Searched for: author:"Gomes, H.L."
(1 - 3 of 3)
document
Andringa, A.-M. (author), Vlietstra, N. (author), Smits, E.C.P. (author), Spijkman, M.-J. (author), Gomes, H.L. (author), Klootwijk, J.H. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
Nitrogen dioxide (NO 2) detection with ZnO field-effect transistors is based on charge carrier trapping. Here we investigate the dynamics of charge trapping and recovery as a function of temperature by monitoring the threshold voltage shift. The threshold voltage shifts follow a stretched-exponential time dependence with thermally activated...
article 2012
document
Stallinga, P. (author), Benvenho, A.R.V. (author), Smits, E.C.P. (author), Mathijssen, S.G.J. (author), Colle, M. (author), Gomes, H.L. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)
The electron and hole mobility of nickel-bis(dithiolene) (NiDT) are determined in a metal– insulator–semiconductor (MIS) structure using admittance spectroscopy. The relaxation times found in the admittance spectra are attributed to the diffusion time of carriers to reach the insulator interface and via Einstein’s relation this yields the...
article 2008
document
de Brito, B.C. (author), Smits, E.C.P. (author), van Hal, P.A. (author), Geuns, T.C.T. (author), de Boer, B. (author), Lasance, C.J.M. (author), Gomes, H.L. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)
conference paper 2008