Searched for: author%3A%22Kemerink%2C+M.%22
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Andersson, O. (author), Maas, J. (author), Gelinck, G. (author), Kemerink, M. (author)
Electronic ratchets use a periodic potential with broken inversion symmetry to rectify undirected (electromagnetic, EM) forces and can in principle be a complement to conventional diode-based designs. Unfortunately, ratchet devices reported to date have low or undetermined power conversion efficiencies, hampering applicability. Combining...
article 2019
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Khikhlovskyi, V. (author), van Breemen, A.J.J.M. (author), Janssen, R.A.J. (author), Gelinck, G.H. (author), Kemerink, M. (author)
Solution-processed organic ferroelectric resistive switches could become the long-missing non-volatile memory elements in organic electronic devices. To this end, data retention in these devices should be characterized, understood and controlled. First, it is shown that the measurement protocol can strongly affect the 'apparent' retention time...
article 2016
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Pilet, N. (author), Khikhlovskyi, V. (author), van Breemen, A.J.J.M. (author), Michels, J.J. (author), Kemerink, M. (author), Gelinck, G. (author), Warnicke, P. (author), Bernard, L. (author)
Organic electronics is becoming more and more important because the low level of fabrication and deposition complexity even at large scale makes it a good candidate for future low cost technological product development. P(VDF-TrFE) is a co-polymer of special interest due its ferroelectric property enabling usage in re-programmable non-volatile...
article 2016
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Lee, J. (author), van Breemen, A.J.J.M. (author), Khikhlovskyi, V. (author), Kemerink, M. (author), Janssen, R.A.J. (author), Gelinck, G.H. (author)
We demonstrate multilevel data storage in organic ferroelectric resistive memory diodes consisting of a phase-separated blend of P(VDF-TrFE) and a semiconducting polymer. The dynamic behaviour of the organic ferroelectric memory diode can be described in terms of the inhomogeneous field mechanism (IFM) model where the ferroelectric components...
article 2016
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Lenz, T. (author), Zhao, D. (author), Richardson, G. (author), Katsouras, I. (author), Asadi, K. (author), Glasser, G. (author), Zimmermann, S.T. (author), Stingelin, N. (author), Roelofs, W.S.C. (author), Kemerink, M. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
Ferroelectric nanostructures offer a promising route for novel integrated electronic devices such as non-volatile memories. Here we present a facile fabrication route for ferroelectric capacitors comprising a linear array of the ferroelectric random copolymer of vinylidenefluoride and trifluoroethylene (P(VDFTrFE)) interdigitated with the...
article 2015
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van Breemen, A.J.J.M. (author), Zaba, T. (author), Khikhlovskyi, V. (author), Michels, J. (author), Janssen, R. (author), Kemerink, M. (author), Gelinck, G. (author)
The polymer phase separation of P(VDF-TrFE):F8BT blends is studied in detail. Its morphology is key to the operation and performance of memory diodes. In this study, it is demonstrated that it is possible to direct the semiconducting domains of a phase-separating mixture of P(VDF-TrFE) and F8BT in a thin film into a highly ordered 2D lattice by...
article 2015
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Khikhlovskyi, V. (author), van Breemen, A.J.J.M. (author), Michels, J.J. (author), Janssen, R.A.J. (author), Gelinck, G.H. (author), Kemerink, M. (author)
In many organic electronic devices functionality is achieved by blending two or more materials, typically polymers or molecules, with distinctly different optical or electrical properties in a single film. The local scale morphology of such blends is vital for the device performance. Here, a simple approach to study the full 3D morphology of...
article 2015
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Khikhlovskyi, V. (author), Wang, R. (author), van Breemen, A.J.J.M. (author), Gelinck, G.H. (author), Janssen, R.A.J. (author), Kemerink, M. (author)
Organic ferroelectric resistive switches function by grace of nanoscale phase separation in a blend of a semiconducting and a ferroelectric polymer that is sandwiched between metallic electrodes. In this work, various scanning probe techniques are combined with numerical modeling to unravel their operational mechanism. Resistive switching is...
article 2014
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van Breemen, A.J.J.M. (author), van der Steen, J.L. (author), van Heck, G. (author), Wang, R. (author), Khiklovskyi, V. (author), Kemerink, M. (author), Gelinck, G.H. (author)
In this paper, we demonstrate a scalable and low-cost memory technology using a phase separated blend of a ferroelectric polymer and a semiconducting polymer as data storage medium on thin, flexible polyester foils of only 25um thickness. By sandwiching this polymer blend film between rows and columns of metal electrode lines where each...
article 2014
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Khikhlovskyi, V. (author), Gorbunov, A.V. (author), van Breemen, A.J.J.M. (author), Janssen, R.A.J. (author), Gelinck, G.H. (author), Kemerink, M. (author)
Storage of multiple bits per element is a promising alternative to miniaturization for increasing the information data density in memories. Here we introduce a multi-bit organic ferroelectric-based non-volatile memory with binary readout from a simple capacitor structure. The functioning of our multi-bit concept is quite generally applicable and...
article 2013
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van de Ruit, K. (author), Cohen, R.I. (author), Bollen, D. (author), van Mol, T. (author), Yerushalmi-Rozen, R. (author), Janssen, R.A.J. (author), Kemerink, M. (author)
The mechanism and magnitude of the in-plane conductivity of poly(3,4-ethy-lenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin films is determined using temperature dependent conductivity measurements for various PEDOT:PSS weight ratios with and without a high boiling solvent (HBS). Without the HBS the in-plane conductivity of PEDOT:PSS...
article 2013
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van de Ruit, K. (author), Katsouras, I. (author), Bollen, D. (author), Van Mol, T. (author), Janssen, R.A.J. (author), de Leeuw, D.M. (author), Kemerink, M. (author)
For its application as transparent conductor in light-emitting diodes and photovoltaic cells, both the in-plane and out-of-plane conductivity of PEDOT:PSS are important. However, studies into the conductivity of PEDOT:PSS rarely address the out-of-plane conductivity and those that do, report widely varying results. Here a systematic study of the...
article 2013
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Li, L. (author), van Breemen, A.J.J.M. (author), Khikhlovskyi, V. (author), Smits, E.C.P. (author), Kemerink, M. (author), Broer, D.J. (author), Gelinck, G.H. (author)
article 2012
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Gholamrezaie, F. (author), Andringa, A.-M. (author), Roelofs, W.S.C. (author), Neuhold, A. (author), Kemerink, M. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
The threshold voltage is an important property of organic field-effect transistors. By applying a self-assembled monolayer (SAM) on the gate dielectric, the value can be tuned. After electrical characterization, the semiconductor is delaminated. The surface potentials of the revealed SAM perfectly agree with the threshold voltages, which...
article 2012
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Kemerink, M. (author), Asadi, K. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field modulates the charge injection from a metallic...
article 2012
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Germs, W.C. (author), Adriaans, W.H. (author), Tripathi, A.K. (author), Roelofs, W.S.C. (author), Cobb, B. (author), Janssen, R.A.J. (author), Gelinck, G.H. (author), Kemerink, M. (author)
We investigate the mechanism of charge transport in indium gallium zinc oxide (a-IGZO), an amorphous metal-oxide semiconductor. We measured the field-effect mobility and the Seebeck coefficient (S=ΔV/ΔT) of a-IGZO in thin-film transistors as a function of charge-carrier density for different temperatures. Using these transistors, we further...
article 2012
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Asadi, K. (author), Li, M. (author), Blom, P.W.M. (author), Kemerink, M. (author), de Leeuw, D.M. (author)
Memory is a prerequisite for many electronic devices. Organic non-volatile memory devices based on ferroelectricity are a promising approach towards the development of a low-cost memory technology based on a simple cross-bar array. In this review article we discuss the latest developments in this area with a focus on the most promising opto...
article 2011
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Sharma, A. (author), Mathijssen, S.G.J. (author), Smits, E.C.P. (author), Kemerink, M. (author), de Leeuw, D.M. (author), Bobbert, P.A. (author), TNO Defensie en Veiligheid (author)
Organic field-effect transistors exhibit operational instabilities involving a shift of the threshold gate voltage when a gate bias is applied. For a constant gate bias the threshold voltage shifts toward the applied gate bias voltage, an effect known as the bias-stress effect. Here, we report on a detailed experimental and theoretical study of...
conference paper 2010
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Spijkman, M. (author), Mathijssen, S.G.J. (author), Smits, E.C.P. (author), Kemerink, M. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)
A dual gate transistor was fabricated using a self-assembled monolayer as the semiconductor. We show the possibility of processing a dielectric on top of the self-assembled monolayer without deteriorating the device performance. The two gates of the transistor accumulate charges in the monomolecular transport layer and artifacts caused by the...
article 2010
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Charrier, D.S.H. (author), de Vries, T. (author), Mathijssen, S.G.J. (author), Geluk, E.-J. (author), Smits, E.C.P. (author), Kemerink, M. (author), Janssen, R.A.J. (author), TNO Industrie en Techniek (author)
In ambipolar organic field effect transistors (OFET) the shape of the channel potential is intimately related to the recombination zone width W, and hence to the electron–hole recombination strength. Experimentally, the recombination profile can be assessed by scanning Kelvin probe microscopy (SKPM). However, surface potentials as measured by...
article 2009
Searched for: author%3A%22Kemerink%2C+M.%22
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