Reducing charge noise in quantum dots by using thin silicon quantum wells

Charge noise in the host semiconductor degrades the performance of spinqubits and poses an obstacle to control large quantumprocessors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots to improve charge noise systematically. Here, we address the semiconductor-dielectric interface and the buried...

Reducing charge noise in quantum dots by using thin silicon quantum wells

Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots to improve charge noise systematically. Here, we address the semiconductor-dielectric interface and the...

Author correction: Reducing charge noise in quantum dots by using thin silicon quantum wells

Germanium wafers for strained quantum wells with low disorder

We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-rich SiGe strain-relaxed buffers with a threading dislocation density of (6 ± 1) × 10 5 cm − 2 , nearly an order of magnitude improvement compared to control strain...

Wafer-scale low-disorder 2DEG in 28Si/SiGe without an epitaxial Si cap

We grow 28Si/SiGe heterostructures by reduced-pressure chemical vapor deposition and terminate the stack without an epitaxial Si cap but with an amorphous Si-rich layer obtained by exposing the SiGe barrier to dichlorosilane at 500 °C. As a result, 28Si/SiGe heterostructure field-effect transistors feature a sharp semiconductor/dielectric...