Atmospheric spatial atomic-layer-deposition of Zn(O,S) buffer layer for flexible Cu(In,Ga)Se2 solar cells: From lab-scale to large area roll to roll processing

In this manuscript we present the first successful application of a spatial atomic-layer-deposition process to thin film solar cells. Zn(O,S) has been grown by spatial atomic layer deposition (S-ALD) at atmospheric pressure and applied as buffer layer in rigid and flexible CIGS cells by a lab-scale (15×15 cm2) S-ALD set-up. We achieved values of...

Atmospheric spatial atomic-layer-deposition of Zn(O, S) buffer layer for flexible Cu(In, Ga)Se2 solar cells: From lab-scale to large area roll to roll processing

In this manuscript we present the first successful application of a spatial atomic-layer-deposition process to thin film solar cells. Zn(O,S) has been grown by spatial atomic layer deposition (S-ALD) at atmospheric pressure and applied as buffer layer in rigid and flexible CIGS cells by a lab-scale (15x15 cm2) S-ALD set-up. We achieved values of...

Simulation of the fluid structure interaction for an aerostatic bearing and a flexible substrate

The fluid structure interaction for an aerostatic bearing and a substrate is solved numerically by a semi-analytical model, programmed in the software package MATLAB. This semi-analytical model uses a fluidic network of resistances and capacities to solve the pressure field in the bearing channel. These pressures are sent to a mechanical module,...

On the kinetics of spatial atomic layer deposition

Spatial atomic layer deposition (ALD) is a promising technology for high deposition rate and high-throughput ALD that can be used for roll-to-roll and large-area applications. In an ideal spatial ALD reactor, the design of the injector should be tuned to the deposition kinetics of the ALD reaction, requiring an in-depth knowledge of the...

A new concept for spatially-divided Reactive Ion Etching with ALD-based passivation

Concept of Spatially-Divided Deep Reactive Ion Etching of Si using Oxide Atomic Layer Deposition in the Passivation Cycle

Conventional Deep Reactive Ion Etching (DRIE) is a plasma etch process with alternating half-cycles of 1) Si-etching with SF6 to form gaseous SiFx etch products, and 2) passivation with C4F8 that polymerizes as a protecting fluorocarbon deposit on the sidewalls and bottom of the etched features. In this work we report on a novel alternative and...

A new concept for spatially divided Deep Reactive Ion Etching with ALD-based passivation

Conventional Deep Reactive Ion Etching (DRIE) is a plasma etch process with alternating half-cycles of 1) Si-etching with SF6 to form gaseous SiFx etch products, and 2) passivation with C4F8 that polymerizes as a protecting fluorocarbon deposit on the sidewalls and bottom of the etched features. In this work we report on a novel alternative and...

Equipment for atmospheric, spatial atomic layer deposition in roll-to-roll processes

A novel type of reactor has been designed for atmospheric atomic layer deposition (ALD) on flexible substrates. In the reactor, a flexible substrate slowly advances around a fast rotating drum. Gas bearing technology is used to prevent physical contact between the flexible substrate and the drum, and to separate reactants to enable a spatial ALD...

Development of an innovative Z-Theta direct drive actuator

Thermomechanical design of a temperature controlled heat shield

Thermomechanical system analysis plays an important role in the design of thermally loaded machine components. Specifications on maximum allowed temperature or material stress may be leading in the design process. Precision machines also have narrow specifications on shape tolerance and position accuracy. Extreme conditions like high heat loads...