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Ke, T.-H. (author), Epimitheas, E. (author), Molina Alvarez, G. (author), Vandenplas, E. (author), Moreno Hagelsieb, L. (author), Akkerman, H. (author), Shanmugam, S. (author), van Breemen, A. (author), Heremans, P. (author), Malinowski, P. (author)We apply a photolithographic patterning process to integrate a green phosphorescent organic light emitting diode (OLED) with a polymer‐based organic photodetector (OPD) side‐by‐side with resolution up to 635 ppi. The characteristics of OLED and OPD before and after patterning are investigated. The crosstalk between OLED and OPD subpixels and the...conference paper 2021
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Ke, T.H. (author), Tsai, C.T. (author), Alvarez, G.M. (author), Vandenplas, E. (author), Kronemeijer, A.J. (author), Malinowski, P.E. (author), Heremans, P. (author)Advances in mobile and wearable electronics have driven the integration of multi-functional devices, such as sensors and display, to enable new form factors in next-generation electronics. In this presentation, we will show our results in photolithography patterning of OLED stack to create islands and holes structure for the sensor in display...conference paper 2021
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Verschueren, L. (author), Ameys, M. (author), Lopez, M.V. (author), Smout, S. (author), Ke, T.H. (author), Vandenplas, E. (author), Kronemeijer, A.J. (author), Heremans, P. (author), Genoe, J. (author), Dehaene, W. (author), Myny, K. (author)This paper presents a new compensation principle using a 2T1C pixel circuit. The implementation shows significant improvement in uniformity for all grey-levels, due to compensation for both VT and β-factor variations. The resulting current variation after compensation in the characterized display area reaches values down to 0.079%.conference paper 2020
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Papadopoulos, N. (author), Steudel, S. (author), Smout, S. (author), Willegems, M. (author), Nag, M. (author), Ameys, M. (author), Kronemeijer, A.J. (author), Heremans, P. (author), Myny, K. (author)This work describes integrated readout electronics for on-panel fingerprint detection, focusing on two key building blocks: charge sense amplifier (CSA) and analog-to-digital converter (ADC). The CSA has been realized in a dual-gate self-aligned IGZO thin-film transistor (TFT) technology with channel length downsizing to 3µm, enabling 1.3mm...conference paper 2019
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Malinowski, P.E. (author), Ke, T.-H. (author), Akkerman, H. (author), Nakamura, A. (author), Shanmugam, S. (author), van Breemen, A. (author), Velpen, D.V. (author), Vandenplas, E. (author), Hagelsieb, L.M. (author), Verscheuren, L. (author), Genoe, J. (author), Dehaene, W. (author), Kronemeier, A.J. (author), Steudel, S. (author), Gelinck, G. (author), Heremans, P. (author)Patterning organic materials by photolithography enables not only high-resolution, side-by-side RGB OLED arrays, but also the introduction of organic photodetector in the same frontplane. We show patterned active matrix displays processed on flexible backplane. Furthermore, we demonstrate OPD patterning proof-of-concept. These are the building...conference paper 2019
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Akkermana, H.B. (author), Peeters, B. (author), van Breemena, A.J.J.M. (author), Shanmugama, S. (author), Tordera Salvador, D.A. (author), van der Steen, J.L.P.J. (author), Kronemeijer, A.J. (author), Malinowski, P. (author), De Roose, F. (author), Cheyns, D. (author), Genoeb, J. (author), Dehaene, W. (author), Heremans, P. (author), Gelincka, G. (author)Using flat-panel compatible processes we realized 6x8 cm, 200-ppi active-matrix imagers with solution-processed, ultrathin organic photodiodes and demonstrate its performance in a biometric palmprint detector.conference paper 2018
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Malinowski, P.E. (author), Ke, T.H. (author), Nakamura, A. (author), Liu, Y.H. (author), van der Velpen, D. (author), Vandenplas, E. (author), Papadopoulos, N. (author), Kronemeijer, A.J. (author), van der Steen, J.L. (author), Steudel, S. (author), Kuo, C.C. (author), Huang, Y.Y. (author), Chen, Y.H. (author), Yeh, M.H. (author), Gelinck, G. (author), Heremans, P. (author)High-resolution RGB organic light-emitting diode frontplane is a key enabler for direct-view transparent augmented reality displays. In this paper, we demonstrate 1250 ppi passive displays and semi-transparent active displays. Organic light-emitting diode photolithography can provide pixel density above 1000 ppi while keeping effective emission...article 2018
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Verschueren, L. (author), Ameys, M. (author), de Roose, F. (author), Steudel, S. (author), van der Steen, J.L.P.J. (author), Gelinck, G.H. (author), Kronemeijer, A.J. (author), Huang, C. (author), Tsai, C. (author), Huang, Y. (author), Yeh, M. (author), Heremans, P. (author), Myny, K. (author), Dehaene, W. (author), Genoe, J. (author)A novel external VT compensation method, using a simple driving scheme, is presented, enabling high resolution, yet uniform displays, regardless of the size. The uniformity can be maintained for initial VT nonuniformities as well as VT shifts occurring during operation, like bias stress. The characterized display area shows a significant...conference paper 2018
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Steudel, S. (author), van der Steen, J.L. (author), Nag, M. (author), Ke, T.H. (author), Smout, S. (author), Bel, T. (author), van Diesen, K. (author), de Haas, G. (author), Maas, J. (author), de Riet, J. (author), Rovers, M. (author), Verbeek, R. (author), Huang, Y.Y. (author), Chiang, S.C. (author), Ameys, M. (author), de Roose, F. (author), Dehaene, W. (author), Genoe, J. (author), Heremans, P. (author), Gelinck, G. (author), Kronemeijer, A.J. (author)We present a qHD (960x540 with 3 sub-pixels) top-emitting AMOLED display with 340ppi resolution using a self-aligned (SA) IGZO TFT backplane on polyimide-foil with humidity barrier. The back plane process flow is based on a 7 layer photolithography process with a CD=4um. We implement a 2T1C pixel engine and use commercial source driver IC made...conference paper 2017
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Malinowski, P.E. (author), Ke, T. (author), Nakamura, A. (author), Vicca, P. (author), Kronemeijer, A.J. (author), Ameys, M. (author), van der Steen, J.L. (author), Steudel, S. (author), Kamochi, Y. (author), Iwai, Y. (author), Gelinck, G. (author), Heremans, P. (author)This paper describes the potential of hi-res display fabrication using OLED photolithography. We demonstrate 1250 ppi multicolor arrays, pixel scaling down to 3 μm pitch, integration in active displays, and improving lifetime after patterning (200 hours T75, smOLEDs). Photolithography can enable low-cost, high resolution displays for the 8K – VR...conference paper 2017
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Heremans, P. (author), Papadopoulos, N. (author), de Jamblinne De Meux, A. (author), Nag, M. (author), Steudel, S. (author), Rockele, M. (author), Gelinck, G. (author), Tripathi, A. (author), Genoe, J. (author), Myny, K. (author)We discuss in this paper the present state and future perspectives of thin-film oxide transistors for flexible electronics. The application case that we focus on is a flexible health patch containing an analog sensor interface as well as digital electronics to transmit the acquired data wirelessly to a base station. We examine the electronic...conference paper 2016
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Heremans, P. (author), Tripathi, A.K. (author), de Jamblinne de Meux, A. (author), Smits, E.C.P. (author), Hou, B. (author), Pourtois, G. (author), Gelinck, G.H. (author)The increasing interest in fl exible electronics and fl exible displays raises questions regarding the inherent mechanical properties of the electronic materials used. Here, the mechanical behavior of thin-fi lm transistors used in activematrix displays is considered. The change of electrical performance of thinfilm semiconductor materials under...article 2016
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Bhoolokam, A. (author), Nag, M. (author), Steudel, S. (author), Genoe, J. (author), Gelinck, G. (author), Kadashchuk, A. (author), Groeseneken, G. (author), Heremans, P. (author)We validate a model which is a combination of multiple trapping and release and percolation model for describing the conduction mechanism in amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT). We show that using just multiple trapping and release or percolation model is insufficient to explain TFT behavior as a function of...article 2016
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Bhoolokam, A. (author), Nag, M. (author), Chasin, A. (author), Steudel, S. (author), Genoe, J. (author), Gelinck, G. (author), Groeseneken, G. (author), Heremans, P. (author)It is shown in this paper that the finite resistance of the accumulation channel in amorphous In–Ga–Zn–O thin-film transistors (a-IGZO TFTs) is the main cause of the frequency dispersion of the capacitance–voltage curves in these devices. A transmission line model, accounting for the distributed nature of channel resistance, is used to explain...article 2015
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Nag, M. (author), Steudel, S. (author), Smout, S. (author), Bhoolokam, A. (author), Genoe, J. (author), Cobb, B. (author), Kumar, A. (author), Groeseneken, G. (author), Heremans, P. (author)In this study, we have compared the performance of self-aligned a-IGZO thin-film transistors (TFTs) whereby the source/drain (S/D) region's conductivity enhanced in three different ways, that is, using SiNx interlayer plasma (hydrogen diffusion), using calcium (Ca as reducing metal) and using argon plasma (changing the atomic ratio). All these...article 2015
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Nag, M. (author), Bhoolokam, A. (author), Steudel, S. (author), Chasin, A. (author), Maas, J. (author), Genoe, J. (author), Murata, M. (author), Groeseneken, G. (author), Heremans, P. (author)In this work, we report on amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with medium frequency physical vapor deposited (mf-PVD) etch-stop-layer (ESL). TFT with mf-PVD ESL show comparable characteristics such as fieldeffect mobility (μFE), sub-threshold slope (SS−1) and current ratio (ION/OFF) to the conventional plasma...article 2015
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Myny, K. (author), Cobb, B. (author), van der Steen, J.L. (author), Tripathi, A.K. (author), Genoe, J. (author), Gelinck, G. (author), Heremans, P. (author)Our goal is to create thin low-cost flexible NFC tags to allow everyday objects to communicate to smartphones and computers and thus participate in the Internet of Things. We employ amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor circuits processed at low temperatures, less than 250C, directly on thin polyester substrates....conference paper 2015
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Nag, M. (author), Steudel, S. (author), Smout, S. (author), Bhoolokam, A. (author), Genoe, J. (author), Cobb, B. (author), Kumar, A. (author), Groeseneken, G. (author), Heremans, P. (author)In this work, we present the impact of S/D contact formation, that is, by SiN plasma doping (hydrogen incorporation), metallic reduction (by calcium) and by argon plasma (compositional change) on NBIS instabilities of self-aligned a-IGZO TFTs.article 2015
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Nag, M. (author), Bhoolokam, A. (author), Smout, S. (author), Willegems, M. (author), Muller, R. (author), Myny, K. (author), Schols, S. (author), Ameys, M. (author), Genoe, J. (author), Ke, T.H. (author), Vicca, P. (author), Ellis, T. (author), Cobb, B. (author), Kumar, A. (author), van der Steen, J.L.P.J. (author), Gelinck, G. (author), Fukui, Y. (author), Obata, K. (author), Groeseneken, G. (author), Heremans, P. (author), Steudel, S. (author)A process to make self-aligned top-gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) on polyimide foil is presented. The source/drain (S/D) region's parasitic resistance reduced during the SiN interlayer deposition step. The sheet resistivity of S/D region after exposure to SiN interlayer deposition decreased to 1.5...article 2015
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Malinowski, P.E. (author), Ke, T. (author), Nakamura, A. (author), Chang, T.-Y. (author), Gokhale, P. (author), Steudel, S. (author), Janssen, D. (author), Kamochi, Y. (author), Koyama, I. (author), Iwai, Y. (author), Heremans, P. (author)In this paper, side-by-side patterning of red, green and blue OLEDs is demonstrated. To achieve 640 ppi arrays with 20 µm subpixel pitch, chemically amplified, i-line photoresist system with submicron resolution was used. These results show feasibility of obtaining full-color displays with ultra-high resolution.article 2015