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Roozeboom, F. (author), Ehm, D.H. (author), Illiberi, A. (author), Becker, M. (author), te Sligte, E. (author), Creijghton, Y.L.M. (author)A method for at least partially removing a contamination layer (24) from an optical surface (14a) of an optical element (14) that reflects EUV radiation includes: performing an atomic layer etching process for at least partially removing the contamination layer (24) from the optical surface (14a), which, in tum, includes: exposing the...patent 2021
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- Roozeboom, F. (author), de Gendt, S. (author), Dendooven, J. (author), Elam, J.W. (author), van der Straten, O. (author), Liu, C. (author), Sundaram, G. (author), Illiberi, A. (author) conference paper 2019
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Illiberi, A. (author), Frijters, C. (author), Ruth, M. (author), Bermaud, D. (author), Poodt, P. (author), Roozeboom, F. (author), Bolt, J.P. (author)Zinc oxysulfide (ZnOS) is synthesized at atmospheric pressure in a laboratory-scale spatial atomic layer deposition setup by sequentially exposing the substrate to diethyl zinc and an H2O/H2S mixture, separated by a nitrogen gas curtain. The co-injection of H2O and H2S vapors in the same deposition zone enables an accurate control of the S/(O +...article 2018
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Shi, W. (author), Theelen, M.J. (author), Gevaerts, V.S. (author), Illiberi, A. (author), Barreau, N. (author), Butterling, M. (author), Schut, H. (author), Egger, W. (author), Dickmann, M. (author), Hugenschmidt, C. (author), Zeman, M. (author), Bruck, E. (author), Eijt, S.W.H. (author)Positron annihilation depth-profiling is used as an innovative tool to monitor the evolution of vacancy defects in two series of ZnO:Al transparent conductive oxide (TCO) layers for Cu(In,Ga)Se2 (CIGS) solar cells under accelerated degradation at 85 °C/85% relative humidity. The first series of ZnO:Al layers are deposited directly on flat glass...article 2018
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Illiberi, A. (author), Katsouras, I. (author), Gazibegovic, S. (author), Cobb, B. (author), Nekovic, E. (author), van Boekel, W. (author), Frijters, C. (author), Maas, J. (author), Roozeboom, F. (author), Creyghton, Y. (author), Gelinck, G. (author)In this manuscript, the authors investigate the growth of indium zinc oxide, indium zinc oxide (InZnO, IZO) as a channel material for thin-film transistors. IZO is grown at atmospheric pressure and a high deposition rate using spatial atomic layer deposition (S-ALD). By varying the ratio of diethylzinc and trimethylindium vapor, the In/(In þ Zn)...article 2018
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- Frijters, C. (author), van den Bruele, F. (author), Grob, F. (author), Illiberi, A. (author), Creyghton, Y. (author), Roozeboom, F. (author), Poodt, P. (author) public lecture 2017
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- Illiberi, A. (author), Katsouras, I. (author), Gazibegovic, S. (author), Cobb, B. (author), Nekovic, E. (author), van Boekel, W. (author), Frijters, C. (author), Maas, J. (author), Roozeboom, F. (author), Creyghton, Y. (author), Poodt, P. (author), Gelinkck, G. (author) public lecture 2017
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- Illiberi, A. (author), Katsouras, I. (author), Gazibegovic, S. (author), Cobb, B. (author), Nekovic, E. (author), van Boekel, W. (author), Frijters, C. (author), Maas, J. (author), Roozeboom, F. (author), Creyghton, Y. (author), Poodt, P. (author), Gelinck, G. (author) public lecture 2017
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Mione, M.A. (author), Katsouras, I. (author), Creyghton, Y. (author), van Boekel, W. (author), Maas, J. (author), Gelinck, G. (author), Roozeboom, F. (author), Illiberi, A. (author)High permittivity (high-k) materials have received considerable attention as alternatives to SiO2 for CMOS and low-power flexible electronics applications. In this study, we have grown high-quality ZrO2 by using atmospheric-pressure plasma-enhanced spatial ALD (PE-sALD), which, compared to temporal ALD, offers higher effective deposition rates...article 2017
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Frijters, C.H. (author), Bolt, P.J. (author), Poodt, P. (author), Knaapen, R. (author), van den Brink, J. (author), Ruth, M. (author), Bremaud, D. (author), Illiberi, A. (author)In this manuscript we present the first successful application of a spatial atomic-layer-deposition process to thin film solar cells. Zn(O,S) has been grown by spatial atomic layer deposition (S-ALD) at atmospheric pressure and applied as buffer layer in rigid and flexible CIGS cells by a lab-scale (15×15 cm2) S-ALD set-up. We achieved values of...conference paper 2017
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- Creyghton, Y. (author), Illiberi, A. (author), Roozeboom, F. (author) public lecture 2017
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Mione, M.A. (author), Katsouras, I. (author), Creyghton, Y. (author), van Boekel, W. (author), Maas, J. (author), Gelinck, G. (author), Roozeboom, F. (author), Illiberi, A. (author)High permittivity (high-k) materials have received considerable attention as alternatives to SiO2 for CMOS and low-power flexible electronics applications. In this study, we have grown high-quality ZrO2 by using atmospheric-pressure plasma-enhanced spatial ALD (PE-sALD), which, compared to temporal ALD, offers higher effective deposition rates...article 2017
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Frijters, C.H. (author), Bolt, P.J. (author), Poodt, P.W.G. (author), Knaapen, R. (author), van den Brink, J. (author), Ruth, M. (author), Bremaud, D. (author), Illiberi, A. (author)In this manuscript we present the first successful application of a spatial atomic-layer-deposition process to thin film solar cells. Zn(O,S) has been grown by spatial atomic layer deposition (S-ALD) at atmospheric pressure and applied as buffer layer in rigid and flexible CIGS cells by a lab-scale (15x15 cm2) S-ALD set-up. We achieved values of...conference paper 2016
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- Frijters, C. (author), Bolt, P.J. (author), Poodt, P. (author), Roozeboom, F. (author), Illiberi, A. (author) public lecture 2016
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Creyghton, Y. (author), Illiberi, A. (author), Mione, M. (author), van Boekel, W. (author), Debernardi, N. (author), Seitz, M. (author), van den Bruele, F. (author), Poodt, P. (author), Roozeboom, F. (author)Non-thermal plasma sources are known to lower the operation temperatures and widen the process windows in thermal ALD of thin-film materials. In spatial ALD, novel plasma sources with exceptional dimensional and chemical stability are required to provide the flow geometries optimized for efficient transport and use of radicals (O, N, H, OH, NH,...conference paper 2016
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Creyghton, Y. (author), Illiberi, A. (author), Mione, M. (author), van Boekel, W. (author), Debernardi, N. (author), Seitz, M. (author), van den Bruele, F. (author), Poodt, P. (author), Roozeboom, F. (author)Atomic layer deposition by means of spatial separation of reactive gases is emerging as an industrial manufacturing technology. Integration of non-thermal plasma in spatial ALD machines will further expand the process window towards lower operation temperatures and specific materials requiring radicals (O, N, H, OH, NH etc.). Plasma sources with...conference paper 2016
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Scorticati, D. (author), Illiberi, A. (author), Bor, T.C. (author), Eijt, S.W.H. (author), Schut, H. (author), Römer, G.R.B.E. (author), Klein Gunnewiek, M. (author), Lenferink, A.T.M. (author), Kniknie, B.J. (author), Mary Joy, R. (author), Dorenkamper, M.S. (author), de Lange, D.F. (author), Otto, C. (author), Borsa, D. (author), Soppe, W.J. (author), Huis in 't Veld, A.J. (author)Abstract Industrial-grade Al:ZnO thin films, were annealed by UV picosecond laser irradiation in argon atmosphere. A remarkable increase of both the carrier density and electron mobility was measured, while the optical properties in the 400-1000 nm range did not change significantly. We studied the microstructure of the films, in order to...article 2015
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Illiberi, A. (author), Cobb, B. (author), Sharma, A. (author), Grehl, T. (author), Brongersma, H. (author), Roozeboom, F. (author), Gelinck, G. (author), Poodt, P. (author)We have investigated the nucleation and growth of InGaZnO thin films by spatial atmospheric atomic layer deposition. Diethyl zinc (DEZ), trimethyl indium (TMIn), triethyl gallium (TEGa), and water were used as Zn, In, Ga and oxygen precursors, respectively. The vaporized metal precursors have been coinjected in the reactor. The metal composition...article 2015
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Illiberi, A. (author), Frijters, C. (author), Balder, J.E. (author), Poodt, P.W.G. (author), Roozeboom, F. (author)Spatial Atmosperic Atomic Layer Depositon combines the advantages of temporal ALD, i.e. excellent control of film composition and uniformity over large area substrates, with high growth rages (up tot nm/s). In this paper we present a short overview of our research acctivity carried out on S-ALD of functional thin filsm for the front window of...article 2015
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Hoye, R.L.Z. (author), Muñoz-Rojas, D. (author), Nelson, S.F. (author), Illiberi, A. (author), Poodt, P. (author), Roozeboom, F. (author), Macmanus-Driscoll, J.L. (author)Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these...article 2015