Spin-Mixing Enhanced Proximity Effect in Aluminum-Based Superconductor–Semiconductor Hybrids

In superconducting quantum circuits, aluminum is one of the most widely used materials. It is currently also the superconductor of choice for the development of topological qubits. However, aluminum-based devices suffer from poor magnetic field compatibility. Herein, this limitation is resolved by showing that adatoms of heavy elements (e.g.,...

Parametric exploration of zero-energy modes in three-terminal InSb-Al nanowire devices

We systematically study three-terminal InSb-Al nanowire devices by using radio-frequency reflectometry. Tunneling spectroscopy measurements on both ends of the hybrid nanowires are performed while systematically varying the chemical potential, magnetic field, and junction transparencies. Identifying the lowest-energy state allows for the...

Shadow-wall lithography of ballistic superconductor–semiconductor quantum devices

The realization of hybrid superconductor–semiconductor quantum devices, in particular a topological qubit, calls for advanced techniques to readily and reproducibly engineer induced superconductivity in semiconductor nanowires. Here, we introduce an on-chip fabrication paradigm based on shadow walls that offers substantial advances in device...

Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks

Selective-area growth is a promising technique for enabling of the fabrication of the scalable III-V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window resulting in selective growth remain undefined. Herein, we present a set of experimental techniques...