Searched for: author%3A%22Cantatore%2C+E.%22
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document
Fattori, M. (author), Cardarelli, S. (author), Fijn, J. (author), Harpe, P. (author), Charbonneau, M. (author), Locatelli, D. (author), Lombard, S. (author), Laugier, C. (author), Tournon, L. (author), Jacob, S. (author), Romanjek, K. (author), Coppard, R. (author), Gold, H. (author), Adler, M. (author), Zirkl, M. (author), Groten, J. (author), Tschepp, A. (author), Lamprecht, B. (author), Postl, M. (author), Stadlober, B. (author), Socratous, J. (author), Cantatore, E. (author)
In this work is presented for the first time a large-area proximity sensing surface fabricated by printing organic materials and featuring distributed Analog Frontend Electronics (AFE) based on Organic Thin-Film Transistors (OTFTs). The sensor foil enables detecting the presence of approaching heat sources (like humans or moving machines) at a...
article 2022
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Zulqarnain, M. (author), Stanzione, S. (author), van der Steen, J.L.P.J. (author), Gelinck, G.H. (author), Abdinia, S. (author), Cantatore, E. (author)
With the advent of the Internet of things, wearable sensing devices are gaining importance in our daily lives for applications like vital signal monitoring during sport and health diagnostics. Amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) fabricated on flexible large-area substrates are a very interesting platform to...
article 2019
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Zulqarnain, M. (author), Stanzione, S. (author), van der Steen, J.L.P.J. (author), Gelinck, G.H. (author), Myny, K. (author), Cantatore, E. (author)
This work presents a low power ECG interface for wearable applications, based on unipolar a-IGZO TFTs manufactured on a flexible substrate. The interface consists of a cascaded diode-connected load preamplifier followed by a reset integrator, which is used to convert the voltage signal to a pulse-width modulated (PWM) representation. The output...
conference paper 2019
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Zulqarnain, M. (author), Stanzione, S. (author), van der Steen, J.L.P.J. (author), Gelinck, G.H. (author), Myny, K. (author), Abdinia, S. (author), Cantatore, E. (author)
This paper presents a 52 μW heart-rate measurement interface for wearable applications, fabricated on a flexible foil with a-IGZO TFTs. The interface consists of a cascaded diode-connected load preamplifier with a gain of 22 dB in 3 kHz bandwidth. The output is provided as a binary PWM waveform, which can be sent to a reader device using...
conference paper 2018
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Ghittorelli, M. (author), Torricelli, F. (author), Garripoli, C. (author), van der Steen, J.L.J.P. (author), Gelinck, G.H. (author), Abdinia, S. (author), Cantatore, E. (author), Kovacs-Vajna, Z.M. (author)
conference paper 2017
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Garripoli, C. (author), van der Steen, J.L.P.J. (author), Smits, E. (author), Gelinck, G.H. (author), van Roermund, A.H.M. (author), Cantatore, E. (author)
conference paper 2017
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Torricelli, F. (author), Ghittorelli, M. (author), Smits, E.C.P. (author), Roelofs, C.W.S. (author), Janssen, R.A.J. (author), Gelinck, G.H. (author), Kovács-Vajna, Z.M. (author), Cantatore, E. (author)
Ambipolar transistors typically suffer from large off-current inherently due to ambipolar conduction. Using a tri-gate transistor it is shown that it is possible to electrostatically switch ambipolar polymer transistors from ambipolar to unipolar mode. In unipolar mode, symmetric characteristics with an on/off current ratio of larger than 105...
article 2016
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Ghittorelli, M. (author), Torricelli, F. (author), van der Steen, J.L. (author), Garripoli, C. (author), Tripathi, A. (author), Gelinck, G.H. (author), Cantatore, E. (author), Kovacs-Vajna, Z.M. (author)
Here we show a new physical-based analytical model of a-IGZO TFTs. TFTs scaling from L=200 μm to L=15 μm and fabricated on plastic foil are accurately reproduced with a unique set of parameters. The model is used to design a zero-VGS inverter. It is a valuable tool for circuit design and technology characterization. cop. 2015 IEEE.
conference paper 2016
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Myny, K. (author), Marien, H. (author), Steudel, S. (author), Vicca, P. (author), Beenhakkers, M.J. (author), van Aerle, N.A.J.M. (author), Gelinck, G.H. (author), Genoe, J. (author), Dehaene, W. (author), Steyaert, M. (author), Heremans, P. (author), Cantatore, E. (author)
bookPart 2012
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Raiteri, D. (author), Torricelli, F. (author), Myny, K. (author), Nag, M. (author), van der Putten, B. (author), Smits, E. (author), Steudel, S. (author), Tempelaars, K. (author), Tripathi, A.K. (author), Gelinck, G.H. (author), van Roermund, A. (author), Cantatore, E. (author)
Amorphous Gallium-Indium-Zinc-Oxide (GIZO or IGZO) has been recently proposed [1] as an interesting semiconductor for manufacturing TFTs because of its mobility (μ∼20cm 2/Vs), superior to other common materials for large-area electronics like organic semiconductors and a-Si (μ∼1cm 2/Vs). The amorphous nature of GIZO grants also a good uniformity...
conference paper 2012
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Torricelli, F. (author), Meijboom, J.R. (author), Smits, E. (author), Tripathi, A.K. (author), Gelinck, G.H. (author), Colalongo, L. (author), Kovacs-Vajna, Z.M. (author), de Leeuw, D. (author), Cantatore, E. (author)
Abstract—Short-channel zinc oxide (ZnO) thin-film transistors (TFTs) are investigated in a wide range of temperatures and bias conditions. Scaling down the channel length, the TFT performance is seriously affected by contact resistances, which depend on gate voltage and temperature. To account for the contact resistances, the transistor is...
article 2011
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Torricelli, F. (author), Meijboom, J.R. (author), Smits, E. (author), Tripathi, A.K. (author), Ferroni, M. (author), Federici, S. (author), Gelinck, G.H. (author), Colalongo, L. (author), Kovacs-Vajna, Z.M. (author), de Leeuw, D. (author), Cantatore, E. (author)
Thin-film transistors (TFTs), which use zinc oxide (ZnO) as an active layer, were fabricated and investigated in detail. The transport properties of ZnO deposited by spray pyrolysis (SP) on a TFT structure are studied in a wide range of temperatures, electrical conditions (i.e., subthreshold, above-threshold linear, and saturation regions), and...
article 2011
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Belleville, M. (author), Fanet, H. (author), Fiorini, P. (author), Nicole, P. (author), Pelgrom, M.J.M. (author), Piguet, C. (author), Hahn, R. (author), van Hoof, C. (author), Vullers, R. (author), Tartagni, M. (author), Cantatore, E. (author)
Energy efficiency of electronic systems has emerged as one of the most important trends in integrated circuits research in recent years. The results of this continued effort are visible in all kinds of electronic functions: DSPs (reaching the 10 μW/MMAC according Gene's law), data converters (the FOM of recent ADCs is approaching 15 fJ...
article 2010
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Gholamrezaie, F. (author), Mathijssen, S.G.J. (author), Smits, E.C.P. (author), Geuns, T.C.T. (author), van Hal, P.A. (author), Ponomarenko, S.A. (author), Flesch, H.-G. (author), Resel, R. (author), Cantatore, E. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)
We report on a two-dimensional highly ordered self-assembled monolayer (SAM) directly grown on a bare polymer surface. Semiconducting SAMs are utilized in field-effect transistors and combined into integrated circuits as 4-bit code generators. The driving force to form highly ordered SAMs is packing of the liquid crystalline molecules caused by...
article 2010
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Smits, E.C.P. (author), Mathijssen, S.G.J. (author), van Hal, P.A. (author), Setayesh, S. (author), Geuns, T.C.T. (author), Mutsaers, K.A.H.A. (author), Cantatore, E. (author), Wondergem, H.J. (author), Werzer, O. (author), Resel, R. (author), Kemerink, M. (author), Kirchmeyer, S. (author), Muzafarov, A.M. (author), Ponomarenko, S.A. (author), de Boer, B. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), TNO Industrie en techniek (author)
Self-assembly—the autonomous organization of components into patterns and structures1—is a promising technology for the mass production of organic electronics. Making integrated circuits using a bottom-up approach involving self-assembling molecules was proposed2 in the 1970s. The basic building block of such an integrated circuit is the self...
article 2008
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Spijkman, M. (author), Smits, E.C.P. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), Bon Saint Côme, Y. (author), Setayesh, S. (author), Cantatore, E. (author), TNO Industrie en Techniek (author)
Complex digital circuits reliably work when the noise margin of the logic gates is sufficiently high. For p-type only inverters, the noise margin is typically about 1 V. To increase the noise margin, we fabricated inverters with dual gate transistors. The top gate is advantageously used to independently tune the threshold voltage.
article 2008
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Anthopoulos, T.D. (author), Setayesh, S. (author), Smits, E. (author), Cölle, M. (author), Cantatore, E. (author), de Boer, B. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
To date there are two demonstrated technologies for the fabrication of organic integrated circuits: the unipolar and the complementary technology. Unipolar architectures consist of p-channel organic field-effect transistors (OFETs), which are simple to fabricate since they require a single, high-workfunction metal (e.g., gold) and a single...
article 2005
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Huitema, H.E.A. (author), Gelinck, G.H. (author), van der Putten, J.B.P.H. (author), Kuijk, K.E. (author), Hart, C.M. (author), Cantatore, E. (author), Herwig, P.T. (author), van Breemen, A.J.J.M. (author), de Leeuw, D.M. (author)
The handling of grey levels by these large displays paves the way for electronic paper.
article 2001
Searched for: author%3A%22Cantatore%2C+E.%22
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