Searched for: author%3A%22Katsouras%2C+I.%22
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Akkerman, H. (author), Peeters, B. (author), van Breemen, A. (author), Shanmugam, S. (author), Ugalde Lopez, L. (author), Tordera, D. (author), van de Ketterij, R. (author), Delvitto, E. (author), Malinowski, P. (author), Ke, T.-H. (author), De Roose, F. (author), Moreno Hagelsieb, L. (author), Katsouras, I. (author), Kronemeijer, A.J. (author), Meulenkamp, E. (author), Gelinck, G. (author)
In recent years there is an increasing interest to integrate optical sensing in mobile displays, for instance, for biometric fingerprint scanning functionality. There are several routes to incorporate optical fingerprint functionality within the full display area, each with their own benefits and challenges. Here we investigate the different...
conference paper 2021
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Oliveira A.M., (author), Akkerman H.B., (author), Braccini S., (author), Breemen A.J.J.M. van, (author), Manzano L.G., (author), Heracleous N., (author), Katsouras I., (author), Leidner J., (author), Murtas F., (author), Peeters B., (author), Silari M., (author)
Quality Assurance (QA) in hadron therapy is crucial to ensure safe and accurate dose delivery to patients. This can be achieved with fast, reliable and high-resolution detectors. In this paper, we present a novel solution that combines a triple Gas Electron Multiplier (GEM) and a highly pixelated readout based on a matrix of organic photodiodes...
article 2021
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Tordera, D. (author), Peeters, B. (author), Delvitto, E. (author), Shanmugam, S. (author), Maas, J. (author), de Riet, J. (author), Verbeek, R. (author), van de Laar, R. (author), Bel, T. (author), Haas, G. (author), Ugalde, L. (author), van Breemen, A. (author), Katsouras, I. (author), Kronemeijer, A.J. (author), Akkerman, H. (author), Meulenkamp, E. (author), Gelinck, G. (author)
We combine a low dark current and high-detectivity near-infrared (NIR)-sensitive organic photodetector with a high-resolution 508 pixels per inch (ppi) oxide thin-film transistor (TFT) backplane to create a large-area thin NIR detector, using processes that are compatible with flat-panel display fabrication. The detector is characterized showing...
article 2020
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Dogan, T. (author), de Riet, J. (author), Bel, T. (author), Katsouras, I. (author), Witczak, L. (author), Kronemeijer, A.J. (author), Janssen, R.A. (author), Gelinck, G.H. (author)
Sub-micrometer thin-film transistors (TFTs) are realized using multi-level imprint lithography. Amorphous indium gallium zinc oxide (α-IGZO) TFTs with channel lengths as small as 0.7 μm, field-effect mobility of 10 cm2 V−1 s−1 and on/off ratio of circa 107 were integrated into a 1000-pixels per inch (ppi) TFT backplane array. The reduction of...
article 2020
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Wang, X. (author), Wilson, P.R. (author), Leite, R.B. (author), Chen, G. (author), Freitas, H. (author), Asadi, K. (author), Smits, E.C.P. (author), Katsouras, I. (author), Rocha, P.R.F. (author)
Generating electricity from low-frequency mechanical agitations produced by ocean waves, plants, or human motion is emerging as a key, environmentally friendly technology in combating harmful emissions caused by burning fossil fuels. The electric pulses generated by the appropriate transducers, such as triboelectric or piezoelectric generators,...
article 2020
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Dogan, T. (author), de Riet, J. (author), Bel, T. (author), Verbeek, R. (author), Katsouras, I. (author), Meulenkamp, E. (author), Gelinck, G. (author), Kronemeijer, A.J. (author)
article 2020
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Katsouras, I. (author), Frijters, C. (author), Poodt, P. (author), Gelinck, G. (author), Kronemeijer, A.J. (author)
Indium gallium zinc oxide (IGZO) is deposited using plasma‐enhanced spatial atomic layer deposition (sALD) on substrates as large as 32 × 35 cm2. Excellent uniformity and thickness control leads to high‐performing and stable coplanar top‐gate self‐aligned (SA) thin‐film transistors (TFTs). The integration of a sALD‐deposited aluminum oxide...
article 2019
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Katsouras, I. (author), Frijters, C. (author), Poodt, P. (author), Gelinck, G. (author), Kronemeijer, A.J. (author)
Indium gallium zinc oxide (IGZO) is deposited using plasma-enhanced spatial atomic layer deposition (sALD) on substrates as large as 32 × 35 cm 2 . Excellent uniformity and thickness control leads to high-performing and stable coplanar top-gate self-aligned (SA) thin-film transistors (TFTs). The integration of a sALD-deposited aluminum oxide...
article 2019
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Zhao, D. (author), Lenz, T. (author), Gelinck, G.H. (author), Groen, P. (author), Damjanovic, D. (author), de Leeuw, D.M. (author), Katsouras, I. (author)
Depolarization in ferroelectric materials has been studied since the 1970s, albeit quasi-statically. The dynamics are described by the empirical Merz law, which gives the polarization switching time as a function of electric field, normalized to the so-called activation field. The Merz law has been used for decades; its origin as domain-wall...
article 2019
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Kronemeijer, A.J. (author), Katsouras, I. (author), Poodt, P. (author), Akkerman, H.B. (author), van Breemen, A.J.J.M. (author), Gelinck, G.H. (author)
We present recent developments on flexible a-IGZO TFT technology scaling in terms of TFT channel length and operating voltage, as well as manufacturing cost optimization with a focus on R2R processing compatibility. We present progress on the relevant technology building blocks; (i) R2R compatible TFT architecture, (ii) (multilevel) nanoimprint...
conference paper 2018
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Illiberi, A. (author), Katsouras, I. (author), Gazibegovic, S. (author), Cobb, B. (author), Nekovic, E. (author), van Boekel, W. (author), Frijters, C. (author), Maas, J. (author), Roozeboom, F. (author), Creyghton, Y. (author), Gelinck, G. (author)
In this manuscript, the authors investigate the growth of indium zinc oxide, indium zinc oxide (InZnO, IZO) as a channel material for thin-film transistors. IZO is grown at atmospheric pressure and a high deposition rate using spatial atomic layer deposition (S-ALD). By varying the ratio of diethylzinc and trimethylindium vapor, the In/(In þ Zn)...
article 2018
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Zhao, D. (author), Lenz, T. (author), Katsouras, I. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
In this work, the macroscopic polarization of a ferroelectric capacitor is correlated with the local domain morphology. To this end, a ferroelectric capacitor of the random copolymer poly(vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] is poled to a set polarization state in a Sawyer-Tower setup. After chemically removing the top electrode,...
article 2017
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Illiberi, A. (author), Katsouras, I. (author), Gazibegovic, S. (author), Cobb, B. (author), Nekovic, E. (author), van Boekel, W. (author), Frijters, C. (author), Maas, J. (author), Roozeboom, F. (author), Creyghton, Y. (author), Poodt, P. (author), Gelinkck, G. (author)
public lecture 2017
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Illiberi, A. (author), Katsouras, I. (author), Gazibegovic, S. (author), Cobb, B. (author), Nekovic, E. (author), van Boekel, W. (author), Frijters, C. (author), Maas, J. (author), Roozeboom, F. (author), Creyghton, Y. (author), Poodt, P. (author), Gelinck, G. (author)
public lecture 2017
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Martín, J. (author), Zhao, D. (author), Lenz, T. (author), Katsouras, I. (author), de Leeuw, D.M. (author), Stingelin, N. (author)
Poly(vinylidene fluoride) (PVDF) has long been regarded as an ideal piezoelectric 'plastic' because it exhibits a large piezoelectric response and a high thermal stability. However, the realization of piezoelectric PVDF elements has proven to be problematic due to, amongst other reasons, the lack of industrially scalable methods to process PVDF...
article 2017
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Wang, J. (author), Di Giacomo, F. (author), Brüls, J. (author), Gorter, H. (author), Katsouras, I. (author), Groen, P. (author), Janssen, R.A.J. (author), Andriessen, R. (author), Galagan, Y. (author), Holst Centre-TNO, Eindhoven, The Netherlands Faculty of Aerospace Engineering, Delft University of Technology, Delft, The Netherlands Eindhoven University of Technology, Solliance, Eindhoven, The Netherlands (author)
Perovskite solar cells attract a lot attention as alternative energy sources for the future energy market. With the remarkable lab-scale achievements, the investigations into a high-throughput large-scale production of perovskite devices are now on the agenda. The first step towards mass manufacturing should be a replacement of toxic solvents...
article 2017
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Mione, M.A. (author), Katsouras, I. (author), Creyghton, Y. (author), van Boekel, W. (author), Maas, J. (author), Gelinck, G. (author), Roozeboom, F. (author), Illiberi, A. (author)
High permittivity (high-k) materials have received considerable attention as alternatives to SiO2 for CMOS and low-power flexible electronics applications. In this study, we have grown high-quality ZrO2 by using atmospheric-pressure plasma-enhanced spatial ALD (PE-sALD), which, compared to temporal ALD, offers higher effective deposition rates...
article 2017
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Mione, M.A. (author), Katsouras, I. (author), Creyghton, Y. (author), van Boekel, W. (author), Maas, J. (author), Gelinck, G. (author), Roozeboom, F. (author), Illiberi, A. (author)
High permittivity (high-k) materials have received considerable attention as alternatives to SiO2 for CMOS and low-power flexible electronics applications. In this study, we have grown high-quality ZrO2 by using atmospheric-pressure plasma-enhanced spatial ALD (PE-sALD), which, compared to temporal ALD, offers higher effective deposition rates...
article 2017
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Lenz, T. (author), Hummel, R. (author), Katsouras, I. (author), Groen, W.A. (author), Nijemeisland, M. (author), Ruemmler, R. (author), Schäfer, M.K.E. (author), de Leeuw, D.M. (author)
Recently reported piezoresponse force microscopy (PFM) measurements have proposed that porcine aortic walls are ferroelectric. This finding may have great implications for understanding biophysical properties of cardiovascular diseases such as arteriosclerosis. However, the complex anatomical structure of the aortic wall with different...
article 2017
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van der Kaap, N.J. (author), Katsouras, I. (author), Asadi, K. (author), Blom, P.W.M. (author), Koster, L.J.A. (author), de Leeuw, D.M. (author)
The current density-voltage (J-V) characteristics of hole-only diodes based on poly(2-methoxy, 5-(2′ ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV) were measured at a wide temperature and field range. At high electric fields the temperature dependence of the transport vanishes, and all J-V sweeps converge to a power law. Nuclear tunneling...
article 2016
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