Searched for: author%3A%22Janssen%2C+J.P.B.%22
(1 - 10 of 10)
document
Ushakov, A. (author), Velthuis, J.F.M. (author), Koster, N.B. (author), Janssen, J.P.B. (author)
The new generation compact X-ray source for semiconductor metrology requires a brilliance that is higher than existing technology can offer. In this report, we propose a new X-ray source where an electron beam is focused on a rotating liquid metal anode. We assume that high brilliance emission can be achieved with power densities up to 10 MW/mm2...
conference paper 2020
document
Bekman, H.H.P.T. (author), Dekker, M.F. (author), Ebeling, R.P. (author), Janssen, J.P.B. (author), Koster, N.B. (author), Meijlink, J.R. (author), Molkenboer, F.T. (author), Nicolai, K. (author), van Putten, M. (author), Rijnsent, C.G.J. (author), Storm, A.J. (author), Stortelder, J.K. (author), Wu, C.C. (author), de Zanger, R.M.S. (author)
Adoption of EUV lithography for high-volume production is accelerating. TNO has been involved in lifetime studies from the beginning of the EUV alpha demo tools. One of the facilities for these studies is the EUV Beam Line (EBL1) designed and installed at TNO, in close cooperation with Carl Zeiss. There was a desire to improve on the performance...
conference paper 2019
document
van Veldhoven, J. (author), te Sligte, E. (author), Janssen, J.P.B. (author)
Most ion sources that produce high-flux hydrogen ion beams perform best in the high energy range (keV). Alternatively, some plasma sources produce very-lowenergy ions (<< 10 eV). However, in an intermediate energy range of 10-200 eV, no hydrogen ion sources were found that produce high-flux beams. We believe such a source would be of interest to...
public lecture 2016
document
Koster, N.B. (author), Geluk, C.P.E.C. (author), Versloot, T.W. (author), Janssen, J.P.B. (author), Fleming, Y. (author), Wirtz, T. (author)
We report on our investigation of dry cleaning of reticles with a microwave induced hydrogen plasma on dummy reticles. The dummy reticles were manufactured with 70 nm ALD grown TaN on a Ru surface and test structures were patterned with lines and spaces ranging between 250 and 400 nm. After processing the test structures were contaminated with e...
conference paper 2014
document
van Heijningen, M. (author), Janssen, J.P.B. (author), van Vliet, F.E. (author), TNO Defensie en Veiligheid (author)
Apart from delivering very high output powers, GaN can also be used to realize robust receiver components, such as Low Noise Amplifiersand Switches. This paper presents the designand measurement results of two GaN X-band switch and LNA MMICs, designed for integration in a radar front end. The switch design shows a 1 dB compression point of 43...
article 2009
document
TNO Defensie en Veiligheid (author), Janssen, J.P.B. (author), van Heijningen, M. (author), Visser, G.C. (author), Rodenburg, M. (author), Johnson, H.K. (author), Uren, M.J. (author), Morvan, E. (author), van Vliet, F.E. (author)
Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realise robust receiver components. This paper presents the design, realisation and measurement of two robust AlGaN/GaN low noise amplifiers. The two versions have been designed in the Alcatel-Thales III-V lab AlGaN/GaN...
conference paper 2009
document
Janssen, J.P.B. (author), van Dijk, R. (author), de Boer, A. (author), van Vliet, F.E. (author), TNO Defensie en Veiligheid (author)
The increasing demand of frequency bandwidth for broadband wireless applications results in surveys to new frequency bands, suitable for high data-rate applications. The 60 GHz band is one of the candidates for this type of applications. Due to the high operating frequency the 60 GHz topic is challenging for IC design and measurement....
conference paper 2008
document
TNO Defensie en Veiligheid (author), Janssen, J.P.B. (author), Monni, S. (author), Maas, A.P.M. (author), van Vliet, F.E. (author)
Front-end power overload protection is a vital issue in any electro-magnetic sensor. The issues around active electronically-steered arrays are more recent and pose new threats. Different categories of threats can damage the sensitive electronics in the phased-array radar, like hostile high power electro-magnetic (HPEM) pulses or the radar’s own...
conference paper 2008
document
TNO Defensie en Veiligheid (author), Janssen, J.P.B. (author), van Heijningen, M. (author), Provenzano, G. (author), Visser, G.C. (author), Morvan, E. (author), van Vliet, F.E. (author)
Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realize robust receiver components. This paper presents the design and measurement of a robust AlGaN/GaN Low Noise Amplifier and Transmit/Receive Switch MMIC. Two versions of both MMICs have been designed in the Alcatel...
conference paper 2008
document
TNO Defensie en Veiligheid (author), Maas, A.P.M. (author), Janssen, J.P.B. (author), van Vliet, F.E. (author)
A set of X-band absorptive limiter GaAs MMICs has been designed and realised using both the PPH25x foundry process from UMS and the PP50-10 process from WIN semiconductors. The innovative limiter concepts have been extensively characterised by both pulsed and CW measurements. Both passive and active topologies have been implemented. The passive...
conference paper 2007
Searched for: author%3A%22Janssen%2C+J.P.B.%22
(1 - 10 of 10)