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- Bouva, M. (author), Heijnen, M.L. (author), Jacobs, B. (author), van der Ploeg, C.P.B. (author), Gille, J. (author), Gulmans, V. (author), Verschoof-Puite, R. (author), de Winter-de Groot, K. (author) public lecture 2021
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van Wanum, M. (author), Lia, E. (author), de Boer, L. (author), Bronts, L.Q. (author), Marien Rodenburg, M. (author), Jacobs, B. (author), Inácio, A.I. (author), van Heijningen, M. (author), van Vliet, F.E. (author)This paper describes a Ku-band up-converter for low cost satellite Machine to Machine (M2M) applications. The up-converter comprises a heterodyne sliding-IF architecture. This converts the baseband input signal (0 – 20 MHz) to the RF output signal (13.75 – 14.75 GHz). The necessary Local Oscillator (LO) signals are generated by an on-chip...conference paper 2020
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Jacobs, B. (author)CO2 emission in the Netherlands must be reduced by 40% in 2030 compared to 2015. A large contributor to the CO2 emissions is the heating sector. To meet these emission goals the heating sector needs to achieve a reduction of 20 megatons CO2 by 2030. A promising alternative heat source in the Netherlands is geothermal energy which can meet 23% of...doctoral thesis 2020
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- Hoepman, J.H. (author), Jacobs, B. (author) bookPart 2011
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Batina, L. (author), Hoepman, J.H. (author), Jacobs, B. (author), Mostowski, W. (author), Vullers, P. (author), TNO Informatie- en Communicatietechnologie (author)This paper describes an elementary protocol to prove possession of anonymous credentials together with its implementation on smart cards. The protocol uses self-blindable attribute certificates represented as points on an elliptic curve (which are stored on the card). These certificates are verified on the reader-side via a bilinear pairing....bookPart 2010
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TNO Fysisch en Elektronisch Laboratorium (author), Kraemer, M.C.J.C.M. (author), Jacobs, B. (author), Kwaspen, J.J.M. (author), Suijker, E.M. (author), de Hek, A.P. (author), Karouta, F. (author), Kaufmann, L.M.F. (author), Hoskens, R.C.P. (author)We present dispersion free pulsed current voltage (I-V) and radio frequency (RF) power results of undoped and doped AlGaN/GaN HEMTs on sapphire and SiC substrates. The most significant processing step leading to these results is the application of a reactive ion etching (RIE) argon (Ar) plasma (10sccm, 40mTorr, 20W, t=30s, DC bias = -167V, 20gr....conference paper 2004