Analysis of frequency dispersion in amorphous In–Ga–Zn–O thin-film transistors

It is shown in this paper that the finite resistance of the accumulation channel in amorphous In–Ga–Zn–O thin-film transistors (a-IGZO TFTs) is the main cause of the frequency dispersion of the capacitance–voltage curves in these devices. A transmission line model, accounting for the distributed nature of channel resistance, is used to explain...

Medium Frequency Physical Vapor Deposited Al2O3 and SiO2 as Etch-Stop-Layers for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors

In this work, we report on amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with medium frequency physical vapor deposited (mf-PVD) etch-stop-layer (ESL). TFT with mf-PVD ESL show comparable characteristics such as fieldeffect mobility (μFE), sub-threshold slope (SS−1) and current ratio (ION/OFF) to the conventional plasma...

Novel back-channel-etch process flow based a-IGZO TFTs for circuit and display applications on PEN foil

In this study, we report high-quality amorphous indiunrv-galiium-zinc-oxide (a-IGZO) thinfilm transistors (TFTs) fabricated on a polyethylene naphthalate foil using a new back-channel-etch (BCE) process flow. The BCE flow allows a better scalability of TFTs for high-resolution backplanes and related circuits. The maximum processing temperature...

High performance a-IGZO thin-film transistors with mf-PVD SiO2 as an etch-stop-layer

In this work, we report on high-performance bottom-gate top-contact (BGTC) amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with SiO2 as an etch-stop-layer (ESL) deposited by medium frequency physical vapor deposition (mf-PVD). The TFTs show field-effect mobility (μFE) of 16.0cm2/(V.s), sub-threshold slope (SS -1) of 0.23V...

Bidirectional communication in an HF hybrid organic/solution-processed metal-oxide RFID tag

A bidirectional communication protocol allows radio-frequency identification (RFID) tags to have readout of multiple tags in the RF field without collision of data. In this paper, we realized bidirectional communication between a reader system and thin-film RFID tag by introducing a novel protocol for the uplink communication. Amplitude...

Flexible NAND-Like Organic Ferroelectric Memory Array

We present a memory array of organic ferroelectric field-effect transistors (OFeFETs) on flexible substrates. The OFeFETs are connected serially, similar to the NAND architecture of flash memory, which offers the highest memory density of transistor memories. We demonstrate a reliable addressing scheme in this architecture, without the need for...

Scaling down of organic complementary logic gates for compact logic on foil

In this work, we realize complementary circuits with organic p-type and n-type transistor integrated on polyethylene naphthalate (PEN) foil. We employ evaporated p-type and n-type organic semiconductors spaced side by side in bottom-contact bottom-gate coplanar structures with channel lengths of 5 μm. The area density is 0.08 mm2 per...

Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode

The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier electrode and with a molybdenum (Mo) Ohmic...

Sîngle-source dual-iayer amorphous IGZO thîn-fîlm transistors for display and circuit applications

In this study, the authors report on high-quality amorphous indium-galliunv-zinc oxide thinfilm transistors (TFTs) based on a single-source dual-layer concept processed at temperatures down to ISCC. The dual-layer concept allows the precise control of local charge carrier densities by varying the 02/Ar gas ratio during sputtering for the bottom...

Bidirectional communication in an HF hybrid organic/solution-processed metal-oxide RFID tag

The ambition of printing item-level RFID tags is one of the driving forces behind printed electronics research. Organic RFID tags have been shown, initially using p-type organic semiconductors [1-4]. The introduction of n-type organic semiconductors with reasonable performance made organic CMOS conceivable [5] and organic CMOS RFID tags were...