Searched for: author%3A%22Genoe%2C+J.%22
(1 - 20 of 64)

Pages

document
Verschueren, L. (author), Ameys M., (author), Velazquez Lopez M., (author), Roose F. de, (author), Bonnifait M., (author), Smout S., (author), Ke T.H., (author), Vandenplas E., (author), Kronemeijer A.J., (author), Steudel S., (author), Genoe J., (author), Dehaene W., (author), Myny K., (author)
Two different external compensation methods for high-resolution active matrix organic light-emitting diode (AMOLED) displays are presented and compared. Both compensation methods are implemented using a small pixel circuit, namely, a 3T2C and a 2T1C pixel circuit, allowing high-resolution displays. Due to the simple driving schemes, these...
article 2021
document
Verschueren, L. (author), Ameys, M. (author), Lopez, M.V. (author), Smout, S. (author), Ke, T.H. (author), Vandenplas, E. (author), Kronemeijer, A.J. (author), Heremans, P. (author), Genoe, J. (author), Dehaene, W. (author), Myny, K. (author)
This paper presents a new compensation principle using a 2T1C pixel circuit. The implementation shows significant improvement in uniformity for all grey-levels, due to compensation for both VT and β-factor variations. The resulting current variation after compensation in the characterized display area reaches values down to 0.079%.
conference paper 2020
document
de Roose, F. (author), Genoe, J. (author), Kronemeijer, A.J. (author), Myny, K. (author), Dehaene, W. (author)
Thin-film transistor (TFT) technologies have long been used predominantly for display fabrication and are attractive for large area, low cost and flexible circuit applications. Thanks to the improving performance of thin-film metal-oxide NFC tags and data processing chips on foil [1], [2], fabs are considering the large-scale production of...
conference paper 2019
document
Malinowski, P.E. (author), Ke, T.-H. (author), Akkerman, H. (author), Nakamura, A. (author), Shanmugam, S. (author), van Breemen, A. (author), Velpen, D.V. (author), Vandenplas, E. (author), Hagelsieb, L.M. (author), Verscheuren, L. (author), Genoe, J. (author), Dehaene, W. (author), Kronemeier, A.J. (author), Steudel, S. (author), Gelinck, G. (author), Heremans, P. (author)
Patterning organic materials by photolithography enables not only high-resolution, side-by-side RGB OLED arrays, but also the introduction of organic photodetector in the same frontplane. We show patterned active matrix displays processed on flexible backplane. Furthermore, we demonstrate OPD patterning proof-of-concept. These are the building...
conference paper 2019
document
Kronemeijer, A.J. (author), Akkerman, H. (author), van der Steen, J.L. (author), Steudel, S. (author), Pendyala, R. (author), Panditha, P. (author), Bel, T. (author), van Diesen, K. (author), de Haas, G. (author), Maas, J. (author), de Riet, J. (author), Rovers, M. (author), Verbeek, R. (author), Nag, M. (author), Verschueren, L. (author), Genoe, J. (author), Dehaene, W. (author), Lu, Y.J. (author), Chiang, S.C. (author), Huang, Y.Y. (author), Yeh, M.H. (author), Gelinck, G. (author)
conference paper 2018
document
Papadopoulos, N. (author), Steudel, S. (author), de Roose, F. (author), Eigabry, D.M. (author), Kronemeijer, A.J. (author), Genoe, J. (author), Dehaene, W. (author), Myny, K. (author)
In this paper a charge sense amplifier (CSA) using a 5μm In-Ga-Zn-O transistor technology on 15μm thick flexible substrate is presented for readout of a 500dpi fingerprint sensor array targeting direct integration with active matrix organic light emitting displays (AMOLED). The CSA achieves a linear input range of 0.8V for rail to rail output at...
conference paper 2018
document
Papadopoulos, N. (author), Steudel, S. (author), de Roose, F. (author), Eigabry, D.M. (author), Kronemeijer, A.J. (author), Genoe, J. (author), Dehaene, W. (author), Myny, K. (author)
In this paper a charge sense amplifier (CSA) using a 5μm In-Ga-Zn-O transistor technology on 15μm thick flexible substrate is presented for readout of a 500dpi fingerprint sensor array targeting direct integration with active matrix organic light emitting displays (AMOLED). The CSA achieves a linear input range of 0.8V for rail to rail output at...
conference paper 2018
document
Papadopoulos, N.P. (author), de Roose, F. (author), van der Steen, J.-L.P.J. (author), Smits, E.C.P. (author), Ameys, M. (author), Dehaene, W. (author), Genoe, J. (author), Myny, K. (author)
The maturity of metal–oxide thin-film transistors (TFT) highlights opportunities to develop robust and low-cost electronics on flexible and stretchable substrates over large area in an industry-compatible technology. Internet-ofEverything applications with sensor nodes are driving the development of analog-to-digital converters (ADCs). In this...
article 2018
document
Verschueren, L. (author), Ameys, M. (author), de Roose, F. (author), Steudel, S. (author), van der Steen, J.L.P.J. (author), Gelinck, G.H. (author), Kronemeijer, A.J. (author), Huang, C. (author), Tsai, C. (author), Huang, Y. (author), Yeh, M. (author), Heremans, P. (author), Myny, K. (author), Dehaene, W. (author), Genoe, J. (author)
A novel external VT compensation method, using a simple driving scheme, is presented, enabling high resolution, yet uniform displays, regardless of the size. The uniformity can be maintained for initial VT nonuniformities as well as VT shifts occurring during operation, like bias stress. The characterized display area shows a significant...
conference paper 2018
document
Steudel, S. (author), van der Steen, J.L. (author), Nag, M. (author), Ke, T.H. (author), Smout, S. (author), Bel, T. (author), van Diesen, K. (author), de Haas, G. (author), Maas, J. (author), de Riet, J. (author), Rovers, M. (author), Verbeek, R. (author), Huang, Y.Y. (author), Chiang, S.C. (author), Ameys, M. (author), de Roose, F. (author), Dehaene, W. (author), Genoe, J. (author), Heremans, P. (author), Gelinck, G. (author), Kronemeijer, A.J. (author)
We present a qHD (960x540 with 3 sub-pixels) top-emitting AMOLED display with 340ppi resolution using a self-aligned (SA) IGZO TFT backplane on polyimide-foil with humidity barrier. The back plane process flow is based on a 7 layer photolithography process with a CD=4um. We implement a 2T1C pixel engine and use commercial source driver IC made...
conference paper 2017
document
Heremans, P. (author), Papadopoulos, N. (author), de Jamblinne De Meux, A. (author), Nag, M. (author), Steudel, S. (author), Rockele, M. (author), Gelinck, G. (author), Tripathi, A. (author), Genoe, J. (author), Myny, K. (author)
We discuss in this paper the present state and future perspectives of thin-film oxide transistors for flexible electronics. The application case that we focus on is a flexible health patch containing an analog sensor interface as well as digital electronics to transmit the acquired data wirelessly to a base station. We examine the electronic...
conference paper 2016
document
Bhoolokam, A. (author), Nag, M. (author), Steudel, S. (author), Genoe, J. (author), Gelinck, G. (author), Kadashchuk, A. (author), Groeseneken, G. (author), Heremans, P. (author)
We validate a model which is a combination of multiple trapping and release and percolation model for describing the conduction mechanism in amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT). We show that using just multiple trapping and release or percolation model is insufficient to explain TFT behavior as a function of...
article 2016
document
Bhoolokam, A. (author), Nag, M. (author), Chasin, A. (author), Steudel, S. (author), Genoe, J. (author), Gelinck, G. (author), Groeseneken, G. (author), Heremans, P. (author)
It is shown in this paper that the finite resistance of the accumulation channel in amorphous In–Ga–Zn–O thin-film transistors (a-IGZO TFTs) is the main cause of the frequency dispersion of the capacitance–voltage curves in these devices. A transmission line model, accounting for the distributed nature of channel resistance, is used to explain...
article 2015
document
Nag, M. (author), Steudel, S. (author), Smout, S. (author), Bhoolokam, A. (author), Genoe, J. (author), Cobb, B. (author), Kumar, A. (author), Groeseneken, G. (author), Heremans, P. (author)
In this study, we have compared the performance of self-aligned a-IGZO thin-film transistors (TFTs) whereby the source/drain (S/D) region's conductivity enhanced in three different ways, that is, using SiNx interlayer plasma (hydrogen diffusion), using calcium (Ca as reducing metal) and using argon plasma (changing the atomic ratio). All these...
article 2015
document
Nag, M. (author), Bhoolokam, A. (author), Steudel, S. (author), Chasin, A. (author), Maas, J. (author), Genoe, J. (author), Murata, M. (author), Groeseneken, G. (author), Heremans, P. (author)
In this work, we report on amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with medium frequency physical vapor deposited (mf-PVD) etch-stop-layer (ESL). TFT with mf-PVD ESL show comparable characteristics such as fieldeffect mobility (μFE), sub-threshold slope (SS−1) and current ratio (ION/OFF) to the conventional plasma...
article 2015
document
Myny, K. (author), Cobb, B. (author), van der Steen, J.L. (author), Tripathi, A.K. (author), Genoe, J. (author), Gelinck, G. (author), Heremans, P. (author)
Our goal is to create thin low-cost flexible NFC tags to allow everyday objects to communicate to smartphones and computers and thus participate in the Internet of Things. We employ amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor circuits processed at low temperatures, less than 250C, directly on thin polyester substrates....
conference paper 2015
document
Nag, M. (author), Steudel, S. (author), Smout, S. (author), Bhoolokam, A. (author), Genoe, J. (author), Cobb, B. (author), Kumar, A. (author), Groeseneken, G. (author), Heremans, P. (author)
In this work, we present the impact of S/D contact formation, that is, by SiN plasma doping (hydrogen incorporation), metallic reduction (by calcium) and by argon plasma (compositional change) on NBIS instabilities of self-aligned a-IGZO TFTs.
article 2015
document
Nag, M. (author), Bhoolokam, A. (author), Smout, S. (author), Willegems, M. (author), Muller, R. (author), Myny, K. (author), Schols, S. (author), Ameys, M. (author), Genoe, J. (author), Ke, T.H. (author), Vicca, P. (author), Ellis, T. (author), Cobb, B. (author), Kumar, A. (author), van der Steen, J.L.P.J. (author), Gelinck, G. (author), Fukui, Y. (author), Obata, K. (author), Groeseneken, G. (author), Heremans, P. (author), Steudel, S. (author)
A process to make self-aligned top-gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) on polyimide foil is presented. The source/drain (S/D) region's parasitic resistance reduced during the SiN interlayer deposition step. The sheet resistivity of S/D region after exposure to SiN interlayer deposition decreased to 1.5...
article 2015
document
Steudel, S. (author), Cobb, B. (author), Nag, M. (author), Obata, K. (author), Murata, K.M. (author), Schols, S. (author), Vicca, P. (author), Ke, T.H. (author), Smout, S. (author), Willegems, M. (author), Ameys, M. (author), Bhoolakam, A. (author), Kumar, A. (author), Kumar, A. (author), van der Steen, J.L. (author), Genoe, J. (author), Gelinck, G.H. (author), Heremans, P.L. (author)
We present a QVGA (320x240 with 3 sub-pixel) top-emitting AMOLED display with 250ppi resolution using a self-aligned (SA) IGZO TFT backplane on polyimide-foil with full barrier. The back plane process flow is based on a 7 layer photolithography process. The aperture ratio of the top-emitting OLEDs is approx. 80%. An integrated gate driver is...
article 2015
document
Nag, M. (author), Muller, R. (author), Steudel, S. (author), Smout, S. (author), Bhoolokam, A. (author), Myny, K. (author), Schols, S. (author), Genoe, J. (author), Cobb, B. (author), Kumar, A. (author), Gelinck, G. (author), Fukui, Y. (author), Groeseneken, G. (author), Heremans, P. (author)
We demonstrated self-aligned amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) where the source–drain (S/D) regions were made conductive via chemical reduction of the a-IGZO via metallic calcium (Ca). Due to the higher chemical reactivity of Ca, the process can be operated at lower temperatures. The Ca process has the...
article 2015
Searched for: author%3A%22Genoe%2C+J.%22
(1 - 20 of 64)

Pages