EUV mask lifetime testing using EBL2

EBL2 is TNO's platform for EUV exposure testing and surface analysis. EBL2 is capable of generating conditions relevant to EUV mask operation at all foreseen source power nodes. The authors describe how TNO performs a customized (accelerated) lifetime test on EUV masks. The required gas, EUV, and thermal parameters will be considered, and...

First light on EBL2

TNO is building EBL2 as a publicly accessible test facility for EUV lithography related development of photomasks, pellicles, optics, and other components requiring EUV exposure. EBL2 consists of a EUV Beam Line, a XPS system, and sample handling infrastructure. Recently we finished installation of the source, exposure chamber, handlers and XPS...

First light and results on EBL2

Recently TNO has established EBL2; an exposure and analysis facility for testing EUV optics, reticles and pellicles under relevant EUV scanner and source conditions. The facility and EUV source complies with the ASML power roadmap of EUV systems up to a power of 500 W IF. This enables life time testing of EUV optics, reticles and pellicles under...

Characterization of EBL2 EUV exposure facility

TNO has built EBL2; a facility for EUV exposure testing and surface analysis. EBL2 is capable of testing EUV optics, EUV photomasks, pellicles, and other components under controlled conditions, relevant to EUV scanner and source operation at all foreseen source power nodes. The system consists of an EUV beam line coupled to an X-ray...

EBL2: High power EUV exposure facility

TNO is building EBL2: a laboratory EUV exposure system capable of operating at high broad band EUV powers and intensities, in which XPS analysis of exposed samples is possible without breaking vacuum. Its goal is to accelerate the development and testing of EUV optics and components by providing a publicly accessible exposure and analysis...

EBL2, a flexible, controlled EUV exposure and surface analysis facility

TNO is building EBL2 as a publicly accessible test facility for EUV lithography related development of photomasks, pellicles, optics, and other components. EBL2 will consist of a Beam Line, an XPS system, and sample handling infrastructure. EBL2 will accept a wide range of sample sizes, including EUV masks with or without pellicles. All types of...

Detection of fast flying nanoparticles by light scattering over a large volume

Detection of nanoparticles is of paramount importance for contamination control in ultra-clean systems. Light scattering is a well-known detection method which is applied in many different scientific and technology domains including atmospheric physics, environmental control, and biology. It allows contactless and remote detection of sub-micron...

Vacuum architecture of an EUV exposure system

EBL2: A flexible and controlled EUV exposure and surface analysis system

A new mask exposure and analysis facility

The introduction of ever higher source powers in EUV systems causes increased risks for contamination and degradation of EUV masks and pellicles. Appropriate testing can help to inventory and mitigate these risks. To this end, we propose EBL2: a laboratory EUV exposure system capable of operating at high EUV powers and intensities, and capable...

Spectrograph dedicated to measuring tropospheric trace gas constituents from space

Several organizations in the Netherlands are cooperating to develop user requirements and instrument concepts in the line of SCIAMACHY and OMI but with an increased focus on measuring tropospheric constituents from space. The concepts use passive spectroscopy in dedicated wavelength sections in the range of 300 to 2400 nm and wide angle, non...