (author), Meijer, I.N. (author), Liu, D. (author), Wang, C.A. (author), Karwal, S. (author), Oosterhout, S.D. (author), Borsoi, F. (author), Sammak, A. (author), Hendrickx, N.W. (author), Scappucci, G. (author), Veldhorst, M. (author)Highly uniform quantum systems are essential for the practical implementation of scalable quantum processors. While quantum dot spin qubits based on semiconductor technology are a promising platform for large-scale quantum computing, their small size makes them particularly sensitive to their local environment. Here, we present a method to...article 2023
- document
-
Zhang, J. (author), Zhebel, E. (author), van den Boom, S.J. (author), Liu, D. (author), Aragon, A.M. (author)In this work, an object-oriented geometric engine is proposed to solve problems with discontinuities, for instance, material interfaces and cracks, by means of unfitted, immersed, or enriched finite element methods (FEMs). Both explicit and implicit representations, such as geometric entities and level sets, are intro duced to describe...article 2022
- document
-
Liu, D. (author), van den Boom, S.J. (author), Simone, A. (author), Aragon, A.M. (author)We propose an enriched finite element formulation to address the computational modeling of contact problems and the cou pling of non-conforming discretizations in the small deformation setting. The displacement field is augmented by enriched terms that are associated with generalized degrees of freedom collocated along non-conforming interfaces...article 2022
- document
- Visschers, F.L.L. (author), Massaad, J. (author), van Neer, P.L.M.J. (author), Verweij, M.D. (author), Liu, D. (author), Broer, D.J. (author) article 2022
- document
-
Chen, J. (author), Ge, K. (author), Chen, B. (author), Guo, J. (author), Yang, L. (author), Wu, Y. (author), Coletti, G. (author), Liu, H. (author), Li, F. (author), Liu, D. (author), Wang, Z. (author), Xu, Y. (author), Mai, Y. (author)Surface engineering of crystalline silicon (c-Si) is the core of Si-based semiconductor devices. The current commercially available c-Si solar cells achieve this by making use of a conventional thin dielectric film passivation system (TDFPS), including SiO2, Al2O3, SiNx:H and hydrogenated amorphous silicon (a-Si:H) in industry. However, the...article 2019
- document
-
Li, F. (author), Liu, D. (author), Wang, Z. (author), Zhai, J. (author), Zhang, W. (author), Shen, Y. (author), Shi, J. (author), Song, D. (author), Cesar, I. (author), Guillevin, N. (author), Burgers, A.R. (author), Venema, P. (author)IBC Solar cell process was developed based on the same process equipment as used for the Yingli N-type Panda Si solar cell technology. Recombination at surface and metal contact areas as well as contact resistivity were investigated and optimized to get a balance between Voc and FF. Moreover, the IR characteristics at -10V shown homogeneous...conference paper 2018
- document
-
Burgers, A.R. (author), Venema, P. (author), Guillevin, N. (author), Cesar, I. (author), Zhai, jinye (author), Wang, Z. (author), Liu, D. (author), Energieonderzoek Centrum Nederland (author)Together with Yingli Solar and Tempress Systems, ECN accelerates the development of the Mercury IBC technology by implementing its low-cost cell process in a mass production environment. The Mercury solar cell concept based on a bifacial IBC cell design with a front floating emitter (FFE) can now be fully processed on Yinglis pilot line. Pilot...conference paper 2017
- document
-
Bende, E.E. (author), Loffler, J. (author), Zhai, jinye (author), Shi, J. (author), Newman, B.K. (author), Wang, J. (author), Wang, Z. (author), Chen, Y. (author), Liu, D. (author), Energieonderzoek Centrum Nederland (author)Metal wrap through (MWT) technology is an all back contact cell technology where the front emitter contact is extended through a laser-drilled via to the rear cell surface. The vias act as a pathway for current under both forward and reverse bias voltage conditions. Through engineering the vias, we tune the resistivity under reverse bias voltage...conference paper 2016
- document
-
Blatter, B.M. (author), Opdebeeck, R. (author), van den Heuvel, S.G. (author), Eeckelaert, L.E. (author), Treutlein, D. (author), de Kraker, H. (author), Pwalowska, Z. (author), Roman-Liu, D. (author), Hollander, A. (author)Presented in Open Session: Surveillance and prevention policies.conference paper 2010