Searched for: author%3A%22Gholamrezaie%2C+F.%22
(1 - 7 of 7)
document
Ringk, A. (author), Li, X. (author), Gholamrezaie, F. (author), Smits, E.C.P. (author), Neuhold, A. (author), Moser, A. (author), van der Marel, C. (author), Gelinck, G.H. (author), Resel, R. (author), de Leeuw, D.M. (author), Strohriegl, P. (author)
This work describes n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a perylene derivative which is covalently fixed to an aluminum oxide dielectric via a phosphonic acid linker. N-type SAMFETs spontaneously formed by a single layer of active molecules are demonstrated for transistor channel length up to 100 μm. Highly...
article 2013
document
Asadi, K. (author), Katsouras, I. (author), Harkema, J. (author), Gholamrezaie, F. (author), Smits, E.C.P. (author), Biscarini, F. (author), Blom b, P.W.M. (author), de Leeuw, D.M. (author)
The contact resistance of a transistor using self-assembled monolayer (SAM)-modified source and drain electrodes depends on the SAM tunnel resistance, the height of the injection barrier and the morphology at the contact. To disentangle the different contributions, we have combined here the transmission line measurements in transistors with...
article 2012
document
Gholamrezaie, F. (author), Andringa, A.-M. (author), Roelofs, W.S.C. (author), Neuhold, A. (author), Kemerink, M. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
The threshold voltage is an important property of organic field-effect transistors. By applying a self-assembled monolayer (SAM) on the gate dielectric, the value can be tuned. After electrical characterization, the semiconductor is delaminated. The surface potentials of the revealed SAM perfectly agree with the threshold voltages, which...
article 2012
document
Ringk, A. (author), Li, X. (author), Gholamrezaie, F. (author), Smits, E.C.P. (author), Neuhold, A. (author), Moser, A. (author), Gelinck, G.H. (author), Resel, R. (author), de Leeuw, D.M. (author), Strohriegl, P. (author)
Within this work we present the synthesis and applications of a novel material designed for n-type self-assembled monolayer field-effect transistors (SAMFETs). Our novel perylene bisimide based molecule was obtained in six steps and is functionalized with a phosphonic acid linker which enables a covalent fixation on aluminum oxide dielectrics....
conference paper 2012
document
Gholamrezaie, F. (author), Asadi, K. (author), Kicken, R.A.H.J. (author), Langeveld-Voss, B.M.W. (author), de Leeuw, D.M. (author), Blom, P.W.M. (author)
We investigate the modulation of the charge injection in organic field-effect transistors with self-assembled monolayers (SAMs) using both a bottom-gate and a top-gate geometry. The current modulation by using SAMs is more pronounced in the top-gate geometry due to the better defined upper surface of the bottom source and drain electrodes. By...
article 2011
document
Gholamrezaie, F. (author), Mathijssen, S.G.J. (author), Smits, E.C.P. (author), Geuns, T.C.T. (author), van Hal, P.A. (author), Ponomarenko, S.A. (author), Flesch, H.-G. (author), Resel, R. (author), Cantatore, E. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)
We report on a two-dimensional highly ordered self-assembled monolayer (SAM) directly grown on a bare polymer surface. Semiconducting SAMs are utilized in field-effect transistors and combined into integrated circuits as 4-bit code generators. The driving force to form highly ordered SAMs is packing of the liquid crystalline molecules caused by...
article 2010
document
Asadi, K. (author), Gholamrezaie, F. (author), Smits, E.C.P. (author), Blom, W.M. (author), de Boer, B. (author), TNO Industrie en Techniek (author)
Charge carrier injection into two semiconducting polymers is investigated in field-effect transistors using gold source and drain electrodes that are modified by self-assembled monolayers of alkanethiols and perfluorinated alkanethiols. The presence of an interfacial dipole associated with the molecular monolayer at the metal/semiconductor...
article 2007
Searched for: author%3A%22Gholamrezaie%2C+F.%22
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